Effect of exponentially graded base doping on the performance ofGaAs/AlGaAs heterojunction bipolar transistors

The authors have fabricated n-p-n GaAs/AlGaAs heterojunction bipolar transistors (HBTs) with base doping graded exponentially from 5×10¹⁹ cm^-3 at the emitter edge to 5×10¹⁸ cm^-3 at the collector edge. The built-in field due to the exponentially graded doping profile significantly reduces base transit time, despite bandgap narrowing associated with high base doping. Compared to devices with the same base thickness and uniform base doping of 1×10¹⁹ cm^-3 , the cutoff frequency is increased from 22 to 31 GHz and maximum frequency of oscillation is increased from 40 to 58 GHz. Exponentially graded base doping also results ill consistently higher common-emitter current gain than uniform base doping, even though the Gummel number is twice as high and the base resistance is reduced by 40%     

High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping andInGaAs emitter contacts

The authors have developed a modified MBE growth process to produce high-gain n-p-n GaAs-AlGaAs heterojunction bipolar transistors (HBTs) with a mean time to failure (MTTF) of 1.5×10⁸ h at 125°C. Beryllium incorporation and diffusion are controlled through a combination of reduced substrate temperature and increased As/Ga flux ratio during MBE growth, resulting in extremely stable HBT profiles. The authors also demonstrate graded InGaAs surface layers with nonalloyed refractory metal contacts that significantly improve ohmic reliability compared to alloyed AuGe contacts. The ability to produce robust HBTs by MBE is critically important to this technology     

Generation of adaptive gait patterns for quadruped robot with CPG network including motor dynamic model

This paper describes the generation of adaptive gait patterns using new Central Pattern Generators (CPGs) including motor dynamic models for a quadruped robot under various environments. The CPGs act as the flexible oscillators of the joints and adjust joint angles to required values. The CPGs are interconnected with each other and sets of their coupling parameters are adjusted by a genetic algorithm so that the quadruped robot can realize stable and adequate gait patterns. Generation of gait patterns results in the formation of the CPG networks suitable for the formation of not only a straight walking pattern but also of rotating gait patterns. Experimental results demonstrate that the proposed CPG networks are effective for the automatic adjustment of the adaptive gait patterns for the tested quadruped robot under various environments. Furthermore, the target tracking control based on image processing is achieved by combining the general gait patterns. © 2006 Wiley Periodicals, Inc. Electr Eng Jpn, 155(1): 35–43, 2006; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20225     

Phase equilibria of quasi-binary systems consisting of multicomponent polymers 1 and 2. IV: Poly(ethylene oxide)/poly(propylene oxide) systems

To confirm the reliability of the theory of phase equibria of multicomponent polymer 1/multicomponent polymer 2 systems (i.e. quasi-binary systems) and the method of computer experiment based on this theory (Brit. Polym. J., 23 (1990)285; 23 (1990)299; Polym. Int., 29 (1992)219), could point curves (CPC), two-phase volume ratios ( R ) and critical solution points (CSP) have been determined experimentally for the quasi-binary mixtures of poly(ethylene oxide) (M¯_w = 647, M¯_w/M¯_n = 1.15; M¯_w and M¯_n, the weight-average and numberaverage molecular weights, respectively) and poly(propylene oxide) (M¯_w = 2028, M¯_w/M¯_n = 1.08; and M_w = 2987, M_w/M_n = 1.13). The hydroxyl end groups of both polymers were methoxylated in advance by the Cooper & Booth method (Polymer, 18 (1977)164). The thermodynamic interaction parameter between both polymers, χ₁₂, and the concentration dependence parameters for the above quasi-binary systems were determined by the method proposed in a previous paper (Brit. Polym. J., 23 (1990)299). CPC, R and CSP values calculated on the basis of the theory are in good agreement with the values determined experimentally.     

Alpha-particle-induced charge collection in p-n junction diodes insemi-insulating GaAs substrates

The bias and angle dependences of the alpha-particle-induced charge collected by GaAs p-n junction diodes are investigated. These diodes, in which the n-layer overlays the p-layer, are fabricated in a semi-insulating GaAs substrate by Si and Mg ion implantation. ²⁴¹ Am placed in a vacuum is used as an alpha-particle source with an initial energy of 4.03 MeV and a fluence of 5.4×10^-5/s/μm². The results show that the collected charge is nearly independent of the applied bias. This bias independence may be further evidence that the charge funneling process is not important in semi-insulating GaAs. A model not incorporating funneling can explain the measured angular dependence. Based on this model, the design principle for the buried p-layer structure is discussed     

Measurement of self-diffusion coefficients in Li ionic conductors by using the short-lived radiotracer of 8Li

For the effective use of short-lived radioactive beams, soon to be available at the Tokai Radioactive Ion Accelerator Complex, the authors have developed a radiotracer method for diffusion studies in solids. The experimental test was performed by the measurement of the diffusion coefficients of Li in a sample of the compound βLiAl using an α-emitting radiotracer of ⁸Li (T_1/2=0.84 s). It was found that the time-dependent yields of the α particles from the diffusing ⁸Li that was initially implanted in the sample could be used as a measure of the diffusivity of the tracer in a nondestructive way. The method was applied to measure the self-diffusion coefficients of Li in βLiGa, and for investigating how the Li diffusion in the Li ionic conductors is affected by the concentration of atomic defects (i.e., the existence of the atomic vacancies of Li and the defects in Ga sites that are replaced by Li).     

A self-stabilizing ring orientation algorithm with a smaller numberof processor states

A distributed system is said to be self-stabilizing if it will eventually reach a legitimate system state regardless of its initial state. Because of this property, a self-stabilizing system is extremely robust against failures; it tolerates any finite number of transient failures. The ring orientation problem for a ring is the problem of all the processors agreeing on a common ring direction. This paper focuses on the problem of designing a deterministic self-stabilizing ring orientation system with a small number of processor states under the distributed daemon. Because of the impossibility of symmetry breaking, under the distributed daemon, no such systems exist when the number n of processors is even. Provided that n is odd, the best known upper bound on the number of states is 256 in the link-register model, and eight in the state-reading model. We improve the bound down to 6³=216 in the link-register model     

关于太阳放射特性与地球能源的调查与研究

叙述了太阳对地球的放射及能源热收支等关系,同时还对世界各国在化石燃料的开发、配置、使用、价格等关系及人类 在现代建筑中对太阳放射的利用等方面作了一些调查,阐述了它们之间的一些关系。论述了人类在开发太阳能技术方面的重要 性和必要性。     

Martensitic stabilization and defects induced by deformation in TiNi shape memory alloys

Martensitic stabilization caused by deformation in a TiNi shape memory alloy was studied.Special attention was paid to the deformed microstructures to identify the cause of martensitic stabilization.Martensitic stabilization was demonstrated by differential scanning calorimetry for the tensioned TiNi shape memory alloy.Transmission electron microscopy revealed that antiphase boundaries were formed because of the fourfold dissociation of[110]B19'super lattice dislocations and were preserved after reverse transformation due to the lattice correspondence.Martensitic stabilization was attributed to dislocations induced by deformation,which reduced the ordering degree of the microstructure,spoiled the reverse path from martensite to parent phase compared with thermoelastic transformation,and imposed resistance on phase transformation through the stress field.