高温扩散工艺制备带隙可调的β-(AlxGa1-x)2O3薄膜

β-(Al_xGa_1-x)₂O₃因其优异的抗击穿及带隙可调节性在现代功率器件及深紫外光电探测等领域展现出巨大的应用前景，然而传统直接生长工艺的复杂性和难度限制了其进一步的发展。因此，本文采用较为简单的高温扩散工艺在c面蓝宝石衬底上成功制备了β-(Al_xGa_1-x)₂O₃纳米薄膜。利用X射线衍射、原子力显微镜、扫描电子显微镜和紫外-可见分光光度计对其进行了表征。由于高温下蓝宝石衬底中的Al原子向Ga₂O₃层扩散，β-Ga₂O₃薄膜将转变为Al、Ga原子比例不同的β-(Al_xGa_1-x)₂O₃薄膜。实验结果显示：当退火温度从1 010℃增加到1 250℃时，薄膜中Al的平均含量从0.033增加到0.371;当退火温度从950℃增加到1 250℃时...     

Ba3Bi2(PO4)4∶Tb3+荧光粉的制备与性能研究

利用高温固相反应法制备出Ba₃Bi_2-x(PO₄)₄∶xTb³⁺(x=0.05,0.1,0.15,0.3,0.4,0.5)绿色荧光粉。通过X射线衍射仪、扫描电子显微镜、积分球式分光光度计和荧光光谱仪等对样品进行了分析。结果表明,所制备的样品均为Ba₃Bi₂(PO₄)₄纯相,Ba₃Bi_1.7(PO₄)₄∶0.3Tb³⁺的带隙估计值为4.21 eV。当激发光的波长为377 nm时,样品的发射光谱的波峰位于543 nm、584 nm和619 nm处,分别对应于Tb³⁺的⁵D₄→⁷F₅、⁵D₄→⁷F₄和⁵D₄→⁷F₃的能级跃迁。随着Tb³⁺掺杂浓度的增加,样品的发光强度先增强后减弱,当x=0.3时,发光强度最大。计算表明最近邻离子在Ba₃Bi_2-x(PO₄)₄∶xTb³⁺荧光粉的浓度猝灭中起主要作用。随着测试温度的升高,发光强度变化不大,表明样品具有优异的热稳定性能。CIE色坐标图表明所制备的样品可以被紫外光有效激发而发出绿光。     

Microstructure,optical,and photoluminescence properties ofβ-Ga2O3films prepared by pulsed laser deposition under different oxygen partial pressures

Theβ-Ga₂O₃films are prepared on polished Al₂O₃(0001)substrates by pulsed laser deposition at different oxygen partial pressures.The influence of oxygen partial pressure on crystal structure,surface morphology,thickness,optical properties,and photoluminescence properties are studied by x-ray diffraction(XRD),atomic force microscope(AFM),scanning electron microscope(SEM),spectrophotometer,and spectrofluorometer.The results of x-ray diffraction and atomic force microscope indicate that with the decrease of oxygen pressure,the full width at half maximum(FWHM)and grain size increase.With the increase of oxygen pressure,the thickness of the films first increases and then decreases.The room-temperature UV-visible(UV-Vis)absorption spectra show that the bandgap of theβ-Ga₂O₃film increases from4.76 e V to 4.91 e V as oxygen pressure decreasing.Room temperature photoluminescence spectra reveal that the emission band can be divided into four Gaussian bands centered at about 310 nm(~4.0 e V),360 nm(~3.44 e V),445 nm(~2.79 e V),and 467 nm(~2.66 e V),respectively.In addition,the total photoluminescence intensity decreases with oxygen pressure increasing,and it is found that the two UV bands are related to self-trapped holes(STHs)at O1 sites and between two O2-s sites,respectively,and the two blue bands originate from V_Ga^2-at Ga1 tetrahedral sites.The photoluminescence mechanism of the films is also discussed.These results will lay a foundation for investigating the Ga₂O₃film-based electronic devices.     

Sr3ZnNb2O9:0.3Eu3+,xNa+荧光粉的合成和发光性能研究

本文通过高温固相反应成功制备了Sr₃ZnNb₂O₉∶0.3Eu³⁺,xNa⁺(x=0,0.1,0.2,0.3,0.4,0.5)系列荧光粉。X射线衍射分析和精修结果表明，Eu³⁺和Na⁺成功掺杂到Sr₃ZnNb₂O₉基质中，并部分取代了Zn²⁺。采用扫描电子显微镜测试了样品的微观形貌和元素分布。光谱特性和热稳定性研究表明，Na⁺的最佳掺杂浓度为x=0.2,Na⁺的引入提高了Sr₃ZnNb₂O₉∶0.3Eu³⁺荧光粉的热稳定性，活化能为0.163 eV。计算出Sr₃ZnNb₂O₉∶0.3Eu³⁺, 0.2Na⁺样品...