制造工艺低相关的AGC跨阻放大器

文章提出了一种速率为622 Mbit/s的带自动增益控制(AGC)和自动偏移补偿(AOC)的光通信用跨阻集成放大器电路.本设计采用了中芯国际0.25 μm 1P3M的标准互补金属氧化物半导体(CMOS)工艺.HSPICE仿真结果表明,在各种偏差最大的工艺条件下,跨阻放大器初始增益的浮动区间为-10.2%～9.7%,而AGC的初始偏置电压的浮动区间为-0.384%～0.307%.     

超宽带Er3+-Tm3+共掺石英光纤放大器串联特性分析

在不影响Er3 -Tm3 共掺石英光纤超宽带放大特性的前提下,提出了利用串联的方式提高系统功率增益的方法,并模拟仿真了两级串联此种石英光纤的工作特性.仿真结果表明:两级串联的Er3 -Tm3 共掺石英光纤的功率增益可达20 dB,基本上解决了其宽带放大但只具有低功率增益的特性.通过与现阶段其它宽带光放大器比较,可以看出采用此种方式的Er3 -Tm3 共掺石英光纤放大器无论在系统复杂度还是在成本方面都具有明显优势.     

无电极放电灯的发展动态

无电极放电灯是新一代电光源，具有结构简单、无电极、高光效、高显色性能和长寿命等特性，已发展成为无电极荧光灯、无电极金属卤化物灯和微波硫灯等几种类型。本文主要介绍这些无电极放电灯的发光原理、放电类型、灯的结构、特性和发展动态。     

Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applications

This work is addressed to the investigation of the electro-thermal performance of RF-LDMOS transistors integrated in TF-SOI, TF-SOS and thinned TF-SOS substrates by means of numerical simulations. Reported experimental trap density, carrier mobility and capture cross-section values have been used together with sapphire datasheet thermal properties, in order to provide accurate simulation results. It is found that subthreshold characteristics are the same for all the analysed substrates while blocking-state, on-state and power dissipation process depends on the substrate type.     

对称美与机械设计创新初探

在简要介绍对称性科学美学思想理念的基础上，指出了用对称性美学思想指导机械设计创新的基本思路，并介绍了具体的创新案例。     

Oscillation Test Strategy: A Case Study

In this paper is proposed as a case study the test of a folded cascode operational amplifier using the Oscillation Test Strategy (OTS). This Operational Amplifier (OPA) is chosen in order to evaluate the ability of OTS to test a more complex amplifier than those previously reported. To obtain comparative results, three different types of single-OPA oscillators are employed.A catastrophic-fault injection procedure is carried out using SPICE. In all oscillators, simulation results show that the fault coverage obtained is lower than those previously obtained by many researchers for simpler amplifiers. This fact suggests that OTS might be inconvenient for applications using the OPA targeted in this work and requiring high fault coverage.     

微波固体有源传感器研究

本文讨论微波固体源作为测量电量、非电量有源传感器的工作原理。指出频带反射高Q腔稳耿氏振荡器适于作为有源传感器,用它取样测量电容介质(ε_τ(?)2～3)薄膜的厚度,量程:200μm,分辨率≤±0.1μm,介质微扰稳频腔产生的振荡器频偏⊿f与其厚度d具有很好的线性关系。频偏的实验值与微扰方法计算值吻合良好。     

用于长距离无再生光孤子通信系统的光纤放大器及光纤

本文由长距离无再生光孤子通信的各种基本限制及考虑出发,提出了对光纤放大器及光纤的要求以及今后研究工作的方向。文中公式都采用了实用工程单位以利计算。     

100 Å-thick tunnel junction by double impurity doping liquid phase epitaxy for V-band TUNNETT oscillation

The tunnel injection transit time (TUNNETT) diodes with p⁺p⁺n⁺n⁻n⁺ structure were fabricated by liquid phase epitaxy (LPE). About 100 Å tunnel junction (p⁺n⁺) was successfully prepared by the double impurity diffusion of Ge and S during LPE growth. Continuous wave (CW) oscillation was realized at 51.520 GHz in the V-band cavity with the phase noise of −60 dBc/Hz at 1 kHz bandwidth.     

超长距、超大容量DWDM系统解决方案探讨

对上海贝尔阿尔卡特推出的超长距离、超大容量DWDM系统解决方案——1626LM系统设备的特点，从技术方面和系统角度作了较详细的分析。