Feasibility analysis of membrane reactors – discovery of reactive arheotropes

A feasibility analysis methodology adopted from reactive distillation is applied to membrane reactors. A model is formulated to depict the reactive liquid phase composition on the retentate side of a continuous type membrane reactor. The effects of both the chemical reaction kinetics and the membrane mass transfer kinetics on the feasible products are elucidated by means of retentate phase diagrams and bifurcation analysis. The proposed method can be applied to various membrane processes, independent of the specific structure of the membrane. Two quaternary reaction systems are considered to illustrate the methodology. In the first hypothetical system, it is shown how selective membranes can influence the sequence of effective volatilities which in turn affects the feasible products of the system. In the second example of practical importance, i.e. the heterogeneously catalysed synthesis of propyl acetate coupled with permeation through a porous polycarbonate membrane, the dusty gas model is applied to describe the component fluxes through the membrane. For the latter reaction system, the existence of reactive arheotrope is demonstrated. Arheotropes represent mass transfer controlled feasible products of membrane separation process.     

3D Hair sketching for real-time dynamic & key frame animations

Physically based simulation of human hair is a well studied and well known problem. But the “pure” physically based representation of hair (and other animation elements) is not the only concern of the animators, who want to “control” the creation and animation phases of the content. This paper describes a sketch-based tool, with which a user can both create hair models with different styling parameters and produce animations of these created hair models using physically and key frame-based techniques. The model creation and animation production tasks are all performed with direct manipulation techniques in real-time.     

Die zweite Phase der Feldbusentwicklung

The past decade may be regarded as the phase of the fundamental developments in fieldbus systems that were based on the OSI model. Today we are entering a second stage. It is the objective of this issue to present the current state and where the further developments will lead to. This introductory article is intended to give an overview on the subject.     

Auswirkungen von Blitzschlägen auf 20-kV-Energiekabel

Recently appeared defects on high voltage cables have required an urgent evaluation of the impact of lightning strikes necessary. In some cases overvoltages between the copper wire screen of the cable and earth may appear which cause damages of the cablesheath. Field measurements with a classification of the voltage impulses at the copper wire screen have been made to evaluate the number of events. Additionally a numerical model was developed to study the effects of atmospheric discharges on underground cables with emphasis to the influence on the cablesheath. This numeric method was also applied to estimate the effectiveness of different protection arrangements. This contribution presents evaluation methods for overvoltages of cables and a model used firstly for calculating the stress caused by differential voltages and secondly to determinate the influence of protection measures.     

Buchbesprechungen

Ohne Zusammenfassung     

38. Generalversammlung von CENELEC

Ohne Zusammenfassung     

Qualitativ-quantitative Simulation, ein Instrument zur Analyse nichtlinearer Regelkreise

Qualitative-quantitative simulation is one of the most productive and promising research areas in Artificial Intelligence to emerge in recent years. This method provides an elegant way for an exhaustive analysis of uncertain dynamic systems. The application of the qualitative-quantitative simulation is shown in this paper. The important question about the stability of a quanlitatively described dynamical system is solved by a novel analytic method.     

Damage and strain in pseudomorphic vs relaxed GexSi1−x layers on Si(100) generated by Si ion irradiation

We compare both the strain and damage that 100 keV Si irradiation at room temperature introduces in pseudomorphic and relaxed Ge_xSi_1−x films grown on Si(100) substrates. The ion range is such that the Si/Ge_xSi_1−x interface is not significantly damaged. The amount of damage produced in pseudomorphic and relaxed Ge_xSi_1−x layers of similar x for irradiation doses up to 2.5 × 10¹⁴ Si/cm² is the same, which proves that a pre-existing uniform strain does not noticeably affect the irradiation-induced damage. However, the irradiation-induced strain does depend on the pre-existing strain of the samples. Possible interpretations are discussed. On leave from Inst. voor Kern en Stralingsfysika, Catholic University of Leuven, Belgium.