沉积温度对ZnO薄膜结构及发光性能的影响

利用Nd-YAG激光器(波长为1064nm,频率为10Hz)做光源,采用纯金属锌靶,以Si(111)为基体在有氧的气氛中通过激光烧蚀锌靶表面来制备氧化锌薄膜,研究基体温度对ZnO薄膜结构及发光性能的影响.通过XRD和AFM原子力显微镜来表征氧化锌薄膜的结构和表面形貌,其光学性质由光致发光谱来表征.结果表明:在450-550 ℃的条件下沉积的ZnO薄膜具有c-轴择优取向,500℃时c-轴取向最明显.具有c-轴取向的ZnO薄膜具有强的紫外光发射和弱的绿光发射,发光中心在518nm处的黄绿光发射主要归因于电子从导带底部到氧位错缺陷OZn能级之间的跃迁.     

Preparation of homogeneous ZnO nanoparticles via precipitation-pyrolysis with Zn5（CO3）2（OH）6 as precursor

1 Introduction Recently, demands for high product performance products have necessitated a precise control of ZnO particle properties for applications such as electrode of solar cells and photocatalysts. Much attention is given to the high chemical reacti…     

ZnO nanoneedles fabricated by a simple approach and their optical properties

Spoke-like ZnO nanoneedles have been successfully synthesized at the ambient pressure through thermally oxidizing Zn powders containing Au nanoparticles. X-ray diffraction analysis indicates that the ZnO nanoneedles have a hexagonal wurtzite structure of the crystalline ZnO. The morphology of the products was examined by FESEM. The photoluminescenee(PL) spectrum under 325 nm exhibits both an UV emission and a green emission. It is interesting to note that the heating rate plays a key role in the synthesis of ZnO nanoneedles. Based on this discovery we propose to explain the special growth behavior as novel mechanism that a large temperature gradient and Au nanoparticles simultaneously result in the spoke-like ZnO nanoneedles growth.     

Fabrication of ZnO films by radio frequency magnetron sputtering and annealing

ZnO thin films were deposited on Si（111） substrates through a radio frequency （rf） magnetron sputtering system. Then the samples were annealed at different temperatures in air ambience and ammonia ambience respectively. The structure and composition of the ZnO films were studied by X-ray diffraction （XRD） and X-ray photoelectron spectroscopy （XPS）. The morphology of the samples was studied by scanning electron microscopy （SEM）. Measured results show that ZnO films with hexagonal wurtzite structure were grown on Si（111） substrates when annealed in the two ambiences. The volatilization process of ZnO in the ammonia ambience at high temperature was discussed and the mechanism of the reaction was analyzed.     

Surface morphology and photoluminescence properties of ZnO thin films obtained by PLD

ZnO thin films on Si(111) substrate were deposited by laser ablation of Zn target in oxygen reactive atmosphere, Nd-YAG laser with wavelength of 1 064 nm was used as laser source. XRD and FESEM microscopy were applied to characterize the structure and surface morphology of the deposited ZnO films. The optical properties of the ZnO thin films were characterized by photoluminescence. The UV and deep level (yellow-green) light were observed from the films. The UV light is the intrinsic property and deep level light is attributed to the existence of antisite defects (Ozn). The intensity of UV and deep level light depends strongly on the surface morphology and is explained by the surface roughness of ZnO film. A strongly UV emission can be obtained from ZnO film with surface roughness in nanometer range.     

