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Cu2ZnSn(S, Se)4 (CZTSSe) thin films were deposited on flexible substrates by three evaporation processes at high temperature. The chemical compositions, microstructures and crystal phases of the CZTSSe thin films were respectively characterized by inductively coupled plasma optical emission spectrometer (ICP-OES), scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman scattering spectrum. The results show that the single-step evaporation method at high temperature yields CZTSSe thin films with nearly pure phase and high Sn-related phases. The elemental ratios of Cu/(Zn+Sn)=1.00 and Zn/Sn=1.03 are close to the characteristics of stoichiometric CZTSSe. There is the smooth and uniform crystalline at the surface and large grain size at the cross section for the films, and no other phases exist in the film by XRD and Raman shift measurement. The films are no more with the Sn-related phase deficiency. 相似文献
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透明导电氧化物薄膜(Transparent Conductive Oxides,简称TCO)用途广泛,介绍了TCO应用于光伏领域中的铜铟镓硒薄膜(CIGS)太阳电池,是CIGS太阳电池中不可缺少的一部分。简要阐述了其可见光范围内的透明性和导电性及其成因,以及作为CIGS薄膜太阳电池中窗口层的作用。将ITO和ZAO透明导电薄膜在CIGS太阳电池的应用进行相比,以掺铝的氧化锌(ZnO∶Al简称ZAO)透明导电薄膜为例,对其性能、制备方法及过程进行了简要阐述,并概括了大面积ZAO薄膜的性能。 相似文献
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采用热蒸发法制备铟锌锡硫(CZTSSe)薄膜。采用低 温一步 法在300℃衬底温度下制备CZTSSe薄膜;采用两步法,即在衬底温度 分别为300℃制备CZTSSe 薄膜;将衬底温度设定为480℃不变,一步蒸发沉积CZTSSe薄膜。通 过对X射线衍射(XRD)、 扫描电镜(SEM)、拉曼谱对比发现,在300℃低温下一步法和300℃ 、480℃两 步法沉积的薄膜表面粗糙,碎小晶粒较多;在480℃一步高温法制备 的薄膜表面平整, 晶粒大小均匀,3个衍射峰的半高峰宽变窄,薄膜的结晶质量得到 改善,且没有发现其它杂相的拉曼特征峰,沉积出适合作为制备CZTSSe薄膜太阳电池的 吸收层。 相似文献
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A CuIn1-xGaxSe2 (CIGS) thin film solar cell model with MoSe2 transition layer was established, using SCAPS-1D software. The influence of MoSe2 interface layer formed between absorption layer CIGS and the back contact Mo on the solar cell performance was investigated.By changing the doping concentration,thickness and bandgap of MoSe2 layer, it is found that the MoSe2 and the variation of parameters have a significant effect on the electrical characteristics and photovoltaic parameters of CIGS thin film solar cells. Based on the energy band, the interfaces of Mo/MoSe2 and MoSe2/CIGS are analyzed. It is considered that Mo/MoSe2 is a Schottky contact, MoSe2/CIGS is an ohmic contact. When suitable parameters of MoSe2 layer are formed into the interface, it will provide a new path for designing CIGS solar cells with thinner absorption layer. 相似文献
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We report optical and electrical properties of polycrystalline GaSb thin films which were successfully grown by co-evaporation on soda-lime glass substrates. The thin films have preferential orientation of the (111) direction. SEM results indicate that the average grain size of GaSb thin film is 500 nm with the substrate temperature of 560 ℃. The average reflectance of GaSb thin film is about 30% and the absorption coefficient is of the order of 10^4 cm^-1. The optical bandgap of GaSb thin film is 0.726 eV. The hole concentration shows a clear increasing trend as the Ga-evaporation-temperature/Sb-evaporation-temperature (TGa/Tsb) ratio increases. When the Ga crucible temperature is 810 ℃ and the antinomy crucible temperature is 415 ℃, the hole concentration of polycrystalline GaSb is 2 × 10^17 cm^-3 and the hole mobility is 130 cm^2/(V·s). These results suggest that polycrystalline GaSb thin film is a good candidate for the use as a cheap material in TPV cells. 相似文献
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Cu(In,Ga)Se2 (CIGS) thin films are prepared by a single-stage process and a three-stage process at low temperature in the co-evaporation equipment. The quite different morphologies of CIGS thin films deposited by two methods are characterized by scanning electron microscopy (SEM). The orientation of CIGS thin films is identified by X-ray dif- fraction (XRD) and Raman spectrum, respectively. Through analyzing the film-forming mechanisms of two prepara- tion processes, we consider the cause of such differences is that the films deposited by three-stage process at low tem- perature evolve from Cu-poor to Cu-rich ones and then back to Cu-poor ones. The three-stage process at low tempera- ture results in the CIGS thin films with the (220)/(204) preferred orientation, and the ordered vacancy compound (OVC) layer is formed on the surface of the film. This study has great significance to large-scale industrial production. 相似文献
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