Bayes估计的进一步研究及其Pitman最优性

对线性模型参数,讨论了Bayes估计的Pitman最优性,将已有结果进行了改进,去掉了附加条件,证明了在Pitman准则下,Bayes估计一致优于最小二乘估计(LSE),在此基础上,提出了一种基于先验信息的方差分量估计,通过和基于LSE的方差分量估计作比较,证明了新估计是无偏估计且有更小的均方误差．最后,证明了在Pitman准则下生长曲线模型参数的Bayes估计优于最佳线性无偏估计．     

旋转锥镜相机研测动态曲率和斜率

采用旋转锥镜相机，进行激光散斑剪切照相，研测缓慢变形物体的动态曲率和斜率。拍摄一张散斑图即可获得曲率和斜率动态变化的全过程。     

残余奥氏体含量对马氏体高强钢滑动磨损性能的影响

对3种不同残奥(RA)含量的马氏体高强钢进行干滑动摩擦磨损试验, 研究RA含量对其磨损性能的影响. 利用扫描电镜、透射电镜、X射线衍射仪等对试验后的磨损表面及横截面显微组织进行表征. 结果表明, RA含量越高, 磨损表面越光滑, 摩擦系数和磨损率越小, 也即马氏体高强钢的耐磨性越好. 磨损引起的大应变使RA发生应变诱导马氏体相变, 导致硬度和硬化层厚度显著增大. RA含量最高的HT3试样的硬度提高了18.3%, 硬化层厚度达70μm. 相比RA含量低的试样, HT3试样表现出很好的耐磨性. 这是因为马氏体相变使硬度逐步增加, 抗裂纹萌生能力提高; 同时由于亚表面良好的韧性, 可延缓和阻止裂纹扩展, 使得点蚀和剥落不易形成. 因此, 要提高马氏体高强钢的耐磨性, 除了硬度要求外, 还需要考虑其亚表面韧性.     

车轮多边形激励下高速列车制动界面摩擦学行为分析

高速列车车轮多边形磨耗是一种沿车轮周向的不均匀磨耗,是列车服役过程中常见的车轮失效现象,其产生的剧烈轮轨激励严重威胁车辆系统服役可靠性.制动系统作为保障高速列车服役安全的核心部件,其界面摩擦学行为直接受到轮轨激励的影响.为探究车轮多边形激励下的制动界面摩擦学行为,建立了刚柔耦合车辆动力学模型和制动系统热机耦合有限元模型,并分别通过线路试验和台架试验验证了模型的正确性.然后,提出一种考虑车轮多边形激励的制动界面摩擦学行为分析方法,能够真实地反映服役过程中制动界面摩擦学行为.基于此,研究了不同车辆运行速度下车轮多边形激励对制动系统动态接触、温度以及振动特性的影响规律.结果表明：车轮多边形磨耗导致系统接触面积、摩擦热、接触应力和振动等摩擦学行为更为复杂且剧烈.此外,系统接触面积标准差和振动加速度均方根值随速度的增加而增大.因此,车轮多边形磨耗对制动界面摩擦学行为具有不可忽略的影响.该研究成果可为制动系统界面摩擦学行为研究及结构优化设计提供有效方法与工程指导.     

微波辐射条件下季戊四醇双缩醛和双缩酮化合物的合成

微波辐射硫酸锆-硅胶催化季戊四醇与醛、酮缩合反应,高收率制得了双缩醛和双缩酮化合物.该方法操作简便,收率高,催化剂可重复使用,是一种环境友好型催化反应.     

Linear polarization conversion of transmitted terahertz wave with double-layer meta-grating surfaces

In this Letter, we demonstrate a linear polarization conversion of transmitted terahertz wave with double-layer meta-grating surfaces, which integrated the frequency selectivity of a split ring resonator metasurface and the polarization selectivity of a metallic grating surface. Since the double-layer can reduce the loss, and the Fabry–Perot like resonant effect between the two layers can improve the conversion efficiency, this converter can rotate the incident y-polarized terahertz wave into an x-polarized transmitted wave with relatively low loss and high efficiency. Experimental results show that an average conversion efficiency exceeding 75% from 0.25 to 0.65 THz with the highest efficiency of 90% at 0.43 THz with only-2 dB loss has been achieved.     

Stable Electron Field Emission from CeO2 Nanowires by Hydrothermal Method

CeO2 nanowires are successful synthesized by hydrothermal method and their field emission （FE） properties are investigated. The turn-on electric field is 5.8 V/μm at an emitter-anode spacing of 700μm. The FE current is stable and the current fluctuations are less than 3% over 5 h. All the plotted Fowler-Nordheim curves yield straight lines, which are in agreement with the Fowler-Nordheim theory. The relationship between the field enhancement factor β and the emitter-anode spacing d follows a universal equation. Our results imply that the CeO2 nanowires are promising materials for fabricating FE cathodes.     

时滞变质品供应链的数量折扣协调模型

在由单个批发商与单个零售商组成的两级时滞变质品供应链中,分别建立分散决策和集中决策下供应链系统的单位时间利润函数,通过比较得到集中决策优于分散决策的条件。引入数量折扣契约对时滞变质品供应链进行协调,促使整个供应链系统实现集中决策下的最优状态。设计收益共享合同来合理分配协调后的利润增量,保证批发商和零售商的单位时间利润都比协调前有所增加,从而实现供应链系统的帕累托改善。最后,通过数值算例演示了两种决策模式的单位时间利润情况,并分析了关键参数对供应链系统及各成员企业单位时间利润水平的影响。     

Silicon-based optoelectronic heterogeneous integration for optical interconnection

The performance of optical interconnection has improved dramatically in recent years. Silicon-based optoelectronic heterogeneous integration is the key enabler to achieve high performance optical interconnection, which not only provides the optical gain which is absent from native Si substrates and enables complete photonic functionalities on chip, but also improves the system performance through advanced heterogeneous integrated packaging. This paper reviews recent progress of silicon-based opt...     

An Efficiency Enhanced Graphene/n-Si Schottky Junction for Solar Cells

A novel and facile oxidation-induced self-doping process of graphene-silicon Schottky junction by nitric acid(HNO_3) vapor is reported. The HNO_3 oxidation process makes graphene p-type self-doped, and leads to a higher built-in potential and conductivity to enhance charge transfer and to suppress charge carrier recombination at the graphene-silicon Schottky junction. After the HNO_3 oxidation process, the open-circuit voltage is increased from the initial value of 0.36 V to the maximum value of 0.47 V, the short-circuit current is greatly increased from 0.80μA to 7.71μA, and the ideality factor is optimized from 4.4 to 1.0. The enhancement of the performance of graphene-Si solar cells may be due to oxidation-induced p-type self-doping of graphene-Si junctions.