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A novel partial silicon-on-insulator laterally double-diffused metal-oxide-semiconductor transistor (PSOI LDMOS) with a thin buried oxide layer is proposed in this paper. The key structure feature of the device is an n+-layer, which is partially buried on the bottom interface of the top silicon layer (PBNL PSOI LDMOS). The undepleted interface n+-layer leads to plenty of positive charges accumulated on the interface, which will modulate the distributions of the lateral and vertical electric fields for the device, resulting in a high breakdown voltage (BV). With the same thickness values of the top silicon layer (10 p.m) and buried oxide layer (0.375 μm), the BV of the PBNL PSOI LDMOS increases to 432 V from 285 V of the conventional PSOI LDMOS, which is improved by 51.6%. 相似文献
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聚乳酸(PLA)类材料以其独特的生物相容性和生物可降解性备受关注。将其两种旋光对映体,即PLLA与PDLA共混,会产生一种具有更高熔点的立体复合物(sc-PLA),并能提高聚合物的结晶度、结晶速率以及耐热性,对于PLA类材料的开发和应用具有重要意义。本文从结晶机理、球晶形态、热稳定性和降解性能等方面综述了近年来有关sc-PLA结构与性能的研究进展,并对sc-PLA研究方向提出了作者的观点。 相似文献
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