基于扫描探针显微镜(SPM)的高密度信息存储

随着信息技术的飞速发展,高密度信息存储的研究成为国际上备受关注的研究领域。扫描探针显微技术（SPM）通过改变材料的光、电、磁等局域特性可以实现纳米尺度的信息存储,成为提高信息存储密度的最有效手段之一。本文从信息存储材料和技术角度综述了基于SPM的高密度信息存储最近的研究进展,并讨论了其将来的研究和发展方向。     

Atomic force microscopy investigation of growth process of organic TCNQ aggregates on SiO2 and mica substrates

<正>Deposition patterns of tetracyanoquinodimethane(TCNQ) molecules on different surfaces are investigated by atomic force microscopy.A homemade physical vapour deposition system allows the better control of molecule deposition. Taking advantage of this system,we investigate TCNQ thin film growth on both SiO_2 and mica surfaces.It is found that dense island patterns form at a high deposition rate,and a unique seahorse-like pattern forms at a low deposition rate.Growth patterns on different substrates suggest that the fractal pattern formation is dominated by molecule-molecule interaction.Finally,a phenomenal "two-branch" model is proposed to simulate the growth process of the seahorse pattern.     

Laser-induced phase conversion of n-type SnSe2 to p-type SnSe

We report a facile phase conversion method that can locally convert n-type SnSe₂ into p-type SnSe by direct laser irradiation. Raman spectra of SnSe₂ flakes before and after laser irradiation confirm the phase conversion of SnSe₂ to SnSe. By performing the laser irradiation on SnSe₂ flakes at different temperatures, it is found that laser heating effect induces the removal of Se atoms from SnSe₂ and results in the phase conversion of SnSe₂ to SnSe. Lattice-revolved transmission electron microscope images of SnSe₂ flakes before and after laser irradiation further confirm such conversion. By selective laser irradiation on SnSe₂ flakes, a pattern with SnSe₂/SnSe heteostructures is created. This indicates that the laser induced phase conversion technique has relatively high spatial resolution and enables the creation of micron-sized in-plane p-n junction at predefined region.     

Dirac states from p_(x,y) orbitals in the buckled honeycomb structures:A tight-binding model and first-principles combined study

Dirac states composed of p_(x,y) orbitals have been reported in many two-dimensional(2 D) systems with honeycomb lattices recently. Their potential importance has aroused strong interest in a comprehensive understanding of such states.Here, we construct a four-band tight-binding model for the p_(x,y)-orbital Dirac states considering both the nearest neighbor hopping interactions and the lattice-buckling effect. We find that p_(x,y)-orbital Dirac states are accompanied with two additional narrow bands that are flat in the limit of vanishing π bonding, which is in agreement with previous studies. Most importantly, we analytically obtain the linear dispersion relationship between energy and momentum vector near the Dirac cone. We find that the Fermi velocity is determined not only by the hopping through π bonding but also by the hopping through σ bonding of p_(x,y) orbitals, which is in contrast to the case of p_z-orbital Dirac states. Consequently, p_(x,y)-orbital Dirac states offer more flexible engineering, with the Fermi velocity being more sensitive to the changes of lattice constants and buckling angles, if strain is exerted. We further validate our tight-binding scheme by direct first-principles calculations of model-materials including hydrogenated monolayer Bi and Sb honeycomb lattices. Our work provides a more in-depth understanding of p_(x,y)-orbital Dirac states in honeycomb lattices, which is useful for the applications of this family of materials in nanoelectronics.     

通过不同烷基链取代调控喹吖啶酮分子在Ag(110)表面上的自组织结构

采用低能电子衍射、扫描隧道显微镜、第一性原理密度泛函理论计算以及分子力学计算,分别对不同烷基链取代的喹吖啶酮(QA)分子在Ag(110)基底上的吸附和生长进行了研究.QA和Ag基底的相互作用主要来自分子中O原子和Ag基底的共价键,它决定了分子的取向和最优吸附位置;而烷基链决定了分子吸附层的取向,QA分子间的排列可以通过烷基链的长度来调节.由此借助调节烷基链的长度,能够可控地制备具有不同物理性质的单层分子薄膜.     

Intrinsic charge transport behaviors in graphene-black phosphorus van der Waals heterojunction devices

Heterostructures from mechanically-assembled stacks of two-dimensional materials allow for versatile electronic device applications. Here, we demonstrate the intrinsic charge transport behaviors in graphene-black phosphorus heterojunction devices under different charge carrier densities and temperature regimes. At high carrier densities or in the ON state,tunneling through the Schottky barrier at the interface between graphene and black phosphorus dominates at low temperatures. With temperature increasing, the Schottky barrier at the interface is vanishing, and the channel current starts to decrease with increasing temperature, behaving like a metal. While at low carrier densities or in the OFF state, thermal emission over the Schottky barrier at the interface dominates the carriers transport process. A barrier height of ~67.3 meV can be extracted from the thermal emission-diffusion theory.     

钒基笼目晶格超导体中非常规配对密度波的发现

作为费米子的电子无法满足玻色—爱因斯坦凝聚,但两个电子通过配对形成的库珀对(Cooper pair)则可以表现出玻色子的行为,进而诱导出超导电性.经典的 Bardeen-Cooper-Schrieffer(BCS)理论认为超导电性是一种宏观的量子相干态,库珀对在形成的同时会发生U(1)对称性破缺,从而使所有的库珀对获得...     

Graphene的物理性质与器件应用

Graphene因其新奇的物理性质和广泛的应用前景已迅速成为国际新材料领域的研究前沿和热点.文章详细介绍了Graphene奇特的物理性质（多体相互作用、量子霍尔效应、双极场效应、弱局域化效应等）,并对其在微纳米器件、分子电子学、自旋电子学等领域的应用进展给出了综述.     

单元素二维原子晶体材料研究进展

非碳元素构成的二维单质原子晶体材料,具有与石墨烯相似的单层结构和物理性质,对它们的研究有望发掘一些崭新的性能及相关的应用,是当前凝聚态物理及新材料等相关领域的重要研究方向之一。文章详细介绍了近几年发展起来的单一元素所形成的二维原子晶体材料,分别对其结构、物性、应用前景等方面的研究进展进行了综述介绍。     

功能纳米结构可控生长的新途径：非模板选择性自组装

文章介绍了一种非模板选择性自组装纳米结构的方法.从实验和理论上研究了两种有机分子在Ag单晶不同表面上的吸附行为,发现在Ag（775）基底上PTCDA分子会完全吸附在（111）台阶面上,而DMe-DCNQI分子则完全吸附在（221）台阶面上.该研究还阐明了PTCDA分子与基底原子之间的相互作用机制,提出了PTCDA与基底之间的相互作用是通过分子末端官能团的氧原子实现的,中心的π共轭区域与基底相排斥,理论模拟得到的氧原子的NIXSW相干长度以及碳原子的近边X射线吸收谱与实验结果符合得较好.