Charge—Orbital Ordering in Ferromagentic and Charge—Exchange—Type Antiferromagentic Phases for Half—Doped Manganites

Using a two-orbital DE model including the Coulomb interaction,we show that the charge-orbital ordering usually found in the charge-exchange phase may exist in the ferromagnetic phase for half-doped manganits,Thus,two types of phase transitions observed experimentally can be explained by the obtained phase diagram.     

分散固相萃取/高效液相色谱-串联质谱法检测大葱中虫酰肼、涕灭威及其衍生物的农药残留

采用分散固相萃取法净化(DSPE),高效液相色谱-串联质谱法(HPLC-MS/MS)在分时段多反应监测模式下对大葱中的虫酰肼、涕灭威及其衍生物进行测定,外标法定量,并对比了乙酸乙酯和乙腈作为提取剂的提取效果.结果表明,采用乙腈为提取剂时,4种农药在10～120μg/L范围内线性关系良好,且方法的定量下限(LOQ)均低于...     

石墨烯纳米结构的制备及带隙调控研究

石墨烯在未来微电子学领域有极大的应用前景,但是其零带隙的特点阻碍了石墨烯在半导体领域的应用.研究发现,打开室温下可用的石墨烯带隙所需要的石墨烯纳米结构尺度在10 nm以下,这一尺度的纳米结构一方面制备比较困难,另一方面器件可承载的驱动电流较小.因此,如何实现亚10 nm石墨烯纳米结构的有效加工以及如何在有效调控带隙的基础上增大石墨烯器件可承载的驱动电流,还需要进一步的研究.本文首先研究了利用聚甲基丙烯酸甲酯/铬(PMMA/Cr)双层结构工艺,通过刻蚀时间的控制,利用电子束曝光及刻蚀工艺实现了亚10 nm石墨烯纳米结构的可控制备.同时设计并制备了单排孔石墨烯条带结构,该结构打开的带隙远大于相同特征宽度石墨烯纳米带所能打开带隙的大小.该结构在有效打开石墨烯带隙的同时,增加了石墨烯纳米结构可以承载的驱动电流,有利于石墨烯在未来微电子领域的应用.     

多壁碳纳米管中的多通道弹道输运特性

借助于扫描电子显微镜中可移动金属探针的测量系统,实现了探针电极与W衬底上生长的单根多壁碳纳米管一端的完美接触.研究了单根多壁碳纳米管室温下的电输运特性,发现多壁碳纳米管具有非常高的电流承载能力.对于直径100nm的碳纳米管,其电阻为34.4Ω,流经碳纳米管的最大电流可达7.27 mA,对应的电导为 460-490G0 .这一实验结果表明,大直径的多壁碳纳米管在室温下可以实现多通道弹道输运,是未来纳电子器件与电路的理想互联导线.     

Modulating magnetism of nitrogen-doped zigzag graphene nanoribbons

We present a study of electronic properties of zigzag graphene nanoribbons （ZGNRs） substitutionally doped with nitrogen atoms at a single edge by first principle calculations. We find that the two edge states near the Fermi level sepa- rate due to the asymmetric nitrogen-doping. The ground states of these systems become ferromagnetic because the local magnetic moments along the undoped edges remain and those along the doped edges are suppressed. By controlling the charge-doping level, the magnetic moments of the whole ribbons are modulated. Proper charge doping leads to interest- ing half-metallic and single-edge conducting ribbons which would be helpful for designing graphene-nanoribbon-based spintronic devices in the future.