Numerical investigations on the current conduction in bilayer organic light—emitting devices with ohmic injection of charge carriers

A numerical model for bilayer organic light-emitting diodes (OLEDs) has been developed on the basis of trappedcharge limited conduction. The dependences of the current density on the operation voltage, the thickness andtrap properties of the hole transport layer (HTL) and emission layer (EML) in bilayer OLEDs of the structure an-ode/HTL/EML/cathode have been numerically investigated. It has been found that, for given values of reduced trapdepth, total trap density, and carrier mobility of HTL and EML, there exists an optimum thickness ratio of HTL tothe sum of HTL and EML, by which a maximal current density, and hence maximal quantum efficiency and luminance,can be achieved. The current density decreases quickly with the mean trap density, and decreases nearly exponentiallywith the mean reduced trap depth.     

高分子复合磁性材料的磁化装置

高分子复合型永磁材料,是用永磁铁氧体粉末或稀土水磁合金粉末与热塑性树脂混炼成型的新型材料.由于这种材料具有接近于填料永磁体的磁性和较好的塑性,可以加工成各种形状复杂、尺寸精确的永磁产品而受到了材料工业的重视.产品外形和用途的多样性,给磁化技术提出了新的要求.如要求磁化后的板材仅一个表面(附贴面)具有强磁性,另一表面     

用于稀土永磁测量的强脉冲磁场装置

本文介绍了一种高性能强脉冲磁场装置的研究结果.提出了一种提高脉冲幅度和脉冲宽度的简单而有效的方法.     

In掺杂ZnO薄膜的制备及其特性研究

采用射频反应溅射技术在硅(100)衬底上制备了未掺杂和掺In的ZnO薄膜。掠角X射线衍射测试表明,实验中制备的掺In样品为ZnO薄膜。用X射线衍射仪、原子力显微镜和荧光分光光度计分别对两样品的结构、表面形貌和光致发光特性进行了表征,分析了In掺杂对ZnO薄膜的结构和发光特性的影响。与未掺杂ZnO薄膜相比,掺In ZnO薄膜具有高度的C轴择优取向,同时样品的晶格失配较小,与标准ZnO粉末样品之间的晶格失配仅为0．16％;掺In ZnO薄膜表面平滑,表面最大不平整度为7nm。在掺In样品的光致发光谱中观察到了波长位于415nm和433nm处强的蓝紫光双峰,对掺In样品的蓝紫双峰的发光机理进行了讨论,并推测出该蓝紫双峰来源于In替位杂质和Zn填隙杂质缺陷。     

Numerical investigations on the current conduction in bilayer organic light-emitting devices with ohmic injection of charge carriers

A numerical model for bilayer organic light-emitting diodes (OLEDs) has been developed on the basis of trapped charge limited conduction. The dependences of the current density on the operation voltage, the thickness and trap properties of the hole transport layer (HTL) and emission layer (EML) in bilayer OLEDs of the structure anode/HTL/EML/cathode have been numerically investigated. It has been found that, for given values of reduced trap depth, total trap density, and cv~rrier mobility of HTL and EML, there exists an optimum thickness ratio of HTL to the sum of HTL and EML, by which a maximal current density, and hence maximal quantum efficiency and luminance,can be achieved. The current density decreases quickly with the mean trap density, and decreases nearly exponentially with the mean reduced trap depth.     

基于小波变换的局部化数字水印算法

为了解决许多水印算法不能抵抗任意剪裁的缺点，提出了局部化数字水印算法．通过二维Mexican Hat小波变换提取图像中的多个特征点，在以特征点为中心的局部化区域中分别进行小波变换，并通过对小波系数进行单系数量化来实现水印信息的嵌入，同时水印的提取不需要原始图像的参与．实验结果表明，在剪裁后待检测图像中至少包含一个嵌入水印区域的前提下，该算法对JPEG、JPEG2000压缩和任意剪裁具有很强的抵抗能力．