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Insight into influence of thermodynamic coefficients on transient negative capacitance in Zr-doped HfO2 ferroelectric capacitors 下载免费PDF全文
Yuan-Yuan Zhang 《中国物理 B》2021,30(12):127701-127701
We study the influence of the thermodynamic coefficients on transient negative capacitance for the Zr-doped HfO2 (HZO) ferroelectric capacitors by the theoretical simulation based on the Landau-Khalatnikov (L-K) theory and experimental measurement of electrical properties in the resistor-ferroelectric capacitor (R-FEC) circuit. Our results show that the thermodynamic coefficients α, β and γ also play a key role for the transient NC effect besides the viscosity coefficient and series resistor. Moreover, the smaller coefficients α and β, the more significant the transient NC effect. In addition, we also find that the thermodynamic process of transient NC does not obey the generally accepted viewpoint of Gibbs free energy minimization. 相似文献
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通过简单高效的醛酮缩合反应,合成了碱性配体2,6-二(4-吡啶基亚甲基)环己酮(BPCH),采用3种芳香羧酸配体:对苯二甲酸(H2TP)、间苯二甲酸(H2IP)和均苯三甲酸(H3TMA),以混合配体策略制备了7例金属有机骨架(MOFs)。用单晶X射线衍射、红外光谱、粉末X射线衍射和热重分析对其进行表征并分析其拓扑结构。MOFs1、2、3均呈现为多样的三维结构,MOFs4~7表现为同构的二维结构。荧光测试结果显示该类化合物对Fe3+有较好的荧光猝灭效应,同时对于染料具有一定的吸附能力。 相似文献
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Trigger efficiencies at BESⅢ were determined for both the J/ψ and ψ' data taking of 2009. Both dedicated runs and physics datasets are used; efficiencies are presented for Bhabha-scattering events, generic hadronic decay events involving charged tracks, dimuon events and ψ'→π+π-J/ψ, J/ψ→ 1+1- events.The efficiencies are found to lie well above 99% for all relevant physics cases, thus fulfilling the BESⅢ design specifications. 相似文献
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以铱配合物红色磷光体Ir(piq)2(acac)为掺杂剂,制备了基于BAlq材料的红色电致磷光器件,其结构为ITO/NPB(30nm)/Ir(piq)2(acac):BAlq(25nm)/BCP(13nm)/Alq3(35nm)/LiF(1nm)/Al(1000nm),当掺杂浓度为8%的时候,器件发光的色坐标为(x=0.67,y=0.32),基本满足了全色显示对红色发光的要求。在电压为16V时,器件达到最高亮度9380cd/m2。在电流密度为5.45mA/cm2时,外量子效率达到最大5.7%。由于磷光体Ir(piq)2(acac)的磷光寿命较短,所以器件在高电流密度下,仍然保持较高的外量子效率。电流密度为100mA/cm2时,外量子效率仍然维持在4.7%。进一步研究表明在器件中短程的Dexter能量传递以及红光染料对空穴的直接捕获两种机制同时存在。 相似文献
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Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process 下载免费PDF全文
In the process of high-k films fabrication, a novel multi deposition multi annealing(MDMA) technique is introduced to replace simple post deposition annealing. The leakage current decreases with the increase of the post deposition annealing(PDA) times. The equivalent oxide thickness(EOT) decreases when the annealing time(s) change from 1 to 2. Furthermore,the characteristics of SILC(stress-induced leakage current) for an ultra-thin SiO_2/HfO_2 gate dielectric stack are studied systematically. The increase of the PDA time(s) from 1 to 2 can decrease the defect and defect generation rate in the HK layer. However, increasing the PDA times to 4 and 7 may introduce too much oxygen, therefore the type of oxygen vacancy changes. 相似文献
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针对传统工业控制网络总线资源调度算法在节点数量逐渐增加时收敛速度慢和搜索精度不高,且准确度及效率低等问题, 提出了一种基于关键路径链和多态蚁群遗传算法(PACGA)的资源调度方法,采用关键路径链的调度算法获取需求调度的节点,不同节点间采用多态蚁群遗传算法进行资源的调度,依据照工业控制网络资源调度的特征,用自适应调整挥发系数增强节点的全局搜索性能,通过候选节点集方法缩小搜索区域提高算法的搜索效率,完成工业控制网络总线资源的高效调度。仿真实验说明,该种方法在工业控制过程中任务数量较多的情况下仍然具备较高的运行效率和精度,并且具有较低的运行时间,具有较强的应用价值。 相似文献
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Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations 下载免费PDF全文
The thickness effect of the TiN capping layer on the time dependent dielectric breakdown(TDDB) characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper.Based on experimental results,it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer.From the charge pumping measurement and secondary ion mass spectroscopy(SIMS) analysis,it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density.In addition,the influences of interface and bulk trap density ratio N_(it)/N_(ot) are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo(kMC) method.The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses. 相似文献