排序方式: 共有98条查询结果,搜索用时 15 毫秒
1.
Kovsh D.I. Li Liu Bakhshi B. Pilipetskii A.N. Golovchenko E.A. Bergano N.S. 《IEEE journal of selected topics in quantum electronics》2002,8(3):597-602
Nonlinear interaction between signal channels may result in significant performance degradation in transoceanic dense wavelength-division-multiplexing (WDM) transmission systems operated at high bit rates. In this paper, we report that the nonlinear crosstalk for systems with high spectral efficiency can be suppressed if WDM channels are launched with orthogonal relative states of polarization. It is shown that for adjacent channels (that experience the strongest nonlinear interaction) the launched relative state of polarization is maintained over the large distance of low polarization-mode dispersion fiber typically used in undersea systems. Numerical studies, as well as experimental results, are presented for standard and dispersion slope-matched dispersion maps 相似文献
2.
Gubenko A. Krestnikov I. Livshtis D. Mikhrin S. Kovsh A. West L. Bornholdt C. Grote N. Zhukov A. 《Electronics letters》2007,43(25):1430-1431
A comb-generating laser suitable for DWDM application is demonstrated on the basis of a multimode quantum-dot laser. Bit error rate < 10-13 at 10 Gbit/s external modulation was measured for 10 longitudinal modes owing to low (<0.3% over 0.001-10 GHz) relative intensity noise of each individual mode. 相似文献
3.
Yu. M. Shernyakov A. Yu. Egorov B. V. Volovik A. E. Zhukov A. R. Kovsh A. V. Lunev N. N. Ledentsov M. V. Maksimov A. V. Sakharov V. M. Ustinov Zhen Zhao P. S. Kop’ev Zh. I. Alferov D. Bimberg 《Technical Physics Letters》1998,24(5):351-353
Continuous-wave lasing has been demonstrated in a vertically coupled quantum-dot laser with a high output power (1.5 W) at
room temperature. It was shown that anisotropy of the quantum dot profile leads to anisotropy of the laser operating characteristics.
Pis’ma Zh. Tekh. Fiz. 24, 50–55 (May 12, 1998) 相似文献
4.
Cataluna M.A. Rafailov E.U. McRobbie A.D. Sibbett W. Livshits D.A. Kovsh A.R. 《Photonics Technology Letters, IEEE》2006,18(14):1500-1502
We demonstrate the mode-locked operation of a two-section quantum-dot laser in a broad temperature range. Stable mode-locking was observed at temperatures ranging from 20 /spl deg/C to 70 /spl deg/C, with signal-to-noise ratios well over 20 dB and a -3-dB linewidth smaller than 80 kHz. In the temperature range between 70 /spl deg/C and 80 /spl deg/C, the mode-locking was less stable. It was found that in order to provide stable mode-locked operation with increasing temperature, the reverse bias on the absorber section must be reduced accordingly. 相似文献
5.
Rossetti M. Lianhe Li Markus A. Fiore A. Occhi L. Velez C. Mikhrin S. Krestnikov I. Kovsh A. 《Quantum Electronics, IEEE Journal of》2007,43(8):676-686
High-power broadband superluminescent diodes (SLDs) emitting in the 1.2-1.3-mum region are demonstrated using InAs-GaAs quantum dots (QDs). The highest output powers of ~30-50 mW are achieved using 18 QD layers with p-doped GaAs spacers. At these high powers the device operates in a regime of broad bandwidth (~100 nm) with a spectral dip of ~5 dB between two separate peaks originated by the QD ground and excited states. Spectral calculations performed with a traveling-wave rate equation model show excellent agreement with the experimental data and provide design rules for optimizing the output spectrum. SLD characteristics are presented for two different device structures consisting of tilted and bent waveguides. The latter allows the achievement of higher output powers at lower currents. The coherence properties and the temperature characteristics are also discussed in detail. 相似文献
6.
