Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.     

CO_2激光边带光谱仪用于SF_6分子v_3带Q支吸收谱的研究

用绝对频率精度优于1.2MHz的CO_2激光边带光谱仪记录了SF_6分子v_3带Q支的多普勒受限吸收谱,光谱范围在CO_2激光10P(16)支线中心两侧,距支线中心8.0～12.4 GHz。用内插法以<6MHz的均方误差测量了百余条跃迁谱线的频率,并标识出Q_Z、Q_R、Q_X、Q_W、Q_A等亚支的谱线,量子数J从26到83。用最小二乘法拟合实验数据得到了v_3带的部分光谱常数。     

Formation mechanism of ethanol-water excimer

The fluorescent spectrum and the excitation spectrum were used to present the cluster molecular structure feature in ethanol-water solutions.Through analyzing the fluorescent characteristics of an excimer,it is proposed that the excimers are formed between the ethanol-water cluster molecules in the excited state and in the ground state.The fluorescent lifetime and the fluorescent intensity decay process give information about the photo-physical and photo-chemical processes of the formation and the dissociation of an excimer. The theoretical calculation and physical analysis coincide with the experimental results.The preliminary conclusion about the structure feature of ethanol-water cluster molecule is that it has a planar one like a sandwich.     

气相色谱-质谱联用法测定乐果的不确定度评定

本文以测定样品中乐果的含量为例,评定了气相色谱-质谱联用法测定结果的不确定度.建立数学模型,分析各不确定度分量,将不确定度分量合成,并计算其测定结果的扩展不确定度.     

氯化十六烷基吡啶——苯基荧光酮吸附伏安法测定痕量锆

本文研究了苯基荧光酮(PF)-Zr-氯化十六烷基吡啶(CPC)体系的吸附伏安特性,确定了适宜的分析测试条件.方法对锆的检测下限为0.7ppb,测量的线性范围1.1×10~(-8)-1.1×10~(-7)mol/L,可用于矿石中痕量锆的测定。     

液相色谱-串联质谱法测定花生中丙硫菌唑及其脱硫代谢物

建立了液相色谱-串联质谱(HPLC-MS/MS)同时检测花生中丙硫菌唑及其主要代谢物硫酮菌唑的方法.花生样品经乙腈提取后,用乙腈饱和的正己烷除掉脂类杂质,C18分散固相萃取净化样品.采用含有5 mmol/L乙酸铵、0.2％乙酸和乙腈作为流动相进行梯度洗脱,在电喷雾-多反应监测离子模式下进行定性与定量分析.丙硫菌唑和硫酮菌唑在2.0,4.0和20.0 μg/kg的添加浓度时回收率为87.22％～102.46％;相对标准偏差小于10.0％;方法定量限为2.0 μg/kg.     

超高效液相色谱-四极杆/静电场轨道阱高分辨质谱法非靶向筛查苹果中苯脲类农药

建立了超高效液相色谱－四极杆/静电场轨道阱高分辨质谱（UPLC-Q/Orbitrap HRMS）非靶向筛查苹果中苯脲类农药的方法。样品采用QuEChERS法提取净化,Acquity BEH C18色谱柱（100 mm × 2.1 mm,1.7 μm）分离,以甲醇和含0.1%甲酸的水溶液为流动相进行梯度洗脱,在电喷雾正离子模式下采用四极杆/静电场轨道阱高分辨质谱进行检测。将13种苯脲类除草剂和9种苯甲酰脲类杀虫剂按化学结构分为4类。首先通过对4类22种典型苯脲类农药标准品的准分子离子和二级质谱碎片进行分析,总结苯脲类农药的质谱裂解规律如下：绿麦隆等9种苯脲类除草剂的主要特征离子碎片为m/z 72.044 59,可通过特征丢失中性分子二甲胺（m/z 45.058 03）产生特征离子碎片;绿谷隆等4种苯脲类除草剂可通过特征丢失中性分子甲醇［CH3OH］或卤化氢［HR1］（R=Cl,Br,F）产生离子碎片;除虫脲等7种含氟苯甲酰脲杀虫剂的主要特征离子碎片为 m/z 158.040 47、141.015 00,也可发生特征中性丢失2,6-氟苯甲酰胺结构［C8H3F2O2NH2］（m/z 183.013 21）;杀铃脲等2种含氯苯甲酰脲类杀虫剂的主要特征离子碎片为m/z 156.020 25、138.993 76、113.015 28。利用该方法对北京12份市售苹果进行非靶向筛查,在1份样品中筛查出绿麦隆。该方法可为快速筛查农产品中相似结构特征的苯脲类化合物提供参考。     

固相萃取/高效液相色谱-串联质谱法测定黄瓜及土壤中的春雷霉素残留

建立了测定黄瓜和土壤中春雷霉素残留的固相萃取/高效液相色谱-串联质谱(SPE/HPLC-MS/MS)方法。黄瓜和土壤样品分别经1%甲酸的甲醇、0.5%甲酸水提取后,采用MCX固相萃取柱净化,以Waters Xbridge BEH Amide色谱柱分离,0.2%甲酸水-乙腈溶液进行梯度洗脱,电喷雾正离子(ESI+)模式电离,多反应监测(MRM)模式检测,基质匹配标准曲线外标法定量。该方法灵敏、准确、简单快速、重复性好,在2~250μg/L浓度范围内,不同基质中春雷霉素的线性相关系数均大于0.999,检出限为0.002 mg/kg,定量下限为0.008 mg/kg;在0.008、0.040、0.200、0.400 mg/kg 4个加标水平下,春雷霉素在黄瓜和土壤样品中的平均回收率为77.5%~97.0%,相对标准偏差为2.6%~10.7%,能够满足黄瓜及土壤中春雷霉素残留的检测需求。应用该法对田间样品进行检测,结果表明,春雷霉素在黄瓜中的残留量不超过0.053 mg/kg,小于我国规定的黄瓜中最大残留限量(0.2 mg/kg);土壤中春雷霉素的残留量不超过0.013 mg/kg。     

Radiation induced inter-device leakage degradation

The evolution of inter-device leakage current with total ionizing dose in transistors in 180 nm generation technologies is studied with an N-type poly-gate field device (PFD) that uses the shallow trench isolation as an effective gate oxide. The overall radiation response of these structures is determined by the trapped charge in the oxide. The impacts of different bias conditions during irradiation on the inter-device leakage current are studied for the first time in this work, which demonstrates that the worst condition is the same as traditional NMOS transistors. Moreover, the two-dimensional technology computer-aided design simulation is used to understand the bias dependence.     

毛细管电色谱硅胶整体柱的制备与性能研究

以甲基丙烯酸丙酯基三甲氧基硅烷(MPTMS)为单体,甲苯为致孔剂,偶氮二异丁腈(AIBN)为引发剂,盐酸为催化剂,采用热引发法制备毛细管电色谱硅胶整体柱.在反相毛细管电色谱条件下,对中性化合物硫脲,苯,萘,芴,蒽实现了基线分离了.柱效超过100,000 plates/m.探讨了该柱的制备条件如单体比例,毛细管内径,制柱反应时间对分离的影响,并且在电色谱条件下考察了有机溶剂比例,pH值,电压和温度对分离的影响.