Disaster-readiness of medical facilities in Aichi Prefecture

One month following the Great Hanshin Earthquake of January 17, 1995, we conducted a survey of 173 hospitals in Aichi Prefecture to pinpoint problems related to their actual disaster-readiness and the medical backup systems in place to deal with such disasters. This study revealed that staff at 50% of the surveyed hospitals could reach the hospital within an hour, but that communication is almost entirely dependent on phone lines, suggesting that cordless/portable/mobile phones, radio systems, Internet, communications satellites and the like should be studied in the days to come for possible use as effective communication alternatives in times of disaster. Whereas 92% of the surveyed hospitals had manuals dealing with fire outbreaks, other areas were less well represented. For example, only 36.9% of surveyed hospitals had manuals for earthquakes, 31.7% had manuals for power outages and 14.2% had manuals to deal with flooding and water disasters. New manuals must be developed incorporating the key points garnered from experience (especially Hanshin) and be ready for use immediately. It is the time for each hospital to seriously rethink the measures it should take to deal with disasters.     

The effect of copper on the crystallization of hexagonal boron nitride

The crystallization process of hexagonal boron nitride in the presence of copper has been investigated. The positive effect of copper on the crystallinity of boron nitride was observed in the three studied systems of: nitrided boron, nitrided boron–carbon, and previously prepared turbostratic boron nitride. However, the presence of copper hindered the formation of boron carbonitride and produced graphite and boron nitride phases separately. Poor crystallinity was found as a conditio sine qua non for the existence of such a compound. Well-crystallized boron nitride had a very low spacing parameter 0.3328 nm and a regular hexagonal shape.     

[110]-surface strained-SOI CMOS devices

We have newly developed [110]-surface strained-silicon-on-insulator (SOI) n- and p-MOSFETs on [110]-surface relaxed-SiGe-on-insulator substrates with the Ge content of 25%, fabricated by applying the Ge condensation technique to SiGe layers grown on [110]-surface SOI wafers. We have demonstrated that the electron and the hole mobility enhancement of [110]-surface strained-SOI devices amounts to 23% and 50%, respectively, against the mobilities of [110]-surface unstrained MOSFETs. As a result, the electron and the hole mobility ratios of [110]-surface strained-SOI MOSFETs to the universal mobility of (100)-surface bulk-MOSFETs increase up to 81% and 203%, respectively. Therefore, the current drive imbalance between n- and p-MOS can be reduced. Moreover, both the electron and the hole mobilities of the [110]-surface strained-SOIs strongly depend on the drain current flow direction, which is qualitatively explained by the anisotropic effective mass characteristics of the carriers on a [110]-surface Si. As a result, the [110]-surface strained-SOI technology with optimization of the current flow directions of n- and p-MOS is promising for realizing higher speed scaled CMOS.     

Time-dependent deformation in an enhanced SiC/SiC composite

Time-dependent deformation in an enhanced SiC/SiC composite has been studied under constant load at high temperatures of 1200 °C, 1300 °C, and 1400 °C. Creep damage evolution was evaluated by a Young’s-modulus change of partial unloading and microscopic observation. The addition of the glassy phase in the matrix is very effective for protecting the composite from oxidation. The transient creep is dominant in creep life at all the temperatures. An empirical equation is proposed to describe creep behavior of the composite. It is found that creep activation energy increases with creep time at stresses lower than matrix cracking stress, but the activation energy remains constant at stresses higher than the matrix cracking stress. The creep strain rate of the composite is considered to be controlled by creep of fibers based on examining the time, strain, stress, and temperature dependencies of creep strain rates.     

An all-digital analog-to-digital converter with 12-/spl mu/V/LSB using moving-average filtering

A compact, high-resolution analog-to-digital converter (ADC) especially for sensors is presented. The basic structure is a completely digital circuit including a ring-delay-line with delay units (DUs), along with a frequency counter, latch, and encoder. The operating principles are: (1) the delay time of the DU is modulated by the analog-to-digital (A/D) conversion voltage and (2) the delay pulse passes through a number of DUs within a sampling (= integration) time and the number of DUs through which the delay pulse passes is output as conversion data. Compact size and high resolution were realized with an ADC having a circuit area of 0.45 mm/sup 2/ (0.8-/spl mu/m CMOS) and a resolution of 12 /spl mu/V (10 kS/s). Its nonlinearity is /spl plusmn/0.1% FS per 200-mV span (1.8-2.0 V), for 14-b resolution. Sample holds are unnecessary and a low-pass filter function removes high-frequency noise simultaneously with A/D conversion. Thus, the combination of this ADC and a digital filter that follows can eliminate an analog prefilter to prevent the aliasing before A/D conversion. Also, both this ADC can be shrunk and operated at low voltages, so it is an ideal means to lower the cost and power consumption. Drift errors can be easily compensated for by digital processing.     

Simultaneous fabrication of a composite with low thermal expansion and high strength in the eucryptite — yttria-stabilized PSZ system

Low thermal expansion coefficient and high mechanical strength have been attained simultaneously in a composite with microstructures in which the low thermal expansion grains are surrounded by a continuous texture of the grains with high strength. Alloying eucryptite with yttria-stabilized PSZ (partially stabilized zirconia) simultaneously achieved the low thermal expansion coefficient, 1.45 × 10^–6, and the high bending strength, 220 MPa, by adjusting the composition and controlling the microstructures by changing the starting powders and the milling durations. Grain size and reactions between the coupled materials determined the critical processing conditions.     

Optimization of a schottky barrier mixer diode in the submillimeter wave region

We have designed a mixer Schottky barrier diode (SBD) for use in the submillimeter wave region with a structure optimized for minimum noise temperature. The dependence of mixer noise temperature upon thickness and doping density of the epitaxial layer and diode diameter of SBDs was simulated within the framework of existing theories. Special care was taken to formulate the SBD current-voltage and capacitance-voltage relations in a way that correctly describes the behavior of real SBDs.     

The rotational angle in osteoarthritic knees

The desire to work is deeply rooted in the human psyche and involves both intrinsic and extrinsic factors. If this is indeed the case, then this form of human activity should be considered to be an important element of our lives and therefore worthy of intervention when circumstances restrict an individual's engagement with it. To investigate the therapeutic nature of work for people with enduring mental health problems, the author conducted a pilot case study of a work rehabilitation scheme in the United Kingdom. The main theme to emerge from the study was that of purposeful activity.     

Strongyloidiasis associated with nephrotic syndrome

We report a nephrotic syndrome patient with eosinophilia who developed ileus, epigastralgia and malabsorption due to strongyloidiasis which became symptomatic by steroid therapy. The patient was then treated with thiabendazole and recovered. A percutaneous renal biopsy revealed minimal change nephrotic syndrome. This renal injury may be brought on by severe infection of Strongyloides stercoralis. It is important to rule out strongyloidiasis prior to corticosteroid therapy to patients from eosinophilia endemic areas.     

Catalytic dehydrogenative coupling of methane on active carbon. Effect of metal supported on active carbon

Ethane, ethene, ethyne and hydrogen are obtained in good yields via dehydrogenative coupling of methane in the presence of active carbon as a catalyst. The product yield is increased by supporting metal on active carbon.