Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures

In this study,indium oxide(In_2O_3) thin-film transistors(TFTs) are fabricated by two kinds of low temperature solution-processed technologies(Ta ≤ 300?C),i.e.,water-based(DIW-based) process and alkoxide-based(2-ME-based)process.The thickness values,crystallization properties,chemical structures,surface roughness values,and optical properties of In_2O_3 thin-films and the electrical characteristics of In_2O_3 TFTs are studied at different annealing temperatures.Thermal annealing at higher temperature leads to an increase in the saturation mobility(μsat) and a negative shift in the threshold voltage(VTH).The DIW-based processed In_2O_3-TFT annealed at 300?C exhibits excellent device performance,and one annealed at 200?C exhibits an acceptable μsat of 0.86 cm~2/V·s comparable to that of a-Si:H TFTs,whereas the 2-ME-based TFT annealed at 300?C exhibits an abundant μsat of 1.65 cm~2/Vs and one annealed at 200?C is inactive.The results are attributed to the fact that the DIW-based process induces a higher degree of oxidation and less defect states than the 2-ME-based process at the same temperature.The DIW-based process for fabricating the In_2O_3 TFT opens the way for the development of nontoxic,low-cost,and low-temperature oxide electronics.     

轨道车辆轮对踏面面型检测方法研究

轮对是列车的重要部件,轮对踏面的关键尺寸参数是否超限关乎车辆行驶安全,因此必须定期对列车轮对踏面磨损状况进行检测.提出一种测量轮对踏面面型的方法,包括测量系统设计以及改进的灰度中心算法处理.在此基础上,建立模拟轮对踏面检测实验系统,对轮对踏面面型测量的精度进行了实验研究,在踏面分别贴上厚度分别为1～10 mm的块规,测...     

浙江省老龄化空间格局演变及驱动机制

基于浙江省第六、七次人口普查数据,使用探索性空间数据分析和空间计量模型分析2010—2020年浙江省县域尺度人口老龄化的空间格局演变及其驱动机制.研究结果发现:(1)浙江省人口老龄化程度整体加深,老龄化空间格局由“团带式”转变为“团点式”,各县级单元之间老龄化存在正向空间相关性,其中低-低集聚区主要分散分布在西南部,零星分布于北部和东部,高-高集聚区主要分布在西部地区,且范围有所增大;(2)以出生率和死亡率为主的人口变化因素是影响浙江省老龄化空间格局的直接原因,教育水平、医疗资源和经济水平等地区社会经济发展差异是根本原因.因此,浙江省应从完善基础设施、优化人口政策等方面应对老龄化社会.     

退火温度和Ga含量对溶液法制备InGaZnO薄膜晶体管性能的影响

采用溶液法在玻璃衬底上制备InGaZnO薄膜,并以InGaZnO为沟道层制备底栅顶接触型薄膜晶体管,研究了退火温度和Ga含量对InGaZnO薄膜和晶体管电学性能的影响.研究表明,退火可以明显改善溶液法制备InGaZnO薄膜晶体管的电学性能.退火温度的升高会导致薄膜晶体管阈值电压的负向漂移,并且饱和迁移率和电流开关比增大.X射线光电子能谱测量表明,随退火温度的增加,InGaZnO薄膜表面吸附氧减少,沟道层中氧空位增多导致电子浓度增大.退火温度为380?C时,晶体管获得最佳性能.饱和迁移率随Ga含量的增加而减小.In:Ga:Zn摩尔比为5:1.3:2时,晶体管达到最佳性能:饱和迁移率为0.43 cm~2/(V·s),阈值电压为1.22 V,开关电流比为4.7×10~4,亚阈值摆幅为0.78 V/decade.