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1.
The objective of this study is to evaluate the potential for recovering fluorocarbons as measures for the abatement of global warming. In this study, we focused on the three different kinds of fluorocarbons: CFCs, HCFCs and HFCs, and targeted refrigerant use because of the availability of relevant data. We first estimated future fluorocarbon emissions from the targeted appliances; we next compared those emissions in the units of CO2 equivalent to the level of CO2 emissions in 1990 from a quantitative point of view. As the result of this study, it was found that fluorocarbon emissions in 1999 and 2010 would be equal to approximately 7 and 3% of the level of CO2 emissions in 1990 respectively. Moreover, if we implement a 100% recovery rate in every recovery route, we can reduce a large amount of emissions which correspond to approximately 2–5% of the level of CO2 emissions in 1990, even if we take into account the energy-related CO2 emissions by the transportation and decomposition of fluorocarbons.  相似文献   
2.
We constructed and tested a prototype gas sampling electromagnetic calorimeter of the Pb-proportional tube sandwich type. The calorimeter uses conductive plastic tubes and cathode pad readout with a tower structure which resulted in reasonable energy and spatial resolutions for electrons in the momentum range 0.5–4.0 GeV/c; σEE = 21%(E(GeV))12, σx = 6 mm (at 3 GeV/c). This paper describes the test and the performance studied under various conditions.  相似文献   
3.
A rare case of hepatoblastoma in a 61-year-old Japanese housewife is described. This liver tumor mainly consisted of two tissue components: embryonal hepatocytes and primitive mesenchymal tissue. Fetal hepatocytes with alpha-fetoprotein production, gland formation, cartilage and osteoid were also found in a small portion. Molecular analysis by slot blot method revealed increased copy numbers of c-met and K-sam proto-oncogenes and cyclin D1 genes. These findings suggest that alterations of these oncogenes might play a role in the development of adult hepatoblastoma.  相似文献   
4.
A new mathematical model for study of an interface crack between two dissimilar elastic half planes is proposed. A process zone is formed along the interface between the physical crack and the continuous part. Both the crack opening (and sliding) displacement with a smooth shape and the finite magnitude of stress concentration appear in this zone. The analytical model is expressed by closed elastic solutions using complex variables, but with no oscillations at the crack tip.  相似文献   
5.
One of the most promising approaches for high speed networks for integrated service applications is fast packet switching, or ATM (asynchronous transfer mode). ATM can be characterized by very high speed transmission links and simple, hard-wired protocols within a network. To match the transmission speed of the network links, and to minimize the overhead due to the processing of network protocols, the switching of cells is done in hardware switching fabrics in ATM networks. A number of designs have been proposed for implementing ATM switches. Although many differences exist among the proposals, the vast majority of them are based on self-routeing multistage interconnection networks. This is because of the desirable features of multi-stage interconnection networks such as self-routeing capability and suitability for VLSI implementation. Existing ATM switch architectures can be classified into two major classes: blocking switches, where blockings of cells may occur within a switch when more than one cell contends for the same internal link, and non-blocking switches, where no internal blocking occurs. A large number of techniques have also been proposed to improve the performance of blocking and non-blocking switches. In this paper, we present an extensive survey of the existing proposals for ATM switch architectures, focusing on their performance issues.  相似文献   
6.
A novel on-chip electrostatic discharge (ESD) protection for high-speed CMOS LSI's that operate at higher than 500 MHz has been developed. Introduction of a newly developed common discharge line (CDL) can completely eliminate the protection device influence on the inner circuit operation. This enables minimization of the I/O capacitance by shrinking the dimension of the output transistor, which also serves as a protection device in conventional devices. This new protection (CDL protection) was applied to a high-speed DRAM of which I/O pin capacitance specification is 2 pF. As a result, the ESD tolerance of 4 kV for the charged device model test, 4 kV for the human body model test, and 700 V for the machine model test were obtained. In addition, the DRAM data rate higher than 660 MHz at room temperature was achieved. The results show significant improvement for both ESD and the I/O capacitance, compared with the conventional structure  相似文献   
7.
This paper focuses on the microscopic damage and progressive failure of a composite reinforced by plain-weave glass cloth under tensile fatigue loading. The fatigue process was divided into three stages like that of multi-directional laminates. It was found that the internal damage at each stage (matrix cracks, debonds in the weft, successive debonds in the warp and ‘metadelaminations’ between warps and wefts) occurred near the cross-over point of the fabric. The modulus decay mechanism was explained by considering the progression of this internal damage. From the end of the first stage to the beginning of the middle stage, a characteristic damage state (CDS) (called a ‘meta-CDS’) was observed. It was found that woven composites have a unit area of damage accumulation (called a ‘unit cell’) and the damage of each unit cell and its distribution control the total fatigue damage of the material.  相似文献   
8.
We synthesized new composite particles for hydrogen storage on the basis of an idea of “particle designing”. As starting materials, powders of Mg and YNi2 were selected. Fine composite particles containing mainly Mg2Ni could be designed by repetitive hydriding and dehydriding cycles at 673 K. In the synthesis process of the composite particles, the following two points were found to be essential for this technique. The first point is that, after being activated by the sequential processes of hydrogenation, amorphization and disproportionation, YNi2 reacts effectively with Mg. The second point is that evaporated Mg, which occurs during dehydriding, adheres to the surface of the activated YNi2 and accelerates a diffusion reaction to form Mg2Ni at the interface. In these composite particles, Mg2NiH4 is formed, even at 373 K, under a hydrogen pressure of 5 MPa.  相似文献   
9.
A case of huge desmoid tumor successfully treated by hyperthermoradiotherapy is described. A 23-year-old man with familial adenomatous polyposis was operated upon for a desmoid tumor in the mesenterium involving the right kidney and small intestine in 1988. In 1990, the tumor recurred and could not be resected because of the involvement of the vena cava. The tumor grew larger and larger, and occupied two-thirds of the right lower quadrant. Several therapies using sulindac, tamoxifen, prednisolone, indomethacin, luteinizing hormone-releasing hormone analogue, and ascorbate were all ineffective. Finally, the combination of radiation and hyperthermia was used over a 6-month period. At the end of the hyperthermoradiotherapy, the tumor in the abdominal wall was markedly reduced in size, and the protruded abdominal wall became flat. To our best knowledge, this is the first report of the successful treatment of a huge desmoid tumor by hyperthermoradiotherapy.  相似文献   
10.
The authors describe a novel design concept for enhancement (E) and depletion (D) mode FET formation using i-AlGaAs/n-GaAs doped-channel hetero-MISFET (DMT) and a novel self-aligned gate process technology for submicrometer-gate DMT-LSIs based on E/D logic gates. 0.5-μm gate E-DMTs (D-DMTs) with a lightly doped drain (LDD) structure show an average Vt of 0.18 (-0.46) V, a Vt standard deviation of 22.6 (24.9) mV, and a maximum transconductance of 450 (300) mS/mm. The Vt shift is less than 50 mV with a decrease in gate length down to 0.5 μm. The gate forward turn-on voltage Vf is more than 0.9 V, i.e. about 1.6 times that for MESFETs. This superiority in V f, preserved in the high-temperature range, leads to an improvement in noise margin tolerance by a factor of three. In addition, 31-stage ring oscillators operate with a power consumption of 20 (1.0) mW/gate and a propagation delay of 4.8 (14.5) ps/gate. Circuit simulation based on the experimental data predicts 140 ps/gate and 1 mW/gate for DMT direct-coupled FET logic circuits under standard loading conditions. DMTs and the technology developed here are very attractive for realizing low-power and/or high speed LSIs  相似文献   
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