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The article describes the experience of implementing patient-focused care from a physician's perspective. Pitfalls that guarantee failure are presented, many of which are avoidable with early participation by all parties involved: administrators, nursing staff, physicians, and patients. Contamination of the process with downsizing needs, lack of support for staff in dealing with necessary change, loss of administrative commitment, and withholding of appropriated funds are among the key errors to be avoided. 相似文献
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A. Ivanov 《Journal of Electronic Testing》2002,18(4-5):361-362
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P. V. Zrelov V. V. Ivanov 《Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment》1991,310(3):623-630
The statistical method of identification of relativistic charged particles by measurements of ionization losses or time-of-flights simultaneously in some detectors of an experimental plant on the basis of the new goodness-of-fit ωn3-criterion is considered. The method proposed has been used for the secondary particles identification from the high energy -particles fragmentation on target nuclei. The efficiency of the method is excellently illustrated by reliable separation of events (rare events as well), connected with the appearence of 1- and 2-charged particles. The comparison of the ωn3-method with the traditional methods and with the method based on the ωn2-criterion shows that the new method outperforms the ωn2-method and most of the traditional ones in efficiency, but compares unfavourably with the likelihood method in power, however, the former has a number of advantages as compared with the latter. 相似文献
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Various heat insulation materials produced at home and abroad are compared. The advantage of using natural nano-structured
materials is substantiated.
Translated from Novye Ogneupory, No. 7, pp. 41–44, July 2008. 相似文献
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V. N. Jmerik A. M. Mizerov T. V. Shubina A. V. Sakharov A. A. Sitnikova P. S. Kop’ev S. V. Ivanov E. V. Lutsenko A. V. Danilchyk N. V. Rzheutskii G. P. Yablonskii 《Semiconductors》2008,42(12):1420-1426
Features of plasma-assisted molecular-beam epitaxy of AlGaN compounds at relatively low temperatures of the substrate (no higher than 740°C) and various stoichiometric conditions for growth of the nitrogen- and metal-enriched layers are studied. Discrete submonolayer epitaxy for formation of quantum wells and n-type blocking layers without varying the fluxes of components was used for the first time in the case of molecular- beam epitaxy with plasma activation of nitrogen for the nanostructures with the Al x Ga1 ? x N/Al y Ga1 ? y N quantum wells. Structural and optical properties of the Al x Ga1 ? x N layers in the entire range of compositions (x = 0–1) and nanostructures based on these layers are studied; these studies indicate that there is photoluminescence at room temperature with minimum wavelength of 230 nm. Based on the analysis of the photoluminescence spectra for bulk layers and nanoheterostructures and their temperature dependences, it is concluded that there are localized states in quantum wells. Using the metal-enriched layers grown on the c-Al2O3 substrates, heterostructures for light-emitting diodes with Al x Ga1 ? x N/Al y Ga1 ? y N quantum wells (x = 0.4–0.5, y = x + 0.15) were obtained and demonstrated electroluminescence in the ultraviolet region of the spectrum at the wavelength of 320 nm. 相似文献