铝热反应法制备双股类螺旋Zn2SnO4单晶纳米带

This paper reports the preparation in large quantity of bifilar helix-like nanobelts of single crystal ine Zn2SnO4, a face-centered cubic spinel and transparent semiconductor that possesses wide applications in photovoltaic devices and sensors for humidity and combustible gases, by using a unique approach that combines chemical vapor deposition, aluminothermal reaction, vapor-liquid-solid growth, mergence of polar planes, and kinetic control by steady-state turbulent flow. The bifilar helix-like nanobelt was formed by the twisting and merging of two independent Zn2SnO4 nanobelts, as analyzed by scanning electron microscopy, transmission electron microscopy, electron diffraction, X-ray diffraction, Raman spectroscopy, and photoluminescence. It had a periodicity along the axial direction and hence, is actual y a super-lattice material. The photoluminescence measurements showed a strong light emission at 326.1 nm from the as-prepared sample with a line width of about 1.5 nm. The combined approach used in this study, in particular its aluminothermal reaction and steady-state turbulent gas flow perturbation steps, may be helpful in preparing other similar materials.     

铝热反应法制备双股类螺旋Zn2SnO4单晶纳米带

综合利用化学气相沉积、铝热反应法、汽-液-固生长法、极性面融合和稳态湍流动力学控制来大量制备双股类螺旋Zn₂SnO₄单晶纳米带. 该材料属于面心立方尖晶石型透明半导体, 在光伏器件和湿度与可燃气体传感器中有着广泛的应用. 扫描电镜、透射电镜、电子衍射、X射线衍射、拉曼光谱以及光发射等技术分析表明所得的双股类螺旋纳米带是由两个独立的Zn₂SnO₄纳米带通过扭曲纠缠和融合而成. 该双股类螺旋纳米带实际上是在轴向具有周期性的超晶格材料. 光致发光测量表明该纳米带在326.1 nm处出现强发射峰, 线宽约为1.5nm. 本研究所采用的综合制备法中的铝热反应法和稳态湍流微扰法可能有助于类似材料的控制制备.     

结构化学小班讨论介绍——态叠加原理

简要介绍了结构小班讨论课中关于主题文献"态叠加原理"的讨论情况及讨论过程中需要注意的问题。     

固态van der Waals C60膜晶格的Coulomb膨胀

利用扫描隧道显微镜观测到生长在GaAs(001)2×4表面上的固态van der Waals C60膜在室温下较之C60晶体具有13%的晶格膨胀.这种膨胀是由从GaAs衬底饱和的As悬挂键上转移到C60分子上的电荷之间的Coulomb作用引起的.理论计算表明,平均约有1.76个电子转移到每个C60分子上.有趣的是,该固态C60膜为(110)取向,这明显不同于生长于其他半导体或金属表面上的具有(111)取向的六角密排C60膜.这种反常取向的薄膜是由GaAs衬底的各向异性产生的一维限制作用导致的.通过选择不同的衬底,可以控制C60薄膜的晶体生长.