The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications. 相似文献
The third-order nonlinear optical susceptibilities, X(3), of TeO2-based glasses containing transition metal oxides (M = Sc2O3, TiO2, V2O5, Nb2O5, MoO3, Ta2O5, and WO3) glasses have been measured by the third harmonic generation (THG) method in order to investigate the effect of the empty d-orbital contributions to the third-order nonlinear optical susceptibilities. It is found that the addition of TiO2, Nb2O5, and WO3 to TeO2 glass increases the X(3) value as well as the refractive index, while others decrease both of them. The positive effect of the TiO2, Nb2O5, or WO3, on the X(3) of TeO2 glass was interpreted in terms of the cationic empty d-orbital contribution. There is an almost linear relation between the X(3) and the term (n2ω+ 2)3.(n2ω -1).Ed/E20 containing three measurable parameters only, irrespective of the kinds of MO, which was derived based on the bond orbital theory developed by M. E. Lines. The largest X(3) value obtained is 1.69 × 10−12 esu for 30NbO2.5.70TeO2 glass, about 60 times larger than that of pure fused silica glass. 相似文献
The authors have fabricated n-p-n GaAs/AlGaAs heterojunction bipolar transistors (HBTs) with base doping graded exponentially from 5×1019 cm-3 at the emitter edge to 5×1018 cm-3 at the collector edge. The built-in field due to the exponentially graded doping profile significantly reduces base transit time, despite bandgap narrowing associated with high base doping. Compared to devices with the same base thickness and uniform base doping of 1×1019 cm-3 , the cutoff frequency is increased from 22 to 31 GHz and maximum frequency of oscillation is increased from 40 to 58 GHz. Exponentially graded base doping also results ill consistently higher common-emitter current gain than uniform base doping, even though the Gummel number is twice as high and the base resistance is reduced by 40% 相似文献
The authors have developed a modified MBE growth process to produce high-gain n-p-n GaAs-AlGaAs heterojunction bipolar transistors (HBTs) with a mean time to failure (MTTF) of 1.5×108 h at 125°C. Beryllium incorporation and diffusion are controlled through a combination of reduced substrate temperature and increased As/Ga flux ratio during MBE growth, resulting in extremely stable HBT profiles. The authors also demonstrate graded InGaAs surface layers with nonalloyed refractory metal contacts that significantly improve ohmic reliability compared to alloyed AuGe contacts. The ability to produce robust HBTs by MBE is critically important to this technology 相似文献
Multiple oxide BaTiO3 gel fibres were prepared by the sol-gel method from Ba(OC2H5)2-Ti(O-isoC3H7)4-H2O-C2H5OH-CH3COOH and Ba(CH3COO)2-Ti(O-isoC3H7)4-H2O-CH3COOH solutions. Relatively long gel fibres of 10cm length were obtained from both solutions in the limited composition region. The latter solution in particular showed a spinnability even when it contained no water. Therefore, the occurrence of spinnability of the solution was considered to be due to the formation of linear polymers composed of bridging acetate groups such as TiO-C(CH3)-O-Ti rather than metalloxane bonding as Ti-O-Ti. Addition of water to the solutions seems to break the bridging acetate bonds and replace some of them by bridging oxygen bonds. The as-drawn gel fibres which were X-ray amorphous crystallized into BaTiO3 ceramic fibres of 5mm average length upon heating above 600 ° C. However, the gel fibres drawn from the sols without water became powdery on heating because of the lack of Ti-O-Ti metalloxane bonds. The crystallization behaviour of the BaTiO3 gel fibres is discussed based on the infrared spectroscopy, X-ray diffraction analysis and thermogravimetric-differential thermal analysis. 相似文献
5-Fluorouracil (5-FU) is a cornerstone drug used in the treatment of colorectal cancer (CRC). However, the development of resistance to 5-FU and its analogs remain an unsolved problem in CRC treatment. In this study, we investigated the molecular mechanisms and tumor biological aspects of 5-FU resistance in CRC HCT116 cells. We established an acquired 5-FU-resistant cell line, HCT116RF10. HCT116RF10 cells were cross-resistant to the 5-FU analog, fluorodeoxyuridine. In contrast, HCT116RF10 cells were collaterally sensitive to SN-38 and CDDP compared with the parental HCT16 cells. Whole-exome sequencing revealed that a cluster of genes associated with the 5-FU metabolic pathway were not significantly mutated in HCT116 or HCT116RF10 cells. Interestingly, HCT116RF10 cells were regulated by the function of thymidylate synthase (TS), a 5-FU active metabolite 5-fluorodeoxyuridine monophosphate (FdUMP) inhibiting enzyme. Half of the TS was in an active form, whereas the other half was in an inactive form. This finding indicates that 5-FU-resistant cells exhibited increased TS expression, and the TS enzyme is used to trap FdUMP, resulting in resistance to 5-FU and its analogs. 相似文献
Cu+⇌ R+ (R = Li, Na, and K) ion exchange experiments were conducted for 20R2O·10Al2O3·70SiO2 glasses in molten CuCl at 550°C in air and nitrogen atmospheres. The depth profiles of the copper incorporated into glasses were determined with an electron microprobe X-ray analyzer. The total amount of diffusing copper, M t, strongly depended on the type of alkali ion in the glass and the ion-exchange atmosphere; i.e., M t increased with increasing cationic size in the order Li < Na < K and M t was greater in air than in nitrogen. The Cu ⇌ R+ ion exchange kinetics are discussed in detail. 相似文献
Epilepsy is a neurological disorder that may affect the autonomic nervous system (ANS) from 15 to 20 min before seizure onset, and disturbances of ANS affect R–R intervals (RRI) on an electrocardiogram (ECG). This study aims to develop a machine learning algorithm for predicting focal epileptic seizures by monitoring R–R interval (RRI) data in real time. The developed algorithm adopts a self-attentive autoencoder (SA-AE), which is a neural network for time-series data.
The results of applying the developed seizure prediction algorithm to clinical data demonstrated that it functioned well in most patients; however, false positives (FPs) occurred in specific participants. In a future work, we will investigate the causes of FPs and optimize the developing seizure prediction algorithm to further improve performance using newly added clinical data.