令客户满意的五条法则及为何其重要性往往被过分夸大

根据哈佛商学院最著名的教授MichaelPorte r的观点:"运营效率意味着你能在一场赛跑中跑得更快,而战略却能帮你选择一场能最终获胜的赛跑."(引自"Michael Porte r归来",<财富>1999年2月刊.)现今,客户满意度--令客户喜欢你的产品及服务的程度,取决于企业的运营效率.因此,将企业比作一艘船,如果船即将撞上冰山,即使你能令乘客满意到最后,但却不能避免整艘船的沉没.要想成功绕开冰山,你只有想出优于对手的战略.     

Clarification of a wheat straw‐derived medium with ion‐exchange resins for xylitol crystallization

BACKGROUND: Xylitol bioproduction from lignocellulosic residues comprises hydrolysis of the hemicellulose, detoxification of the hydrolysate, bioconversion of the xylose, and recovery of xylitol from the fermented hydrolysate. There are relatively few reports on xylitol recovery from fermented media. In the present study, ion‐exchange resins were used to clarify a fermented wheat straw hemicellulosic hydrolysate, which was then vacuum‐concentrated and submitted to cooling in the presence of ethanol for xylitol crystallization. RESULTS: Sequential adsorption into two anion‐exchange resins (A‐860S and A‐500PS) promoted considerable reductions in the content of soluble by‐products (up to 97.5%) and in medium coloration (99.5%). Vacuum concentration led to a dark‐colored viscous solution that inhibited xylitol crystallization. This inhibition could be overcome by mixing the concentrated medium with a commercial xylitol solution. Such a strategy led to xylitol crystals with up to 95.9% purity. The crystallization yield (43.5%) was close to that observed when using commercial xylitol solution (51.4%). CONCLUSION: The experimental data demonstrate the feasibility of using ion‐exchange resins followed by cooling in the presence of ethanol as a strategy to promote the fast recovery and purification of xylitol from hemicellulose‐derived fermentation media. Copyright © 2008 Society of Chemical Industry     

Fast Full-Band Device Simulator for Wurtzite and Zincblende GaN MESFET Using a Cellular Monte Carlo Method

A fast full-band device simulator for wurtzite and zincblende GaN using a Cellular Monte Carlo (CMC) approach is reported for wurtzite and zincblende GaN. The full-phonon dispersion relationship including anisotropic polar-optical phonon scattering is taken into account for the wurtzite GaN calculation. In the bulk simulation, the CMC model is about 30–100 times faster than the conventional Ensemble Monte Carlo model at high electric field region. This CMC model is applied to the simulator of MESFET devices, and the calculation speed is significantly improved.     

Interobl: An interactive software tool for displaying and scaling oblique ionograms

By analyzing an oblique ionogram several characteristics, such as LOF, MOF, FMUF, FHLOF, FLLOF, and 2FMOF, can be found. These characteristics are important both for ionospheric studies and for terrestrial communication purposes, as they give information about the sky wave communication conditions in the High Frequency (HF) radio spectrum.A RCS-5B sweeping HF receiver for oblique sounding was installed at Chania (Crete, Greece, 35.7°N, 24.0°E) in April 2005 to perform a radio link with Inskip (UK, 53.5°N, 2.5°W). The receiver, able to record the sounding only as a binary file, was not equipped with a tool to display and scale the recorded trace. This work describes software that is able to do this, consequently increasing the speed of the scaling phase performed by the operator. The usefulness of this software for validating FMUF prediction models is also shown.     

Review of Psychologie de la famille.

Reviews the book, Psychologie de la famille by Monique V. G. Morval (1985). Morval presents a book with two views: the first looks at the axis of the family in light of systemic approaches and the second centers on the cycle of family life. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Nonlinear Creep Damage Model for Concrete under Uniaxial Compression

An isotropic model for creep damage of concrete under uniaxial compression is proposed, where the combined effect of nonlinear viscous strain evolution and crack nucleation and propagation at high stress levels is considered. Strain splitting assumption is used for creep and damage contributions. Creep is modeled by a modified version of solidification theory. As usual in the modeling of damage of concrete, a damage index based on positive strains is introduced. As particular cases, the proposed model reduces to linear viscoelasticity for long time low stress levels whereas, for very high stresses, tertiary creep causing failure at a finite time can be described. The effect of strength variation with time is also included. The model is numerically implemented to perform time integration of nonlinear equations by means of a modified version of exponential algorithm. The model is validated through comparison with experimental results. Some numerical examples are also presented, where the roles of concrete ageing and strength variation with time are investigated.     

Setting the trap for hot carriers [MOS VLSI]

The device degradation under ac and dc stress have been discussed and a relationship between the two has been established,. We have shown that the commonly used lifetime criteria of 10% linear current degradation for 10 years for a transistor under dc stress is overly conservative for representing the circuit operating lifetime. Using experimental and simulated data for inverter chains, we proposed that a meaningful equivalent lifetime based on 10% I_dl degradation under dc stress is 1 year lifetime (for a 10 year circuit lifetime based on 54b degradation in ring oscillator frequency). We also compared this criteria to actual circuit degradation for microprocessors and a DRAM. For DSP microprocessors with 0.8 μm LDD transistors, the projected lifetime was more than 200 years at 5.5 V, with a corresponding 10% I _dr lifetime of 20 years. For 1 Mb DRAMs with 1 pm LDD transistors, the 5% speed degradation lifetime at 5.5 V was more than 100 years, whereas the individual transistors had 10% I_dl lifetime of 4 years. These circuit results support the 10% I_dl transistor lifetime. We believe these criterion should be very safe and reasonable for digital IC chips currently in the field, as well as those in future design and development