On the effect of temperature and the width of the turbulent combustion zone on the ionization detector readings

We have considered the functional dependence of the ionization detector readings (ion current) on the composition of the fuel–air mixture, adiabatic temperature, and the turbulent combustion zone width. Experiments on the engine show that, for an air excess factor of 0.75–1.15, the coincidence of the calculated and experimental data exceeds 90%. Our results can be used to predict and monitor the adiabatic temperature of the flame and the width of the turbulent combustion zone in the combustion changer of the internal combustion engine using the ionization detector.     

Structural and electrical properties of metamorphic nanoheterostructures with a high InAs content (37–100%) grown on GaAs and InP substrates

A complex study of the structural and electrical properties of nanoheterostructures containing a metamorphic barrier with a high InAs content (37–100%) in the active region have been performed by the Van der Pauw and X-ray diffraction methods. All peaks observed in the rocking curves for the samples studied (throughout the entire structure) have been revealed and identified. It is shown that, having properly chosen the design of the metamorphic buffer and the compositional gradient in it, one can obtain mobilities and concentrations of the 2D electron gas in the In _x Ga_1−x As quantum well in the heterostructures formed on GaAs substrates that are comparable with the corresponding values for the nanoheterostructures grown on InP substrates. It is established that the mobility and concentration of 2D electron gas depend both on the metamorphic barrier design and on the structural quality of heterostructure as a whole.     

Structural and electrical properties of quantum wells with nanoscale InAs inserts in InyAl1 ? yAs/InxGa1 ? xAs heterostructures on InP substrates

A complex study of the effect ofintroduction of nanoscale InAs inserts of different thicknesses into an In_0.53Ga_0.47As quantum well on the electrical properties and structural features of In_0.50Al_0.50As/In_0.53Ga_0.47As/In_0.50Al_0.50As nanoheterostructures with bilateral δ-Si doping grown on InP substrates has been performed. The layers of nanoheterostructures with a weak lattice mismatch are found to be equally (cube-on-cube) oriented. The introduction of a nanoscale InAs insert leads to an increase in mobility. At an insert thickness of about 1.8 nm, the effect of increasing mobility is saturated due to structural deterioration. The segregation of the second (apparently, wurtzite) phase is revealed; this process, as well as the formation of other defects in the nanoheterostructure layers, is due to local strains caused by variations of the indium content in the layers.     

Study of the effects of size quantization in coupled AlxGa1? x As/GaAs/Alx Ga1? x as quantum wells by means of photoreflectance spectroscopy

Photoreflectance spectra are measured in heterostructures with coupled quantum wells at room temperature. The energies of the optical transitions are determined, and their variation with the well width and barrier thickness is studied. The experimental results are compared with the theoretically calculated electron-hole transition energies. Good agreement is obtained for narrow wells. __________ Translated from Optika i Spektroskopiya, Vol. 93, No. 6, 2002, pp. 929–934. Original Russian Text Copyright ? 2002 by Avakyants, Bokov, Galiev, Kaminskiĭ, Kul’bachinskiĭ, Mokerov, Chervyakov.     

Electrical and structural characteristics of metamorphic In0.38Al0.62As/In0.37Ga0.63As/In0.38Al0.62As HEMT nanoheterostructures

The influence of the metamorphic buffer design and epitaxial growth conditions on the electrical and structural characteristics of metamorphic In_0.38Al_0.62As/In_0.37Ga_0.63As/In_0.38Al_0.62As high electron mobility transistor (MHEMT) nanoheterostructures has been investigated. The samples were grown on GaAs(100) substrates by molecular beam epitaxy. The active regions of the nanoheterostructures are identical, while the metamorphic buffer In _x Al_{1 ? x} As is formed with a linear or stepwise (by Δ _x = 0.05) increase in the indium content over depth. It is found that MHEMT nanoheterostructures with a step metamorphic buffer have fewer defects and possess higher values of two-dimensional electron gas mobility at T = 77 K. The structures of the active region and metamorphic buffer have been thoroughly studied by transmission electron microscopy. It is shown that the relaxation of metamorphic buffer in the heterostructures under consideration is accompanied by the formation of structural defects of the following types: dislocations, microtwins, stacking faults, and wurtzite phase inclusions several nanometers in size.     

