Extensions of polyacrylic acid ammonium salts in the adsorption layer to fluidize alumina slurries

An average shell volume occupied in the adsorption layer on alumina by a polyacrylic acid ammonium salts molecule (PAA) defined as the average area occupied by an adsorbed PAA on alumina multiplied by the average thickness of the water layer at the limit of thickening, has been calculated from the adsorbed amount of PAA and from the flow points of alumina in the presence of PAA of different molecular weights. A steric effect of the PAA dispersant on the dispersion of alumina resulted in a flow with no yield stress. This was due to the change of the extension of PAA in the adsorption shell from a sphere to an ellipsoid with a long axis which exceeded the effective distance that the van der Waals attraction force reaches at a molecular weight for the PAA of between 10 000–20 000.     

Effect of Forming Pressure on the Internal Structure of Alumina Green Bodies Examined with Immersion Liquid Technique

Green bodies prepared by compaction of alumina granules were made transparent by an immersion liquid technique, and the internal structure was characterized with an optical microscope to study the effect of forming pressure on the internal structure. Clear images obtained by the technique provide more detailed information than other existing methods for structures ranging from one to tens of micrometers. Intergranular pores were present between unfractured granules. Their sizes and concentration tended to decrease with increasing forming pressure. However, pores were clearly present even in the green body prepared at 600 MPa. A rod- and needlelike feature was also found and was concluded to correspond to a high-density region. The significance of large pores and high-density regions on processing as well as the details of the technique is discussed.     

Infrared sensing properties of positive temperature coefficient thermistors with large temperature coefficients of resistivity

Infrared (IR) detecting elements were prepared using positive temperature coefficient (PTC) thermistors with large temperature coefficients of resistivity (α). Their compositions were denoted as Ba_1−x Sr _x Nb_0.003Ti_0.997O₃ + 1 mol % TiO₂ + 0.07 mol %MnO (x=0, 0.2), and their temperature coefficients of resistivity were 78 and 50% K⁻¹, respectively. Their IR sensing properties were measured under the self-regulating heating conditions, and were compared with those of a detector with small α (18 % K⁻¹). It was shown that large α was effective for controlling the element temperature by self-regulating heating and for improving sensitivity. The responsivity,R _v of the element withx=0.2 was 980 VW⁻¹, and was as large as those of pyroelectric detectors. Expressions which normalize the sensitivity and the thermal time constant were derived. From these expressions, criteria for improving some IR sensing properties were obtained.     

Dependence of thin film transistor characteristics on thedeposition conditions of silicon nitride and amorphous silicon

The systematic relation between thin film transistors' (TFT's) characteristics and the deposition conditions of amorphous silicon nitride (a-SiN) films and hydrogenated amorphous silicon (a-Si:H) films is investigated. It is observed that field effect mobility μ_FE and threshold voltage V_th of the TFT's strongly depend on the deposition conditions of these films. The maximum μ_FE of 0.88 cm²/V·s is obtained for the TFT of which a-SiN film is deposited at a pressure of 85 Pa. This phenomenon is due to the variation of the interface states density between a-Si:H film and a-SiN film     

Surface Hardening of Carbon Steel Using High Powered YAG Laser

A high powered YAG laser with kaleidoscope for surface modification was applied to the surface hardening of carbon steels containing 0. 18-0.54 wt% C without the absorbents, and the relationships between laser processing and surface hardening were investigated by hardness and microstructure. The structure of the hardened zone underwent complete martensitic transformation in all of the carbon steels tested, and its hardness increased with greater carbon content. Under identical irradiated conditions, the hardened zone expanded with increasing carbon content. A hardened zone extending from the surface to a depth of 1.0 mm was obtained at a laser power of 1.0 kW and a scanning speed of 1 mm/sec. It was found that in the surface hardening of carbon steels, a high powered YAG laser can be used to control the hardened zone by selecting the appropriate irradiation conditions, however, the hardened zone was affected by the assistant gas and the flow rate.     

Low-cycle fatigue behavior of Sn-Ag, Sn-Ag-Cu, and Sn-Ag-Cu-Bi lead-free solders

Low-cycle fatigue (LCF) tests on as-cast Sn-3.5Ag, Sn-3Ag-0.5Cu, Sn-3Ag-0.5Cu-1Bi, and Sn-3Ag-0.5Cu-3Bi solders was carried out using a noncontact strain-controlled system at 20°C with a constant frequency of 0.1 Hz. The addition of Cu does not significantly affect the fatigue life of eutectic Sn-Ag solder. However, the fatigue life was significantly reduced with the addition of Bi. The LCF behavior of all solders followed the Coffin-Manson relationship. The fatigue life of the present solders is dominated by the fracture ductility and can be described by the ductility-modified Coffin-Manson’s relationship. Steps at the boundaries of dendrite phases were the initiation sites for microcracks for Sn-3.5Ag, Sn-3Ag-0.5Cu, and Sn-3Ag-0.5Cu-1Bi solders, while for Sn-3Ag-0.5Cu-3Bi solder, cracks initiated along both the dendrite boundaries and subgrain boundaries in the dendrite phases. The linking of these cracks and the propagation of cracks inside the specimen occurred both transgranularly through eutectic phases and intergranularly along dendrite boundaries or subgrain boundaries.     

TiAl金属间化合物中（Al,Ag）3Ti,Ti3AlC的析出形态

用透射电镜观察了在不同温度，不同时间时效时Ｌｌ０－ＴｉＡｌ金属间化合物中形成的Ｌｌ２－（Ａｌ，Ａｇ０３Ｔｉ，Ｔｉ３ＡｌＣ析出相的形态以及与基体之间的位向关系，讨论了析出相的形态与ＴｉＡｌ基体间的错配度的关系。     

Properties of aqueous solutions of several salts of α,ω-alkanediol disulfates

Several salts of α,ω-sulfates, MO₃SO(CH₂)_n OSO₃M(n=12, 14, 16, 18, and M=Li, Na, and K) were prepared from the corresponding α,ω-alkane diols. The Krafft points of these α,ω-sulfates with common counterion as estimated by electroconductivity measurements increased with the increase of the hydrocarbon chain length, and the effect of the counterions on the Krafft points of the α,ω-sulfates with the same hydrocarbon chain length was in the order : Li<Na<K. Solutions of the α,ω-sulfates, except disodium dodecanediol disulfate, showed two break points corresponding to the first and second critical micelle concentration in each plot of the electroconductivity as a function of the concentration. The existence of the second break point suggested that another aggregation of rearrangement of the existing aggregates occurs in α,ω-sulfate solutions in addition to the usual micelle formation. The first and second break points of α,ω-sulfates with sodium counterion decreased logarithmically with increasing total number of methylene groups. The relationships were given as follows: log(first break point)=−0.138Nc−0.095; log(second break point)=−0.104Nc−0.251. The effect of the counterions upon the break points of α,ω-sulfates with the same hydrocarbon chain length was in accordance with their positions in the lyotropic series.     

Fast computation of computer-generated hologram using Xeon Phi coprocessor

We report fast computation of computer-generated holograms (CGHs) using Xeon Phi coprocessors, which have massively x86-based processors on one chip, recently released by Intel. CGHs can generate arbitrary light wavefronts, and therefore, are promising technology for many applications: for example, three-dimensional displays, diffractive optical elements, and the generation of arbitrary beams. CGHs incur enormous computational cost. In this paper, we describe the implementations of several CGH generating algorithms on the Xeon Phi, and the comparisons in terms of the performance and the ease of programming between the Xeon Phi, a CPU and graphics processing unit (GPU).