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The dream of epitaxially integrating III-nitride semiconductors on large diameter silicon is being fulfilled through the joint R&D efforts of academia and industry, which is driven by the great potential of Ga N-onsilicon technology in improving the efficiency yet at a much reduced manufacturing cost for solid state lighting and power electronics. It is very challenging to grow high quality Ga N on Si substrates because of the huge mismatch in the coefficient of thermal expansion(CTE) and the large mismatch in lattice constant between Ga N and silicon, often causing a micro-crack network and a high density of threading dislocations(TDs) in the Ga N film.Al-composition graded Al Ga N/Al N buffer layers have been utilized to not only build up a compressive strain during the high temperature growth for compensating the tensile stress generated during the cool down, but also filter out the TDs to achieve crack-free high-quality n-Ga N film on Si substrates, with an X-ray rocking curve linewidth below 300 arcsec for both(0002) and(10N12) diffractions. Upon the Ga N-on-Si templates, prior to the deposition of p-Al Ga N and p-Ga N layers, high quality In Ga N/Ga N multiple quantum wells(MQWs) are overgrown with well-engineered V-defects intentionally incorporated to shield the TDs as non-radiative recombination centers and to enhance the hole injection into the MQWs through the via-like structures. The as-grown Ga N-on-Si LED wafers are processed into vertical structure thin film LED chips with a reflective p-electrode and the N-face surface roughened after the removal of the epitaxial Si(111) substrates, to enhance the light extraction efficiency. We have commercialized Ga N-on-Si LEDs with an average efficacy of 150–160 lm/W for 1mm~2 LED chips at an injection current of 350 m A, which have passed the 10000-h LM80 reliability test. The as-produced Ga N-on-Si LEDs featured with a single-side uniform emission and a nearly Lambertian distribution can adopt the wafer-level phosphor coating procedure, and are suitable for directional lighting, camera flash, streetlighting, automotive headlamps, and otherlighting applications. 相似文献
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为改善镍锰酸锂的电化学性能,以硝酸铟(In(NO3)3·H2O)为原料,通过高温固相法在镍锰酸锂电极材料表面包覆一层惰性氧化铟(In2O3),并研究不同In2O3包覆量对镍锰酸锂复合材料的电化学性能的影响。XRD测试结果显示,包覆氧化铟并不会改变正极材料LiNi0.5Mn1.5O4自身结构。当包覆量为7%时,在0.1 mA的测试电流下首次放电比容量为134.21 mAh/g,明显高于未涂覆材料(115.65 mAh/g),100次循环后容量为128.4 mAh/g,容量保持率为95.67%;在0.5 mA的测试电流条件下,首次放电比容量为78.13 mAh/g, 100次循环后比容量为56.25 mAh/g,容量保持率为64.44%。In2O3包覆起到保护材料和促进离子传导的作用,可有效提高正极材料的电化学性能。 相似文献
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机械活化木薯淀粉干法制备羧甲基淀粉的研究 总被引:1,自引:1,他引:1
研究了以机械活化60 min的木薯淀粉为原料,采用干法工艺制备羧甲基淀粉(CMS).探讨了机械活化时间、反应时间、反应温度、催化荆用量、醚化剂用量及体系含水量对木薯羧甲基淀粉取代度(DS)的影响.实验结果表明,机械活化对木薯淀粉的羧甲基化反应有显著的强化作用:木薯淀粉的DS随活化时间的延长而增大.活化60 min的样品在条件为反应时间120 min、ClCH2COOH与淀粉的摩尔比0.55、NaOH与淀粉的摩尔比0.55、反应温度60℃、体系含水量18%时制得的CMS的DS为0.88%,而在相同条件下,由原木薯淀粉制得的CMS的DS仅为0.23%. 相似文献
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Preparation of GaN-on-Si based thin-film flip-chip LEDs 总被引:1,自引:1,他引:0
GaN based MQW epitaxial layers were grown on Si(111) substrate by MOCVD using AIN as the buffer layer.High light extraction LEDs were prepared by substrate transferring technology in combination with thin-film and flip-chip design.The blue and white 1.1×1.1 mm~2 LED lamps are measured.The optical powers and external quantum efficiency for silicone encapsulated blue lamp are 546 mW,and 50.3%at forward current of 350 mA, while the photometric light output for a white lamp packaged with standard YAG phosphor is 120.1 lm. 相似文献