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The Schottky photodetector was fabricated on GaN epilayers grown by
metalorganic chemical vapour deposition (MOCVD). The spectral response of the
Schottky photodetector was characterized. A new model is proposed to
interpret the characteristic of the spectral response curve of the Schottky
photodetectors by introducing a penetrating distance of an incident light at
a certain wavelength in the current continuity equation and the interface
recombination at the metal--semiconductor rectifying contact. The expressions
for the spectral response of the Schottky photodetector are deduced and used
successfully to fit the experimental data. 相似文献
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