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微机电系统(Microelectromechanical System, MEMS)器件的疲劳可靠性问题往往可追溯到某一关键元件的性能退化.更本质的,其失效机理往往又可追溯到材料的微缺陷演化.因此,建立一种MEMS元件的材料微缺陷演化模型对探究失效机理意义重大.本文基于连续介质损伤力学理论方法对MEMS金属薄膜建立了微缺陷表征的损伤模型,进一步建立了电阻退化模型.通过本模型的建立,在一定工况条件下,可以预测基于电阻性能的MEMS薄膜可靠性问题.对建立的模型进行反演分析,结果与试验数据对比较好,验证了模型建立的正确性.本文为研究MEMS的疲劳失效机理及可靠性优化策略提供了重要理论基础. 相似文献
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压电体椭圆孔边的力学分析 总被引:5,自引:0,他引:5
基于复变函数的方法,以PZT-4材料为例,分别采用精确电边界条件和非导通电边界条件进行了远场均匀载荷作用下的横观各向同性压电体椭圆孔的力学分析并与相关结果进行对比。结果表明当椭圆孔退化为圆孔时,无论在远场作用力载荷或电载荷,两种电边界条件下的结果均能完全吻合。随着椭圆孔的愈加尖锐化,非导通电边界条件逐渐不能适用。 相似文献
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By using the complex variables function theory, a plane strain electro-elastic analysis was performed on a transversely isotropic piezoelectric material containing an elliptic elastic inclusion, which is subjected to a uniform stress field and a uniform electric displacement loads at infinity. Based on the present finite element results and some related theoretical solutions, an acceptable conjecture was found that the stress field is constant inside the elastic inclusion. The stress field solutions in the piezoelectric matrix and the elastic inclusion were obtained in the form of complex potentials based on the impermeable electric boundary conditions. 相似文献
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