高钙盐钻井液体系的研究与应用

中原油田的白庙、河岸、文东和卫城等地区存在着大段易分散、膨胀的泥页岩，造成井下事故。为此，研制了高钙盐钻井液体系。室内实验结果表明，高钙盐钻井液体系能抗150℃以上高温，具有良好的流变性和较低的滤失量，滤饼韧性好；具有和饱和盐水相当的强抑制性，抗盐膏；具有较好的保护油气层作用。现场应用表明，高钙盐钻井液达到了：①固相容量限高。抑制性强，在密度为1．4g／cm^3、膨润土含量为43g／L的情况下仍保持低粘度和切力；②机械钻速比邻井提高30％左右；③维护处理简单，处理成本低；④使用密度比邻井低0．05g／cm^3．保护油气层效果好，静态和动态岩心渗透率恢复值都大干80％。高钙盐钻井液较好地保护了油气层．成功地解决了泥页岩膨胀分散和垮塌问题。     

BCC金属Nb的重离子辐射损伤研究

采用81 MeV碳离子辐照,模拟中子注量为10~(23)/cm~2的堆中子在Nb中产生的辐射损伤,用时间微分扰动角关联和正电子湮没二种方法研究辐射损伤及其高温退火效应。实验发现经注量2.5×10~(16)/cm~2的碳离子辐照后,在BCC金属Nb中产生单空位和双空位二种缺陷。随退火温度升高,双空位分解,单空位的总浓度逐步减小,经过1058K退火后,在Nb中由辐射损伤造成的缺陷消失。     

G104-5P42分支水平井钻井液工艺技术

G104-5P42井是在高尚堡G104-5区块构造较高部位部署的一口重点开发井，也是冀东油田第一口鱼骨型水平分支井，钻探目的是开发高浅北区Ng12油层，挖掘高浅北区井间剩余油潜力。该井主井眼斜深为2388m，水平位移为736．42m，水平段长243m，第一分支斜深为2342m，水平段长120．25m，水平位移为682．14m，第二分支斜深为2421m，水平段长117m，水平位移为761．73m。三开选用无固相甲酸盐聚合醇钻井液，在钻进油气层前加入GN-YBJ-I保护剂。应用结果表明，无固相甲酸盐聚合醇钻井液具有好的防塌能力和润滑减阻效果，性能稳定、黏度、切力较低，有利于减少环空压力损耗；在油气层段密度控制在1．08g／cm^3以内，为近年来同区块密度使用最低井，减小了有害固相及滤液对储层的伤害密度，经测试该井获高产油流；该井全井平均机械钻速为15．09m／h，钻井周期比原设计提前15d。该体系的配制及维护成本较高，适宜在目的层井段使用，但可回收再利用。     

硅片和硅器件工艺中的背面损伤吸除技术

本文介绍了硅片背面的三种主要损伤吸除技术：机械损伤、激光辐照和离子注入技术。对这三种吸除技术的机理、工艺条件、应用情况和近来进展，作了详细的评述。     

通过直接栅电流测量研究PMOSFET's热载流子损伤

通过直接栅电流测量方法研究了热载流子退化和高栅压退火过程中PMOSFET's热载流子损伤的生长规律.由此,给出了热载流子引起PMOSFET's器件参数退化的准确物理解释.并证明了直接栅电流测量是一种很好的研究器件损伤生长和器件参数退化的实验方法.     

钻井液与油气层损害及保护室内研究中的数学方法

介绍了在钻井液与油气层损害及保护研究领域里常用的数种具有推广应用价值的数学方法，说明了各种方法的基本原理及其在此研究领域中的具体应用成果。     

低压低渗气藏钻探过程中的保护方案

针对鄂尔多斯塔巴庙区块低压低渗气藏物理特性复杂的情况，推荐一套切实可行的气层保护方案。即实行全面钻井液监控；采用欠平衡钻井技术；储层保护前期研究；采用与地层流体配伍性好的阳离子钻井液体系；降低钻井完井液的滤失量，API滤失量小于5mL、高温高压滤失量小于15mL、固相含量小于8％、含砂量小于0．3％；根据储层裂缝的宽度和走向使用保护剂；对裸眼完钻的气层利用洗井清除井壁附近的污染带，恢复储层原始渗透率；固井作业防止气窜；采用具有抑制地层水敏、速敏保护气层的优质射孔液；水力压裂优化压裂设计，严格压裂施工。总之，气层保护技术是一个系统工程，任何一个环节的问题，都将对气层产生伤害．因此需加强气层保护研究，做到在钻开气层到投产的每道工序都采取积极有效的气层保护措施。     

甲醇蒸汽转化炉炉管损伤分析及修复

通过对乙烯厂甲醇车间蒸汽转化炉炉管的材料成分、力学性能、金相组织等的分析，确定定其失效模式为高温蠕变损伤，找到造成及影响炉管失效的主要因素。并对炉管的修复以及预防提出了有效的方法及建议。     

Damage and strain in pseudomorphic vs relaxed GexSi1−x layers on Si(100) generated by Si ion irradiation

We compare both the strain and damage that 100 keV Si irradiation at room temperature introduces in pseudomorphic and relaxed Ge_xSi_1−x films grown on Si(100) substrates. The ion range is such that the Si/Ge_xSi_1−x interface is not significantly damaged. The amount of damage produced in pseudomorphic and relaxed Ge_xSi_1−x layers of similar x for irradiation doses up to 2.5 × 10¹⁴ Si/cm² is the same, which proves that a pre-existing uniform strain does not noticeably affect the irradiation-induced damage. However, the irradiation-induced strain does depend on the pre-existing strain of the samples. Possible interpretations are discussed. On leave from Inst. voor Kern en Stralingsfysika, Catholic University of Leuven, Belgium.     

A Method of Combined SHPB Technique and BP Neural Network to Study Impact Response of Materials

Abstract:  A new method combining the split Hopkinson pressure bar (SHPB) technique with the back-propagation (BP) neural network program is proposed. By this method, the treated strain wave signals become smooth with less noises induced by the transverse inertia. Moreover, the dynamic rate-dependent constitutive behaviour of materials can be identified, without any pre-assumption of a constitutive model. It is found that by taking the experimentally measured data of strain, strain rate and time as 'input' and the corresponding data of stress as 'output' of the BP neural network, the dynamic constitutive behaviour with internal damage or phase transformation evolution is easy to be identified, where the time could represent either the internal damage evolution or phase transformation process accompanied with the deformation process. It is emphasised that the data learnt by the BP neural network must include both loading and unloading processes, if the whole loading and unloading response is to be correctly predicted. The comparisons between the predictions and experimental results are in good agreement for both polyamide (PA) polymer (as an example of nonlinear viscoelastic materials) and Ti–Ni alloy (as an example of superelastic materials with stress-induced phase transformation).