In this paper, Pd modified WO3 thin film methanol sensor has been developed by sol–gel method. WCl6 chemical compound is used as a precursor. Spin coating method is employed for the preparation of the WO3 thin film on the Si substrate. The crystalline structure of the WO3 thin film is analyzed by scanning electron microscopy and X-ray diffraction techniques. The thin film sensor is fabricated at different annealing temperatures (400, 600 and 800 °C). The response magnitude of the WO3 thin film is studied at different operating temperatures (100–300 °C). It is observed that the operating temperature of Pd modified thin film sensor is 200 °C. It is also noticed that the maximum response magnitude of Pd modified WO3 thin film sensor is found at the annealing temperature of 600 °C. It is found that Pd modified WO3 thin film sensor are suitable for methanol vapour detection compare to unmodified WO3 thin film senor.
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