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1.
D. A. Mirzaev N. I. Vorob’ev O. K. Tokovi D. V. Shaburov E. A. Fominykh 《Russian Metallurgy (Metally)》2006,(1):38-41
The solutions to a differential equation for the problem of heating of a cylinder in a medium with a fixed temperature are used to obtain equations for estimating the change in the hydrogen concentration in forgings from data on the hydrogen concentration at the cylinder axis or on the average bulk hydrogen concentration. Similar equations are also obtained for forgings having square cross sections. The calculation demonstrates that, for the case of a twofold decrease in the hydrogen concentration in a forging, the calculated times of annealing of a cylindrical forging differ by three times. 相似文献
2.
The state of the surface of n-GaAs crystals upon high-vacuum microwave plasmachemical (HVMWPC) etching in various gas mixtures and the influence of the semiconductor surface condition on the photoelectric characteristics of related metal-semiconductor-metal structures with double Schottky barrier (MSMDSB structures) are investigated. Dependence of the HVMWPC etching rate of the GaAs surface on the gas mixture composition and substrate temperature is determined. It is shown that the HVMWPC etching regime strongly influences the photoelectric properties of MSMDSB structures: the treatment can lead to either growth or drop in photosensitivity of the samples. Optimum etching regimes are established for which good semiconductor surface quality and high photosensitivity of the MSMDSB structures are retained at a high etching rate. 相似文献
3.
Phase transformations in particles of ultrafine powders of graphite, hexagonal boron nitride, and quartz during rapid heating and cooling by passage through a laser beam were investigated. A continuous infrared laser with a wavelength of 10.6 μm was used as a heat source through which the powders were recycled several times. Methods of concentrating the product phases are described. Particles of diamond, carbides, cubic boron nitride, koesite and stishovite were obtained in the mixed products. 相似文献
4.
V. V. Mamutin O. V. Bondarenko A. P. Vasil’ev A. G. Gladyshev A. Yu. Egorov N. V. Kryzhanovskaya V. S. Mikhrin V. M. Ustinov 《Technical Physics Letters》2007,33(5):384-387
The optical properties of heterostructures comprising InAs/InGaAsN quantum wells in strain-compensated GaAsN/InGaAsN superlattices have been studied. It is demonstrated that, using such superlattices of various design and thickness and with additional InAs monolayer spacers, it is possible to control the wavelength of room-temperature emission from InGaAsN quantum wells within 1.3–1.6 μm without deteriorating the output radiation characteristics, which opens additional prospects for the development of lasers on GaAs substrates for telecommunication applications. 相似文献
5.
E. V. Golikova V. S. Grigor’ev V. I. Kuchuk T. S. Mashchenko L. P. Efimenko A. T. D’yachkova 《Glass Physics and Chemistry》2008,34(5):582-598
The aggregate stability of submicron and nanosized ZrO2 aqueous sols of different origins and different dispersities at pH 3–10 in the KCl concentration range 10?3–10?1 M is investigated by flow ultramicroscopy and photometry. The results obtained are analyzed in the framework of the extended Derjaguin-Landau-Verwey-Overbeek theory and the Muller-Martynov theory of reversible aggregation. The extension of boundary layers of water near the surface of the ZrO2 particles is estimated. 相似文献
6.
V. N. Jmerik A. M. Mizerov T. V. Shubina A. V. Sakharov A. A. Sitnikova P. S. Kop’ev S. V. Ivanov E. V. Lutsenko A. V. Danilchyk N. V. Rzheutskii G. P. Yablonskii 《Semiconductors》2008,42(12):1420-1426
Features of plasma-assisted molecular-beam epitaxy of AlGaN compounds at relatively low temperatures of the substrate (no higher than 740°C) and various stoichiometric conditions for growth of the nitrogen- and metal-enriched layers are studied. Discrete submonolayer epitaxy for formation of quantum wells and n-type blocking layers without varying the fluxes of components was used for the first time in the case of molecular- beam epitaxy with plasma activation of nitrogen for the nanostructures with the Al x Ga1 ? x N/Al y Ga1 ? y N quantum wells. Structural and optical properties of the Al x Ga1 ? x N layers in the entire range of compositions (x = 0–1) and nanostructures based on these layers are studied; these studies indicate that there is photoluminescence at room temperature with minimum wavelength of 230 nm. Based on the analysis of the photoluminescence spectra for bulk layers and nanoheterostructures and their temperature dependences, it is concluded that there are localized states in quantum wells. Using the metal-enriched layers grown on the c-Al2O3 substrates, heterostructures for light-emitting diodes with Al x Ga1 ? x N/Al y Ga1 ? y N quantum wells (x = 0.4–0.5, y = x + 0.15) were obtained and demonstrated electroluminescence in the ultraviolet region of the spectrum at the wavelength of 320 nm. 相似文献
7.
