Flux Jumps and H-T Diagram of Instability for MgB2

We present a study of magneto-thermal instabilities in polycrystalline MgB₂ superconductor, by magnetic hysteresis loop measurements and by investigations of magnetic flux dynamics with a miniature Hall probe. Temperature and magnetic field ranges where the flux jumps may be observed have been determined. On the basis of measurements of the magnetic flux dynamics, an average magnetic diffusivity describing the process of the flux jump is estimated. This parameter is compared with the thermal and magnetic diffusivities calculated on the basis of available data for thermal conductivity, heat capacity and resistivity. It is shown that the estimated value of the field of the first flux jump is influenced significantly by the field dependence of specific heat. In order to explain the observed phenomenon, the temperature reached by the sample during the flux jump at different magnetic fields is calculated.     

Calculated and Experimental Estimation of Absorbed Mechanical Work in Deformation of Synthetic Fibres

Methods are proposed for obtaining the elastic and absorbed components of deformation and mechanical work expended in the region of a nondestructive mechanical effect from the stress-strain diagrams or by calculated prediction. The closeness of the values of the absorbed and correspondingly the elastic components obtained with the measured or predicted stress-strain diagram totally confirm the satisfactory reliability of modeling the physicomechanical properties of a fibre in the form of an integral equation in which the nonlinear-hereditary kernel analytically reflects the activating character of the mechanical effect combined with the concept of the deformation-time analogy in normalized form [5].     

Operation of an experimental facility for fabrication of fuel elements and fuel assemblies of the bor-60 containing vibrocompacted fuel

Translated from Atomnaya Énergiya, Vol. 67, No. 5, pp. 320–323, November, 1989.     

A quadruple well, quadruple polysilicon BiCMOS process for fast 16Mb SRAM's

An advanced, high-performance, quadruple well, quadruple polysilicon BiCMOS technology has been developed for fast 16 Mb SRAM's. A split word-line bitcell architecture, using four levels of polysilicon and two self-aligned contacts, achieves a cell area of 8.61 μm² with conventional I-line lithography and 7.32 μm² with I-line plus phase-shift or with deep UV lithography. The process features PELOX isolation to provide a 1.0 μm active pitch, MOSFET transistors designed for a 0.80 μm gate poly pitch, a double polysilicon bipolar transistor with aggressively scaled parasitics, and a thin-film polysilicon transistor to enhance bitcell stability. A quadruple-well structure improves soft error rate (SER) and allows simultaneous optimization of MOSFET and bipolar performance     

Magnetic-Field-Controlled 1D Photonic Crystal Based on a Periodic Bigyrotropic Structure

A theoretical study is reported of the magnetic-field-controlled optical transmission through a stack of identical bilayers in which one layer is bigyrotropic and the other is nonmagnetic and isotropic. An analytical expression for the complex transmittance is derived. The transmittance–wavelength characteristic is examined for different magnetizations and for fixed materials parameters and total number of bilayers. The magnetization dependence of the position, height, and width of the center peak is investigated. The effect is calculated of magnetization on the ellipticity of transmitted light and the angle of optical rotation.     

Use of a mathematical model in predicting the density of glass for controlling a tank furnace

Translated from Steklo i Keramika, No. 1, pp. 11–12, January, 1992.     

Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode

The effect of the growth temperature on the density, lateral size, and height of InAs-GaAs quantum dots (QD) has been studied by transmission electron microscopy. With the growth temperature increasing from 450 to 520°C, the density and height of QDs decrease, whereas their lateral size increases; i.e., the QDs are flattened. The blue shift of the photoluminescence line indicates decreasing QD volume. The observed behavior is in agreement with the thermodynamic model of QD formation. The effect of lowering the substrate temperature immediately after the formation of QDs on the QD parameters has been studied. On lowering the temperature, the lateral size of QDs decreases and their density increases; i.e., the parameters of QD arrays tend to acquire the equilibrium parameters corresponding at the temperature to which the cooling is done. The QD height rapidly increases with cooling and may exceed the equilibrium value for a finite time of cooling, which enables fabrication of QD arrays with a prescribed ratio between height and lateral size by choosing the time of cooling.