ZnO／Ag纳米复合材料光催化性能研究

通过XRD、TEM测试研究了自制ZnO／Ag纳米复合材料的结构和形貌，通过UV检测确定了以该纳米复合材料为光催化剂，在不同条件下对甲基橙的光催化降解率。结果表明：与空气煅烧相比，真空煅烧所得纳米复合材料的光催化降解效果更好，且光催化降解率随纳米复合材料用量增加而增大：甲基橙溶液的pH在5左右时，光催化降解率最高：H2O2浓度为0．9g／L时，光催化降解率可达100％。     

Characteristics of ZnO thin film deposited on various metal bottom electrodes

ZnO films for electronic applications were deposited by radio-frequency (rf) sputtering onto various metal bottom electrodes (Pt/Ti, W, Ni) to investigate such structural properties as crystallinity and surface morphology. The crystallinity, surface morphology and composition of the as-deposited films were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM) and Rutherford back-scattering spectrometry (RBS), respectively. The preferred orientation and surface morphologies were strongly influenced by the type of bottom electrodes. The ZnO films with (200) texturing deposited on Pt/Ti/SiO₂/Si showed a smoother and smaller grain size than those deposited on W and Ni. The ZnO films on Pt and W electrodes exhibited compressive residual stress. This article is based on a presentation made in the 2002 Korea-US symposium on the “Phase Transformations of Nano-Materials”, organized as a special program of the 2002 Annual Meeting of the Korean Institute of Metals and Materials, held at Yonsei University, Seoul, Korea on October 25–26, 2002.     

Preparation of flee-standing diamond films for high frequency SAW devices

Free-standing diamond films were prepared by hot filament chemical vapor deposition （HFCVD） method under different conditions. Inter-digital transducers （IDTs） were formed on the nucleation sides of free-standing diamond films by photolithography technique. Then piezoelectric ZnO films were deposited by radio-frequency（RF） reactive magnetron sputtering to obtain the ZnO/diamond film structures. Surface morphologies of the nucleation sides and the IDTs were characterized by means of scanning electron microscopy （SEM）, atomic force microscope （AFM） and optical microscopy. The results indicate that the surfaces of nucleation sides are very smooth and the IDTs are of high quality without discontinuity and short circuit phenomenon. Raman spectra show the sharp diamond feature peak at about 1 334 cmI and the small amount of non-diamond carbon in the nucleation side. X-ray diffraction （XRD） patterns of the structure of ZnO/diamond films show a strong diffraction peak of ZnO （002）, which indicates that as-sputtered ZnO films are highly c-axis oriented.     

掺铝ZnO纳米粉的制备与气敏特性研究

用可溶性无机盐法(ISG法)制备掺杂Al^3 的ZnO纳米气敏材料，用D／Max0-rB型X-射线粉末衍射仪研究纳米晶的结构。结果表明制备的掺铝ZnO纳米材料属于六方晶系，纤锌矿结构。用Seherrer公式计算得ZnO和掺铝ZnO的平均晶粒分别为40nm和35nm。用掺铝的ZnO纳米粉做成气敏元件，测试了不同铝含量的纳米材料在不同浓度的乙醇气体和氢气下的敏感特性。结果表明随着气体浓度的增加，灵敏度逐渐上升；随着Al含量的减少，材料气敏灵敏性逐渐增强。当铝含量为Al／ZnO=O．5％(mol)时，对O．2％的乙醇气体的灵敏度最大可达到127。并讨论了纳米材料对敏感气体的物理吸附和化学吸附以及纳米氧化物的气敏机理。     

工艺参数对合成ZnO／Ag纳米复合抗菌剂产率的影响

通过正交实验，研究了反应温度、反应时间、反应物配比对ZnO／Ag纳米复合抗菌剂合成产率的影响规律。获得了高产率合成ZnO／Ag纳米复合抗菌剂的优选工艺条件：反应温度为10～25℃，ZnSO4与NH4HCO3的摩尔比为1：2-2．5，ZnSO4与NH4HCO3的反应时间为2．5～3h，AgNO3与NH4HCO3的摩尔比为1：1．5～2，反应时间为0．5h，ZnO／Ag的产率超过98％。XRD、TEM和SAED结果表明：ZnO／Ag纳米复合抗菌剂为具有纤锌矿结构的ZnO和立方结构的Ag组成。粒径为15～25nm，分散性较好。