Graphite formation on Ni film by chemical vapor deposition

Thin film formation of graphite by chemical vapor deposition using 2-methyl-1,2′-naphthyl ketone as a starting material was carried out on Ni film substrates. On Ni films directly deposited on quartz glass, the graphite films were obtained when the Ni film thickness was above 1 000 Å and above 5 000 Å at 700 °C and 1 000 °C, respectively. Depositions on thinner Ni film substrates comprise amorphous carbon (a-C) or graphite tubes which was owing to the thermal coagulation of the Ni film into droplets. On the other hand, graphite film was obtained on the Ni film with thickness 10 Å when a-C was inserted between the Ni film and the quartz glass. The coagulation of the Ni film is considered to be avoided by inserting a-C layer.     

Characterization and modification of fillers for paints and coatings

This paper highlights the possibility of inverse gas chromatography for the surface characterization of common fillers (CaCO₃, talc, SiO₂,) for paints and coatings. Divided solids are described, on the one hand, by the dispersive component of their surface energy and, on the other, by a specific parameter indicating their acid-base interaction potential. The role of the surface morphology at a molecular level is also examined. It is demonstrated that steric effects play an important role in the adsorption of probes on lamellar solids like talc. The consequences of surface treatments as well as examples of practical applications are also reported.     

Additives distribution and electrical properties in zinc oxide varistor prepared by a wet chemical method

Cobalt-, praseodymium-added zinc oxide varistor was prepared through a wet chemical method followed by sintering with or without calcination. Changes in grain size, compact density, additives distribution, and voltagecurrent/ capacitance-voltage relations were investigated for the characterization of the samples sintered at temperatures from 1473 to 1573 K without calcination or with calcination at 773 K for 2 h. The electrical properties were compared with nhose of samples prepared by two types of ball mill methods. The wet chemical method provided almost the same additives-distribution profile and less impurities in comparison with the ball grinding method carried out for 10–100 h. The donor concentration and the potential-barrier height for the samples were evaluated by Double Schottky Barrier Model. Addition of small amount of both cobalt and praseodymium in preparation by the wet chemical method was effective for a better nonlinearity relation between voltage and current, which has potential for a smaller sized varistor.     

Evaluating Ozone as a Remedial Treatment for Removing RDX from Unsaturated Soils

Years of wastewater discharge at the Department of Energy’s Pantex Plant have contaminated the vadose zone and underlying perched aquifer with hexahydro-1,3,5-trinitro-1,3,5-triazine (RDX). Because the vadose zone is acting as a continual source of groundwater contamination, removing RDX from the unsaturated zone is paramount to prevent further contamination. We determined the efficacy of ozone to degrade and mineralize RDX. Solution experiments showed that ozone (27?mg?L?1; 150?mL?min?1) was effective in mineralizing 80% of the RDX (30?mg?RDX?L?1) provided that some Pantex soil was present to buffer the solution pH. Soil columns treated with ozone produced 50% RDX mineralization within 1 day and >80% within 7 day. Experiments designed to evaluate aerobic biodegradation following partial ozonation of a RDX solution showed that ozone-generated RDX products were much more biodegradable than untreated controls in aerobic microcosms (35 versus <0.3% cumulative mineralization). These results support the use of ozone as a remedial treatment for the contaminated vadose zone at the Pantex facility.     

Hybrid gas-to-particle conversion and chemical vapor deposition for the production of porous alumina films

Porous alumina films can be found in a wide variety of materials, including filters, thermal insulation components, dielectrics, biomedical and catalyst supports, coatings and adsorbents. Production methods for these films are as equally diverse as their applications. In this work, a hybrid process based upon chemical vapor deposition and gas-to-particle conversion is presented as an alternative technique for producing porous alumina films, with the main advantages of solvent-free, low substrate-temperature operation. In this process, nanoparticles were produced in the vapor phase by reaction of aluminum acetylacetonate in the presence of oxygen. Downstream of this reaction zone, these nanoparticles were collected via thermophoresis onto a cooled substrate, forming a porous film. Some deposited films were subjected to post-processing in the form of annealing in air. Fourier-transform infrared spectra and X-ray energy-dispersive spectroscopy analysis confirmed the production of alumina at processing temperatures above 973 K. X-Ray diffraction revealed that the films were amorphous. Film thickness, ranging from 30 to 250 μm, and the average deposition rate were determined from scanning electron microscopy results. From transmission electron microscopy, the average primary particle size was determined to be approximately 18 nm and the formation of nanoparticle aggregates was evident. Annealing of the films at temperatures ranging from 523 to 1173 K in the presence of air did not have an effect on particle size. The specific surface area of the powder composing the films ranged from 10 to 185 m² g⁻¹, as determined from nitrogen gas adsorption by the Brunauer–Emmett–Teller method.     

大型空分设备循环冷却水处理方法的对比研究

武钢氧气公司在大型空分设备循环冷却水系统中,采用化学法和物理法进行水处理效果的实践探索,从原理和监测数据上进行了对比、分析研究,确认物理法具有高效除垢、防垢、杀菌灭藻、缓蚀以及净化等功能,可以取代化学法进行循环水处理。     

A novel technique to prepare LiNbO3 at low temperature

Fresh niobium hydroxide was first precipitated from NbF₅ solution using an aqueous ammonium hydroxide under basic conditions. Then a simple procedure of mixing lithium and niobium hydroxides together and heating at a low temperature (400 °C) produced pure ultrafine single phase LiNbO₃ (LN). In the literature, this is the lowest temperature so far reported on the formation of LN. The phase content and lattice parameters are determined by X-ray diffraction (XRD). The average particle size and morphology were studied by transmission electron microscopy (TEM).     

Chemical vapor deposition of amorphous ruthenium-phosphorus alloy films

Chemical vapor deposition growth of amorphous ruthenium-phosphorus films on SiO₂ containing ∼ 15% phosphorus is reported. cis-Ruthenium(II)dihydridotetrakis-(trimethylphosphine), cis-RuH₂(PMe₃)₄ (Me = CH₃) was used at growth temperatures ranging from 525 to 575 K. Both Ru and P are zero-valent. The films are metastable, becoming increasingly more polycrystalline upon annealing to 775 and 975 K. Surface studies illustrate that demethylation is quite efficient near 560 K. Precursor adsorption at 135 K or 210 K and heating reveal the precursor undergoes a complex decomposition process in which the hydride and trimethylphosphine ligands are lost at temperatures as low at 280 K. Phosphorus and its manner of incorporation appear responsible for the amorphous-like character. Molecular dynamics simulations are presented to suggest the local structure in the films and the causes for phosphorus stabilizing the amorphous phase.     

Formation of mushroom-like ZnO microcrystals through a solution calcination process

Mushroom-like ZnO microcrystals have been prepared via a solution calcination route, using Zn(NO₃)₂ as Zn source in the absence of any surfactants, templates or catalysts. This is the first example to prepare mushroom-like crystals as semiconductors, which are expected to show particular physical properties. The ZnO products were investigated by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and photoluminescence (PL) spectrum measurements. A suitable concentration of Zn(NO₃)₂ solution was important for the growth of the mushroom-like products. The reported synthetic procedure is straightforward and inexpensive, and thus can be readily adopted to produce large quantities of mushroom-like ZnO microcrystals.