基于反求工程技术和快速原型制造(RPM)技术的产品快速开发

制造业已经历了以价格、质量为主的竞争时期，商业机遇响应速度逐渐成为现今企业竞争的第一要素。因而论述了快速原型制造技术和反求工程技术在产品快速开发中的应用和技术实现。     

彩色三维打印成形技术及应用

介绍了彩色三维打印(3DP)成形技术的工作原理及其成形工艺,分析了彩色三维打印的原型件的物理性能.此外,还介绍了彩色三维打印成形技术的应用.     

A Cross-Coupled Path Precompensation Algorithm for Rapid Prototyping and Manufacturing

A cross-coupled path precompensation (CCPP) algorithm for a rapid prototyping and manufacturing (RPM) system is proposed in this paper in order to reduce the contour error resulting from the dynamic track error in the position control of the RPM system. The input of the CCPP plant is generated by a software interpolator, and the output is the compensated feedrate of the biaxial system. The precompensation amount is computed according to track errors that are estimated by mathematical models of each servo mechanism and the tangent angle at the desired point along the prespecified path. The new point acquired by the precompensation method is located in the normal direction of the original point. Simulation and experiments on the algorithm along a circular path of 200 mm in diameter are implemented. The experimental results demonstrate the advantage of the algorithm for RPM systems.     

金属直接成型系统多任务控制方法研究

简述了基于同步送粉器的金属直接成型系统工作原理；并介绍了金属直接成形时多任务控制的特点，提出了功能梯度零件直接成型的可行算法。应用并行控制的基本理论思想，提出了金属直接成型系统多任务并行控制方法。编制了并行系统控制VC软件，实现了工作台三维运动与送粉器及激光系统的精确同步运行。     

滚筒法不锈钢钢渣处理技术的研究和应用

不锈钢钢渣的环保化处理是钢铁行业面临的难题之一,不锈钢钢渣中高含量游离CaO与MgO导致浸泡处理时粉化严重,环境污染大;不锈钢钢渣中不稳定的六价铬易溶于水造成水体污染。通过对滚筒法处理不锈钢钢渣的工艺抑制不锈钢钢渣粉化和抑制Cr3+的氧化析出进行研究和机理分析,并结合工程实例应用,论证了采用滚筒法处理不锈钢钢渣的可行性,为不锈钢钢渣环保化处理和资源利用奠定了基础。     

二维大地电磁测深曲线的快速反演

以ＢＯＳＴＩＣＫ反演方法和二维正演为基础,结合曲线对比和模型对比方法,推出了一种二维大地磁测深的快速反演方法,经理论应用表明,效果很好。     

Second phases of rapidly solidified AlFeCrZrVSi alloy and their thermal stabilities

ＳＥＣＯＮＤＰＨＡＳＥＳＯＦＲＡＰＩＤＬＹＳＯＬＩＤＩＦＩＥＤＡｌＦｅＣｒＺｒＶＳｉＡＬＬＯＹＡＮＤＴＨＥＩＲＴＨＥＲＭＡＬＳＴＡＢＩＬＩＴＩＥＳＸｉａｏＹｕｄｅＬｉＳｏｎｇｒｕｉＬｉＷｅｎｘｉａｎＺｅｎｇＺｈｉｈｕａＭａＺｈｅｎｇｑｉｎｇ（Ｄｅｐａ...     

对煤灰中三氧化硫含量快速测定方法的研究

介绍一种快速,准确地测定煤灰中三氧化硫含量的方法,阐述了该方法的试验原理、实验材料和操作步骤,并提供了新旧方法对比试验的数据。数理统计结果表明,新、旧方法在试验结果上无显著性差异。新方法由于其节省时间和简单易学的特点,有利于在生产中推广。     

Rapid Crystallization for Efficient 2D Ruddlesden–Popper (2DRP) Perovskite Solar Cells

Due to the additional introduction of bulky organic ammonium and the competition between bulky organic ammonium and methyl ammonium in 2D Ruddlesden‐Popper (2DRP) perovskite, the crystallization process becomes complicated. Here, it is demonstrated that the rapid crystallization controlled by processing solvents plays an important role in achieving high‐quality 2DRP perovskite films. It is found that the processing solvents, e.g., dimethylacetamide (DMAC), N,N‐dimethylformamide (DMF), and dimethyl sulfoxide (DMSO), with a different polarity and boiling point, have almost no effect on crystal structure and phase distribution but have a remarkable effect on crystallization kinetics, crystal growth orientation, and crystallinity of 2DRP perovskite. Compared to polar aprotic solvent DMF and DMSO with a high boiling point, DMAC with low polarity and a suitable boiling point has a weak coordination to lead and ammonium salts and is easy to escape during solution processing, which is able to accelerate the crystallization rate of 2DRP perovskite. Benefitting from the rapid crystallization enabled high‐quality 2DRP perovskite films, the best‐performing device with improved stability and a power conversion efficiency of 12.15% is obtained using DMAC solvent. These findings may give guidance for solvent engineering for highly efficient 2DRP perovskite solar cells in the future.     

Low‐Temperature and Rapid Growth of Large Single‐Crystalline Graphene with Ethane

Future applications of graphene rely highly on the production of large‐area high‐quality graphene, especially large single‐crystalline graphene, due to the reduction of defects caused by grain boundaries. However, current large single‐crystalline graphene growing methodologies are suffering from low growth rate and as a result, industrial graphene production is always confronted by high energy consumption, which is primarily caused by high growth temperature and long growth time. Herein, a new growth condition achieved via ethane being the carbon feedstock to achieve low‐temperature yet rapid growth of large single‐crystalline graphene is reported. Ethane condition gives a growth rate about four times faster than methane, achieving about 420 µm min^?1 for the growth of sub‐centimeter graphene single crystals at temperature about 1000 °C. In addition, the temperature threshold to obtain graphene using ethane can be reduced to 750 °C, lower than the general growth temperature threshold (about 1000 °C) with methane on copper foil. Meanwhile ethane always keeps higher graphene growth rate than methane under the same growth temperature. This study demonstrates that ethane is indeed a potential carbon source for efficient growth of large single‐crystalline graphene, thus paves the way for graphene in high‐end electronical and optoelectronical applications.