基于标准CMOS工艺的非接触式保护环单光子雪崩二极管

基于深亚微米CMOS工艺,设计了一种采用非接触式P阱保护环来抑制边缘击穿的单光子雪崩二极管结构.采用器件仿真软件Silvaco Atlas分析了保护环间距对器件的电场分布和雪崩触发概率等特性的影响,结合物理模型计算了所设计器件的暗计数概率和光子探测效率.仿真和计算结果表明,保护环间距d=0.6μm时器件性能最优,此时击穿电压为13.5V,暗电流为10-11 A.在过偏压为2.5V时,门控模式下的暗计数概率仅为0.38%,器件在400~700nm之间具有良好的光学响应,500nm时的峰值探测效率可达39%.     

串联催化体系制备长链支化聚乙烯

利用两种串联催化体系,Cat.I/Cat.II和Cat.I/Cat.III{Cat.I:[ArNCH-C8H3(CH2)2(C6H5)O]2 ZrBn2;Cat.II:(η5-C5Me4)Si(Me)2NtBuTiCl2;Cat.III:tans-Et(Ind)2ZrCl2)},催化了乙烯聚合,一步法制备出了长链支化聚...     

W-boson mass anomaly from a general SU(2)L scalar multiplet

We explain the W-boson mass anomaly by introducing an SU(2)_L scalar multiplet with general isospin and hypercharge {in the case without its vacuum expectation value}.It is shown that the dominant contribution from the scalar multiplet to the W-boson mass arises at the one-loop level,which can be expressed in terms of the electroweak (EW) oblique parameters T and S at leading order.We first rederive the general formulae of T and S induced by a scalar multiplet of EW charges,confirming ...