Structural and electrical properties of SrTiO3 thin films as insulator of metal-ferroelectric-insulator-semiconductor （MFIS） structures

SrTiO₃ (STO) thin films were deposited on p-Si(100) substrates at various substrate temperatures from 300℃ to 700℃ by radio frequency (RF) magnetron sputtering technique. Their structure and electrical properties were investigated. It was found that the transition from amorphous phase to polycrystalline phase occurred at the substrate temperatures 300--400℃. Their crystallinity became better when the substrate temperatures further increased. The dielectric and leakage current measurements were carried out by using the Si/STO/Pt metal--insulator--semiconductor (MIS) structures at room temperature. It was found that the fixed charge density decreased and both the interface trap density and the dielectric constant increased when the substrate temperatures were increased. The leakage current mechanisms for STO MIS structures with STO films prepared at 700℃ followed the space charge limited current (SCLC) under the low applied electric field and the Poole--Frenkel emission under the high one. In addition, the resistivity for films prepared at 700℃ was higher than 10¹¹\Omega \cdot cm under the voltage lower than 10V (corresponding to the electric field of 1.54\times 10³kV\cdotcm^-1). It suggested that the STO films prepared at 700℃ were suitable for acting as the insulator of metal--ferroelectric--insulator--semiconductor (MFIS) structures.     

锆钛酸铅双层膜的铁电及光学特性研究

采用化学溶液沉积法在LaNiO₃涂布的硅晶片上制备了高度(100)择优取向,表面均匀、平整、致密无裂纹的PbZr_0.5Ti_0.5O₃/PbZr_0.4Ti_0.6O₃双层膜. 双层膜具有单一的钙钛矿相,同时拥有良好的铁电性能,剩余极化强度高达64μC/cm²,平均矫顽场仅为43.6kV/cm. 棱镜-薄膜耦合实验结果表明PbZr_{关键词： 铁电薄膜 平板光波导 锆钛酸铅 棱镜-薄膜耦合}