Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy

Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state （higher resistance state） to the crystalline state （lower resistance state）. The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low （only several μA）. An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad（Si）, which makes it attractive for space-based applications.     

Controllable synthesis,characterization,and growth mechanism of hollow Zn_x Cd_(1-x) S spheres generated by a one-step thermal evaporation method

Novel hollow ZnxCdl xS spheres that are uniform in size are synthesized through the one-step thermal evaporation of a mixture of Zn and CdS powder. From an X-ray diffraction （XRD） study, the hexagonal wurtzite phase of ZnxCdl_xS is verified, and the Zn mole fraction （x） is determined to be 0.09. According to the experimental results, we propose a mechanism for the growth of Zn0.09Cd0.91S hollow spheres. The results of the cathodoluminescence investigation indicate uniform Zn, Cd, and S distribution of alloyed Zn0.09Cd0.91S, instead of separate CdS, ZnS, or nanocrystals of a core- shell structure. To the best of our knowledge, the fabrication of ZnxCd1-xS hollow spheres of this kind by one-step thermal evaporation has never been reported. This work would present a new method of growing and applying hollow spheres on Si substrates, and the discovery of the Zn0.09Cd0.91S hollow spheres would make the investigation of ZnxCd1-xS micro/nanostructures more interesting and intriguing.     

Characteristics of Sn-Doped Ge2Sb2Te5 Films Used for Phase-Change Memory

Sn-doped Ge2Sb2Te5 thin films deposited on Si（100）/SiO2 substrates by rf magnetron sputtering are investigated by a differential scanning calorimeter, x-ray diffraction and sheet resistance measurement. The crystallization temperatures of the 3.58 at.%, 6.92 at.% and 10.04 at.% Sn-doped Ge2Sb2Te5 thin films have decreases of 5.3, 6.1 and 0.9℃, respectively, which is beneficial to reduce the switching current for the amorphous-to-crystalline phase transition. Due to Sn-doping, the sheet resistance of crystalline Ge2Sb2Te5 thin films increases about 2-10 times, which may be useful to reduce the switching current for the amorphous-to-crystalline phase change. In addition, an obvious decreasing dispersibility for the sheet resistance of Sn-doped Ge2Sb2Te5 thin films in the crystalline state has been observed, which can play an important role in minimizing resistance difference for the phase-change memory cell element arrays.     

Single Cell Element of Chalcogenide Randoul Access Memory Fabricated with the Focused Ion Beam Method

A singie cell element of chalcogenide random access memory was fabricated by using the focused ion beam method.The contact size between the Ge2Sb2Te5 Phase change film and the top electrode film is about 600nm (diameter) and the contact area is caiculated to be 0.28μm^2.The thickness of the phase change film is 83nm.The current-voltage characteristics of the cell element are studied using the home-made current-voltage tester in our laboratory.The minimum threshold current of about 0.6mA is obtained.     

硼玻璃中Sm3+离子的衰减及交叉弛豫

本文从Sm3+的衰减特性及能级跃迁性质两个方面研究Sm3+离子间的相互作用.一方面研究不同浓度Sm3+的衰减性质,利用Hirayama的理论确立相互作用的性质,另一方面研究相关能级的跃迁性质,从而证实由衰减所得结论的合理性.     

硼玻璃中Dy3+及Sm3+的辐射跃迁几率和无辐射跃迁几率

硼玻璃中掺杂Nd3+,Er3+,Tm3+等小能隙的稀土离子,由于硼玻璃声子能量大,多声子无辐射几率大,影响其发光效率。但由于硼玻璃熔点低,加工容易,对于民用上常用的Sm3+,Dy3+,Eu3+,Tb3+等大能隙物质,多声子无辐射跃迁不是主要因素的情况下,发光效率将如何是本文要研究的问题。另外,辐射跃迁性质的研究对于能量传递机理的研究也是很有意义的。     

Simulation of Phase-Change Random Access Memory with Ring-Type Contactor for Low Reset Current by Finite Element Modelling

A three-dimensional finite element models for phase change random access memory （PCRAM） is established to simulate thermal and electrical behaviours during RESET operation. The RESET behaviours of the conventional structure （CS） and the ring-type contact in bottom electrode （RIB） are compared with each other. The simulation results indicate that the RIB cell has advantages of high heat efficiency for melting phase change material in cell, reduction of contact area and lower RESET current with maintaining good resistance contrast. The RESET current decreases from 1.26mA to 1.2mA and the heat consumption in CST material during programming increases from 12% to 37% in RIB structure. Thus the RIB structure PCRAM cell is suitable for future device with high heat efficiency and smaller RESET current.     

氮肥管理对夏玉米土壤CH4和N2O排放的影响

通过设置四个不同的氮肥管理措施, 即氮肥施用量300 kg N/ha (N300)和250 kg N/ha (N250)、改进的施肥模式(Optimized)以及施用缓释肥(SRU), 研究华北平原夏玉米生长季土壤与大气之间CH₄和N₂O的交换通量及相应措施的减排潜力. 结果表明, 在2008年整个夏玉米生长季, 土壤都是大气CH₄的净吸收库和N₂O的排放源. 夏玉米生长季土壤氧化吸收的CH₄总量从大到小依次为Optimized > N250 > SRU > N300, 对应的吸收总量依次为624.16、590.07、487.89以及316.02 g CH₄-C/ha, 各处理间氧化吸收的CH₄总量无显著差异. 与N300和N250这两个处理相比, 依据夏玉米对氮肥的需肥规律以及玉米根层土壤速效氮的供给能力而确定氮肥施用量, 同时再平衡施用磷肥和钾肥的改进施肥模式能够显著降低夏玉米生长季N₂O的排放. 施用聚乙烯包膜的尿素也能够显著降低夏玉米季N₂O的排放. 夏玉米生长季土壤排放的N₂O总量从大到小依次为N300 > N250 > Optimized > SRU, 对应的排放总量依次为3462.18、2340.07、1680.00以及911.91 g N2O-N/ha, 相应的N₂O排放系数分别为1.15%、0.94%、0.91%以及0.30%.     

CO2／CH4重整镍基催化剂制备与性能的关系

一般浸渍法与真空浸渍法的比较说明,真空浸渍制备的催化剂,其表面具有较多的Ｎｉ原子,催化活性较高,现场ＴＰＯ实验表明,ＣＯ岐化的积炭量大于ＣＨ４解离的积炭量。从而提出镍基催化剂的积炭主要来自反应生成气ＣＯ的岐化。     

近红外光谱法分析土壤中的有机质和氮素

应用近红外光谱技术测定土壤中的全氮、有机质、碱解氮，分别测定了2mm、0.15mm粒度的风干土在4000cm^-1～12000cm^-1波数范围的近红外光谱，用偏最小二乘法建立数学模型来进行含量预测，结果表明近红外光谱与土壤有机质、全氮、碱解氮具有良好的相关性，2mm风干土碱解氮建模的决定系数R^2为92.39，相对标准偏差为7.5%；2mm风干土全氮建模的决定系数R^2为88，相对标准偏差为8.2%;0.15mm的全氮建模的决定系数R2为89.86，相对标准偏差为7.2%;0.15mm风干土有机质建模的决定系数R^2为96.41，相对标准偏差为8.3%。因此，用近红外光普法测定土壤有机质、全氮、碱解氮的含量是可行的。