Nanostructure of laser-deposited palladium thin films on different substrates

The morphological features of palladium thin films deposited on different substrates are described. Film deposition has been performed by means of the pulsed laser evaporation method. It is shown that the grain structure of palladium films is formed independently of the substrate roughness. Particular emphasis is placed on the correlation between gas-sensitive metal-insulator-semiconductor (MIS) sensor properties and the nanostructure of palladium films used as metal electrodes in these sensors. It is concluded that a change in the morphology of palladium films has no direct influence on the degradation of the hydrogen sulphide sensitivity of MIS sensors that arises after sensor annealing in air enriched with hydrogen.     

Structural characterization of interfaces in the AlxGa1?xAs/GaAs/AlxGa1?xAs heterostructures by high-resolution X-ray reflectometry and diffractometry

The structural properties of multiplayer Al_xGa_1−x As/GaAs/Al_xGa_1−x As systems (x ≈ 0.2) grown on GaAs(001) substrates are studied by the methods of double-crystal X-ray diffractometry and reflectometry. The depth profiles of deformation, amorphization, and density of the layers are obtained. It is shown that despite small differences (5–7%) in the densities of the Al_xGa_1−x As layers and the substrate and the small thickness of the AlAs layer (1–2 nm) separating the GaAs quantum well, it is possible to reconstruct the heterostructure model by the method of X-ray reflectometry and to determine the thickness of the transitional layers at a resolution of 0.1–0.2 nm. It is also established that the reflectometry data obtained complement the X-ray diffraction data considerably and allow one to estimate the roughness and the character of the aluminum distribution at the interfaces. __________ Translated from Kristallografiya, Vol. 50, No. 5, 2005, pp. 801–812. Original Russian Text Copyright ? 2005 by Lomov, Sutyrin, Prokhorov, Galiev, Khabarov, Chuev, Imamov.     

Epitaxial low-temperature growth of In<Subscript>0.5</Subscript>Ga<Subscript>0.5</Subscript>As films on GaAs(100) and GaAs(111)<Emphasis Type="Italic">A</Emphasis> substrates using a metamorphic buffer

A complex investigation of epitaxial In_0.5Ga_0.5As films grown on GaAs substrates with crystallographic orientations of (100) and (111)A in the standard high- and low-temperature modes has been performed. The parameters of the GaAs substrate and In_0.5Ga_0.5As film were matched using the technology of step-graded metamorphic buffer. The electrical and structural characteristics of the grown samples have been studied by the van der Pauw method, atomic force microscopy, scanning electron microscopy, and transmission/ scanning electron microscopy. The surface morphology is found to correlate with the sample growth temperature and doping with silicon. It is revealed that doping of low-temperature In_0.5Ga_0.5As layers with silicon significantly reduces both the surface roughness and highly improves the structural quality. Pores 50–100 nm in size are found in the low-temperature samples.     

Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well

A complex study of the influence of nanoscale InAs inserts with thicknesses from 1.7 to 3.0 nm introduced into In_0.53Ga_0.47As quantum wells (QWs) on the structural and electrical properties of In_0.52Al_0.48As/In^0.53Ga_0.47As/In_0.52Al_0.48As heterostructures with one-sided δ-Si-doping has been performed. The structural quality of a combined QW was investigated by transmission electron microscopy. A correlation between the electron mobility in QW with the thickness of InAs insert and the technology of its fabrication is established. Specific features of the InP(substrate)/InAlAs(buffer) interface are investigated by transmission electron microscopy and photoluminescence spectroscopy. A relationship between the energy positions of the peak in the photoluminescence spectra in the range of photon energies 1.24 eV < ?ω < 1.38 eV, which is due to the electronic transitions at the InP/InAlAs interface, and the structural features revealed in the interface region is established. It is found that an additional QW is unintentionally formed at the InP/InAlAs interface; the parameters of this QW depend on the heterostructure growth technology.