Low-thermal expansion polycrystalline tantalum tungstate ceramics

The synthesis of thermal-shock-resistant materials from the system Ta₂O₅WO₃ was investigated. Ta₂WO₈ had a very low unit-cell thermal expansion coefficient (+0.5 X 10^–6° C^–1). Ta₃₀W₂O₈₁ also had a relatively low coefficient (+4.0 X 10^–6 ° C^–1) and a thermal durability over 1600° C. The thermal expansion curves of these polycrystalline ceramics were lowered because of microcracks caused by the large thermal expansion anisotropy of the crystal axes and were accompanied by hysteresis loops. The densification of Ta₂WO₈ ceramic was promoted by the addition of some metal oxides, and the strong ceramic of Ta₃₀W₂O₈₁ was obtained by controlling grain growth.     

Preparation of polyimide-epoxy composites

The formation of a three dimensional network of crosslinked epoxy leads all unmodified epoxies to have inherent brittleness and relatively low degradation temperatures. Polyimides, on the other hand, are widely used for applications that require high degrees of flexibility and thermal resistance. Here, we have focused on the preparation of epoxy systems cured with polyamic acids instead of traditional amino-group-containing hardening agents. The cure behavior and potential reaction mechanisms of EPON 828 resin and polyamic acid mixtures were evaluated by DSC and TGA. Thermal analysis showed a complex reaction sequence taking place in the mixture and also determined the extent of reaction of the polyamic acid with itself and the competitive reaction of the polyamic acid with the epoxy. The compositions of the mixtures were varied to see the dependence of the cure behavior on component concentrations. Solutions of the two components did not phase separate and also phase separation was not apparent either optically or microscopically in the cured samples. This phase behavior was attributed to a unique in situ reaction. A novel solvent system for the polyamic acid precursor was also used.     

Graphite formation on Ni film by chemical vapor deposition

Thin film formation of graphite by chemical vapor deposition using 2-methyl-1,2′-naphthyl ketone as a starting material was carried out on Ni film substrates. On Ni films directly deposited on quartz glass, the graphite films were obtained when the Ni film thickness was above 1 000 Å and above 5 000 Å at 700 °C and 1 000 °C, respectively. Depositions on thinner Ni film substrates comprise amorphous carbon (a-C) or graphite tubes which was owing to the thermal coagulation of the Ni film into droplets. On the other hand, graphite film was obtained on the Ni film with thickness 10 Å when a-C was inserted between the Ni film and the quartz glass. The coagulation of the Ni film is considered to be avoided by inserting a-C layer.     

Molecular Simulation Study for CO2 Clathrate Hydrate

The present work has concentrated on the structure of CO₂ hydrate in the NPT ensemble using SPC (simple point charge) intermolecular potential model of water by the Monte Carlo (MC) molecular simulation. A mixture of water and CO₂ placed arbitrarily in a cubic cell has been used as a model system to simulate the CO₂ clathrate hydrate at temperatures ranging from 150–280 K and pressure up to 10 MPa. The result shows that the obtained MC simulation agrees well with the results obtained by molecular dynamic (MD) simulation. The present work is also directed to the study of structure with TIP4P potential model of water.     

A high resolution negative working resist,LMR-UV,for g- and i-line lithography

LMR-UV (“low molecular weight resist for uv lithography”), a naphthoquinone-diazide sulfonic acid ester of a novolak resin, is a negative working resist. The mechanism of insolubilization of LMR-UV is based on the facts that the naphthoquinone-diazide moiety is decomposed to indenecarboxylic acid (polar compound) by photolysis upon UV irradiation and that the irradiated resist film insolubilizes in a non-polar developer. LMR-UV reliably forms 0.6 μm lines and spaces over a reflective substrate with steps by using a g-line stepper having a 0.35 NA lens. 0.6 μm-wide aluminum patterns over topography are obtained by use of g-line exposure and reactive ion etching. By use of an i-line aligner (NA = 0.42), LMR-UV resolves 0.25 μm space patterns with overhang profiles. The profiles are due to the large absorption coefficient of 3.8 μm^?1. 0.3 μm wide aluminum patterns are formed by i-line exposure and lift-off metallization.     

A mesenteric liposarcoma with production of granulocyte colony-stimulating factor

A 77-year-old female was admitted to our hospital because of pyrexia and a right retroperitoneal mass. Leukocytosis and other inflammatory findings were noted. Bone-marrow aspiration revealed hypercellularity with no malignant cells. An additional mass was detected sonographically in the pelvis. The serum concentration of granulocyte colony-stimulating factor (G-CSF) was highly elevated (299 pg/ml). The tumors were removed at laparotomy, and the pelvic mass was found to arise from the ileocecal mesentery. Postoperatively, white blood cell count and serum G-CSF concentrations decreased to normal levels. The mesenteric tumor showed weakly positive immunostaining for human G-CSF, and Northern and polymerase chain reaction (PCR) analyses detected CSF and its mRNA in the mesenteric tumor.     

Properties of Va metal-B films prepared by r.f.-sputtering

Ta_100-x B _x alloy films were prepared by r.f.-sputtering in the chemical composition range 45 x 77. Ta_100-x B _x (45 x 58) films consist of the amorphous phase, while the TaB₂ crystal phase was observed in Ta_100-x B _x (66 x 77) films. A remarkable preferred orientation with the (001) plane of TaB₂ parallel to the film surface was observed in Ta₃₄B₆₆. The d.c. electrical conductivity of Ta_100-x B _x (45 x 77) films decreases with increasing boron content in the range 6.7 × 10³ to 1.3 × 10^3–1 cm^–1. The micro-Vickers hardness of Ta_100-x B _x (45 x 77) films was in the range 2200 to 2600 kg mm^–2.     

Preparation of Co-N films by rf-sputtering

Co-N films in the wide compositional range can be prepared by reactive sputtering. Co-N sputtered films consist of one or two phases, such as CoN, Co₂N, Co₃N, Co₄N and -Co. Co₄N phase with a cubic unit cell is observed, and its lattice constant isa = 0.3586 nm. The preferred orientation is observed on the Co-N films, CoN (200) plane, Co₄N (1 1 1) plane and -Co (002) plane parallel to the film surface, respectively. Saturation magnetization _s of Co-N sputtered film decreases from 160 to 1.7 e.m.u. g^–1 with increasing content of N from 0 to 21.7 at%, and coercive force_I H _c is the range of 43 to 5000e at room temperature.     

Gas chromatographic separation of wax esters based on the degree of unsaturation

The wax esters of sperm whale head oil have been characterized by gas-liquid chromatography on an APOLAR 10C column according to their carbon number and number of double bonds. The novel technique permits the direct quantitative analysis of saturated and unsaturated wax esters.