Nonlinear optical beam propagation for optical limiting 总被引:8,自引:0,他引:8
We implement numerical modeling of high-energy laser-pulse propagation through bulk nonlinear optical materials using focused beams. An executable program with a graphical user interface is made available to researchers for modeling the propagation of beams through materials much thicker than the diffraction length (up to 10(3) times longer). Ultrafast nonlinearities of the bound-electronic Kerr effect and two-photon absorption as well as time-dependent excited-state and thermal nonlinearities are taken into account. The hydrodynamic equations describing the rarefaction of the medium that is due to heating are solved to determine thermal index changes for nanosecond laser pulses. We also show how this effect can be simplified in some cases by an approximation that assumes instantaneous expansion (so-called thermal lensing approximation). Comparisons of numerical results with several Z-scan, optical limiting and beam distortion experiments are presented. Possible application to optimization of a passive optical limiter design is discussed. 相似文献
7.
Y. K. Su H. C. Yu S. J. Chang C. T. Lee J. S. Wang A. R. Kovsh Y. T. Wu K. F. Lin C. Y. Huang 《Materials Science and Engineering: B》2004,110(3):256-259
Resonant cavity light emitting diodes (RCLEDs) containing nine sheets of self-organized InAs quantum dot (QD) active layers and operating at around 1.3 μm are demonstrated. The structure was grown directly on GaAs substrates, which includes selectively oxidized AlOx current apertures and intracavity metal contacts. It was found that the average operating resistance is 60 Ω, while the average turn-on voltages is 1.6 V. It was also found that temperature coefficient of these RCLEDs was about 0.11 nm/°C. 相似文献
8.
N. Yu. Gordeev I. I. Novikov A. M. Kuznetsov Yu. M. Shernyakov M. V. Maximov A. E. Zhukov A. V. Chunareva A. S. Payusov D. A. Livshits A. R. Kovsh 《Semiconductors》2010,44(10):1357-1361
The concept of a diffraction optical filter is used for prevention of high-order mode oscillation in a design of stripe laser
diodes with an active region based on InAs/InGaAs quantum dots emitting in the 1.3-μm wavelength range grown on GaAs substrates.
Incorporation of such a filter made it possible to increase the width of the stripe and obtain an output power as high as
700 mW with retention of a single-spatial-mode character of lasing. 相似文献
9.
High-power monolithic passively modelocked quantum-dot laser 总被引:1,自引:0,他引:1
Gubenko A. Livshits D. Krestnikov I. Mikhrin S. Kozhukhov A. Kovsh A. Ledentsov N. Zhukov A. Portnoi E. 《Electronics letters》2005,41(20):1124-1125
High-power operation of monolithic modelocked lasers based on 1.26 /spl mu/m self-organised quantum dots has been achieved in the 30-60/spl deg/C range for the first time. A 60/spl deg/C peak power reaches 1.7 W with a pulse width of 3.2 ps at a repetition frequency of 5 GHz. 相似文献
10.
N. N. Faleev Yu. G. Musikhin A. A. Suvorova A. Yu. Egorov A. E. Zhukov A. R. Kovsh V. M. Ustinov M. Tabuchi Y. Takeda 《Semiconductors》2001,35(8):932-940
High-resolution X-ray and synchrotron (crystal truncation rods) diffraction methods and transmission electron microscopy have been employed to study MBE-grown multilayer In(Ga)As-GaAs heterostructures with arrays of vertically coupled In(Ga)As quantum dots (QDs) in a GaAs matrix. Additional (vertical and lateral) spatial ordering of QDs in perfect crystalline structures, giving rise to undulations of the crystalline planes and quasi-periodic elastic strain, was shown to be essentially anisotropic with respect to crystallographic directions of the [110] type. The anisotropy of the QD formational system of can be accounted for by assuming that the spatial ordering of the QDs and the corrugation of the crystal planes are the initial stages of relaxation of the elastic strain introduced into the system by the QDs. The anisotropic relief of the crystal planes (corrugated growth surface) results from the formation of a system of spatially ordered quantum quasi-wires uniformly filled with QDs. In a multilayer heterostructure with high crystal perfection, the anisotropic relief of the crystal planes is inherited by overlying layers and its amplitude decreases gradually with increasing distance from the source of elastic strain—the superstructure containing In(Ga)As QDs in the given case. 相似文献