Ivan Fortelný Monika Lapčíková František Lednický Zdeněk Starý Zdeněk Kruliš 《Polymer Engineering and Science》2008,48(3):564-571
This article is focused on the phase structure development in immiscible polymer blends during melt mixing. Nonuniformity of the phase structure, i.e., the coexistence of areas containing particles with markedly different size distribution, was detected in quenched and compression molded samples of a number of various blends prepared by long and intensive mixing in the chamber of a Plasticorder. The same effect was found also for polystyrene/polyamide blends prepared in a twin‐screw extruder. It was shown that neglecting nonuniformity of the phase structure can lead to considerable error in evaluation of the effect of system parameters on the blend morphology. The reasons for the effect were discussed and it was found that inhomogeneous flow field in mixers is a plausible explanation of the nonuniform phase structure. POLYM. ENG. SCI., 2008. © 2008 Society of Plastics Engineers 相似文献
8.
M. M. Zverev N. A. Gamov D. V. Peregoudov V. B. Studionov E. V. Zdanova I. V. Sedova S. V. Gronin S. V. Sorokin S. V. Ivanov P. S. Kop’ev 《Semiconductors》2008,42(12):1440-1444
Emission characteristics of an electron-beam-pumped Cd(Zn)Se/ZnMgSSe semiconductor laser are studied. The laser’s active region consists of a set of ten equidistant ZnSe quantum wells containing fractional-monolayer CdSe quantum-dot inserts and a waveguide formed by a short-period superlattice with the net thickness of ~0.65 μm. Lasing occurs at room temperature at a wavelength of 542 nm. Pulsed power as high as 12 W per cavity face and an unprecedentedly high efficiency of ~8.5% are attained for the electron-beam energy of 23 keV. 相似文献
9.
A. P. Vasil’ev V. P. Vasyukhno M. E. Netecha V. L. Vysotskii R. I. Kalinin A. A. Sarkisov A. Yu. Kazennov Yu. V. Sivintsev A. M. Chernyaev 《Atomic Energy》2006,101(1):506-511
The radioecological conditions which developed on the territory over the long operating time of the object of the naval fleet
in Guba Andreev are described. The results of an analysis of the sources of the real and potential danger and measures to
prevent dangerous effects for the environment and the workers at the time remediation work is performed are discussed.
__________
Translated from Atomnaya énergiya, Vol. 101, No. 1, pp. 49–55, July, 2006. 相似文献
10.
ZnO-based varistor samples were prepared by the direct mixing of the constituent phases (DMCP) and sintering at 1100 °C for 2 h. The influence of the starting powder mixture's composition – the amounts of the pre-reacted varistor compounds and their composition – and its preparation, either with or without mechano-chemical activation (MCA), on the microstructure, phase composition and electrical characteristics of the varistor samples was studied. It showed that MCA improved the density and microstructural homogeneity of the varistor samples. MCA strongly affected the grain growth: it enhanced the nucleation of inversion boundaries (IBs) in the ZnO grains and the IBs-induced grain-growth mechanism resulted in uniform grain growth and hence a microstructure with smaller ZnO grains and a narrower grain size distribution. The final phase composition of the samples prepared by the DMCP method mainly depended on the presence of varistor dopants that can prevent the formation of the pyrochlore phase, especially Cr2O3, while MCA can affect it mostly by providing a homogeneous distribution of those dopants. The DMCP varistor samples prepared with MCA had much better current–voltage characteristics than the samples of the same composition prepared from unactivated powders. 相似文献