Selective and nonselective wet etching of Zn0.9Mg0.1O/ZnO

Wet etch rates at 25°C for Zn_0.9Mg_0.1O grown on sapphire substrates by pulsed laser deposition (PLD) were in the range 300–1100 nm · min⁻¹ with HCl/H₂O (5×10⁻³−2×10⁻² M) and 120–300 nm · min⁻¹ with H₃PO₄/H₂O (5×10⁻³−2×10⁻² M). Both of these dilute mixtures exhibited diffusion-limited etching, with thermal activation energies of 2–3 kCal · mol⁻¹. By sharp contrast, the etch rates for ZnO also grown on sapphire by PLD were much slower in similar solutions, with rates of 1.2–50 nm · min⁻¹ in HCl/H₂O (0.01–1.2 M) and 12–54 nm · min⁻¹ in H₃PO₄/H₂O (0.02–0.15 M). The etching was reaction limited over the temperature range 25–75°C, with activation energies close to 6 kCal · mol⁻¹. The resulting selectivity of Zn_0.9Mg_0.1O over ZnO can be a high as ∼400 with HCl and ∼30 with H₃PO₄.     

氧化锌颗粒膜电阻响应-恢复特性研究

测试了氧化锌颗粒膜电阻响应-恢复特性，讨论了颗粒形态，加热电压、环境气氛、气氛浓度和注入方式等因素对电阻响应-恢复特性的影响。结果表明，随着加热电压的升高，电阻响应-恢复的速度和程度明显加大；断续注入时颗粒膜电阻值的响应随着浓度的增加逐步减弱．     

采用ZnO灭磁时阀片均流/均能的探讨

从ZnO电阻的非线性特性出发,对采用ZnO作为灭磁电阻时阀片的均流/均能进行理论论述,指出阀片均能性能的好坏主要依赖于阀片自身的特性;分析比较了ZnO阀片的不同选择方法对均流/均能的影响,指出阀片的均流/均能很大程度上取决于可供选择的阀片的库存量.该研究为发电机励磁系统的安全稳定运行提供了有力的保证.     

Characteristics of Schottky Barrier Junction Based on Hexagonal Microtube ZnO

Hexagonal microtube ZnO was firstly grown on single crystal p-Si (111) substrates by hydrothermal method, and fabricated Ag/n-ZnO and Au/n-ZnO Schottky junction. Schottky effective barrier heights were calculated by I-V measurement. It is confirmed that the presence of a large amount of surface states related possibly to lattice imperfections existed near the surface leads to the pinning of the surface Fermi level at 0.35 eV below the conduction-band edge. Then the fabricated Schottky barrier junctions are evaluated for their use as UV photodetectors.     

Conductivity enhancement in transparetn ZnO films via Al-dopping produced by CW-CO2 laser-induced evaporation

Highly conductive transparent aluminium-doped ZnO (ZnO:A1) films were successfully deposited by CW-CO₂ laser-induced evaporation. Optimisation of evaporation parameters was based on laser power, substrate temperature, O₂ partial pressure in the vacuum chamber and amount of Al in the ZnO source pellet. ZnO:A1 films with an electrical resistivity as low as 6.6 × 10⁻²Ω·cm and an optical transmission of 80% at 500nm were obtained at laser power of 15 W, substrate temperature of about 200°C, O₂ partial pressure of 6—7 × 10⁻⁴ Torr and 5wt.% Al. Conductivity of ZnO films can be increased one order via Al-doping in ZnO films. The films obtained by laser-induced evaporation have compared quite favorably with the high quality films obtained by sputtering.     

ZnO压敏陶瓷的非线性功能添加剂

本文采用单元掺杂与多元掺杂的方法，系统研究了几种过渡金属氧化物添加剂在控制ＺｎＯ压敏陶瓷非线性方面的作用，并根据金属阳离子外壳层电子结构稳定性和缺陷化学反应进行了分析，认为阳离子具有不饱和外层电子结构且半径与Ｚｎ＾２＋离子相近的过渡金属氧化物能改善ＺｎＯ压敏陶瓷非线性。     

Ag/CeO2-ZnO催化剂上甲醇部分氧化制氢气研究

研究了用于甲醇部分氧化制氢气反应的Ag/CeO2-ZnO催化剂的制备条件以及反应条件对催化剂性能的影响.Ag/CeO2-ZnO催化剂中银含量、焙烧温度、反应温度以及反应气的比例等对催化剂性能具有很大的影响.Ag/CeO2-ZnO催化剂的制备条件以及反应条件控制在一定范围内时,Ag/CeO2-ZnO催化剂对甲醇部分氧化制氢气具有很高的催化活性与选择性.     

纳米氧化锆/氧化锌光催化降解酸性红B的研究

以醋酸锌和氯氧化锆为原料，采用化学沉淀法制备了纳米氧化锆／氧化锌光催化剂。在中性条件下研究了催化剂煅烧温度，锆复合量，催化剂用量，染料初始质量浓度，过氧化氢质量浓度，各种阴、阳离子等条件对酸性红B脱色反应的影响。结果表明，该催化剂最佳制备条件为煅烧温度350℃，锆复合量2．5％（物质的量分数）。催化剂最佳用量0．9g／L。提高染料初始质量浓度会降低反应脱色率。适量过氧化氢可提高反应脱色率，当其质量浓度超过300mg／L会起负作用。NO3^-对反应影响不大；Fe^3＋和Ag^＋对反应起促进作用；SO4^2-，Cl^-，NO2^-等阴离子和Fe^2＋，Mn^2＋等阳离子对反应起抑制作用。     

On the oxidative coupling of methane with carbon dioxide over CeO2/ZnO nanocatalysts

The nano-CeO₂/ZnO catalysts were prepared using a novel combination of homogeneous precipitation with micro-emulsion for oxidative coupling of methane with CO₂ as an oxidant. The prepared catalysts were compared with those prepared using the conventional impregnation. The catalysts prepared in two ways were characterized with FTIR, TEM, XRD and CO₂-TPD. The effects of the reaction temperature, the amount of ZnO doped in the catalysts and the average size were investigated. The experimental investigation demonstrated that methane conversion over the nano-CeO₂/ZnO catalysts prepared by the combined technique was higher than that obtained over catalysts prepared by the conventional impregnation. A better low-temperature activity has also been achieved over the nanocatalysts. There was no clear trend between the average size of nano-CeO₂/ZnO catalysts and their catalytic performance but methane conversion increased with increasing fractal dimension of nanocatalysts.     

Growth and formation mechanism of sea urchin-like ZnO nanostructures on Si

Sea urchin-like nanostructures of ZnO consisting of ZnO nanowires with blunt faceted ends were grown on Si (100) substrates by oxidation of metallic Zn at 600 °C. ZnO nanowires having a diameter of 30–60 nm and length of 2–4 Μm were in similar shape with uniform diameter along its entire length with well faceted blunt ends. X-ray diffraction and transmission electron microscope analysis showed that the as-grown nanostructures were highly crystalline with wurtzite hexagonal structure having lattice constants of a=b=3.25 å and c=5.21 å. Room temperature photoluminescence (PL) measurements showed a weak near band-edge emission at 380 nm, but a strong green emission at 500–530 nm. A model for vapor-solid (VS) growth mechanism of ZnO nanowires was presented, in which nucleation of ZnO is crucial for the growth of the nanostructures.