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We report the observation of in-plane anisotropic magnetoresistance and planar Hall effect in non-magnetic HfTe5 thin layers.The observed anisotropic magnetoresistance as well as its sign is strongly dependent on the critical resistivity anomaly temperature Tp.Below Tp,the anisotropic magnetoresistance is negative with large negative magnetoresistance.When the in-plane magnetic field is perpendicular to the current,the negative longitudinal magnetoresistance reaches its maximum.The negative longitudinal magnetoresistance effect in HfTe5 thin layers is dramatically different from that induced by the chiral anomaly as observed in Weyl and Dirac semimetals.One potential underlying origin may be attributed to the reduced spin scattering,which arises from the in-plane magnetic field driven coupling between the top and bottom surface states.Our findings provide valuable insights for the anisotropic magnetoresistance effect in topological electronic systems and the device potential of HfTe5 in spintronics and quantum sensing.  相似文献   
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针对一类前馈—反馈的气动力/直接力复合控制导弹自动驾驶仪结构特点,基于对直接力喷流装置放大因子与攻角的对应关系和直接力寄生回路的耦合机理的分析,完成了气动力/直接力复合控制系统的非线性建模,并采用Lyapunov非线性稳定性理论,对复合控制导弹自动驾驶仪的鲁棒稳定性问题进行了证明,给出了采用气动力/直接力复合控制导弹自动驾驶仪的稳定域,具有较好的工程参考价值。  相似文献   
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