MOSFET模型参数的全域优化提取

本文采用最优化方法中的 L-M 方法,对 MOSFET 直流模型参数进行优化提取。采用了亚闽区、线性区和饱和区直流特性作为目标函数,并且考虑源漏串联电阻对 MOS 直流特性的影响。本文对 MOS 输出特性关于串联电阻的灵敏度分析,说明在线性区考虑它们的必要性。文章最后给出了实测结果与提取参数计算结果的比较。     

基于CCⅡ±的MOSFET-C四阶LF低通滤波器平衡结构的分析与仿真

本文在全集成MOSFET电流传输器CCⅡ±构成的积分电路平衡结构的基础上，提出了全MOSFET－C四阶LF低通滤波器平衡模式，对其消除非线性因素进行了理论分析，并利用SPICE（Ⅱ）通用模拟电路程序，对CCⅡ±采用非理想电路模型，对一个四阶LF低通滤波器二种平衡模式的相频特性和幅频特性进行了仿真分析和比较，得出了几点实用的结论。     

直流开关电源的研究

本文以Dickson电荷泵的基本原理为出发点，研冤了一种输出是负电压的开关电容电源电路参考功率MOSFET的电容模型通过增大驱动电路的电流减小了开关管的上升延时．提高了开关动作的速度，使转换效率得到明显提高。同时，针对开关电容的充放电特点，采用非交叠(nonoverlap-ping)时钟控制信号避免了由于时钟交叠而造成的两级开关同时导通的现象，提高了电路的稳定性和可测试性采用压控震荡器频率的变化来控制功率开关管的开关时间，有效地控制了由于负载变化而造成的输出电压不稳定等现象。此电路结构简单，性能优良，易于集成，可广泛应用于输出负电压的电源产品中。     

工作在动态阈值MOS的特性研究

通过将衬底和栅极连接在一起实现了MOSFET的动态阈值,DTMOS与标准的MOSFET相比具有更高的迁移率,在栅极电压升高时DTMOS阈值电压会随之降低,从而获得了比标准的MOSFET大的电流驱动能力。DTMOS是实现低电压、低功耗的一种有效手段。     

灵巧功率集成电路中功率MOSFET电流感知方法的研究

功率器件的过流保护是提高灵巧功率集成电路可靠性的关键,采用不同的电流检测方法会有不同的误差。通过对功率MOSFET的电流检测技术的研究,对比分析了几种常用的电流感知方法,重点阐述了应用在灵巧功率集成电路中感知高压功率器件电流的SenseFET结构的工作原理,并分析了影响电流检测准确度的误差源。可以为设计高性能的电流检测过程提供参考。     

3D Monte Carlo Modeling of Thin SOI MOSFETs Including the Effective Potential and Random Dopant Distribution

We use the effective potential to include quantum mechanical effects in thin SOI MOSFETs simulated with 3D Monte Carlo. We explore the role of discrete dopant distributions on the threshold voltage of the device within the framework of the effective potential by examining the current-voltage behavior as well as the electron distributions within the device. We find that simulations with the effective potential produce a similar shift in current as classical simulations when the dopants are considered to have a random discrete distribution instead of a uniform distribution.     

On the Electron Transient Response in a 50 nm MOSFET by Ensemble Monte Carlo Simulation in Presence of the Smoothed Potential Algorithm

The inclusion of a smoothed potential algorithm within the Ensemble Monte Carlo method (EMC) to account for quantization effects in the inversion layer of a silicon n-MOSFET has been discussed by several authors. Most of the data reported deal with steady state terminal current, transconductance, and capacitance. Within this approach, the electric field acting on each particle is computed from the smoothed potential, which introduces a potential barrier underneath the gate region that pushes the carriers away from the interface, thus accounting for space quantization effects. However, in the EMC method, the electric field at the interface is also used to compute the displacement charge/current during the transient regime. In the implementation of the smoothed potential algorithm, care must be taken when computing this component of the total gate charge. We distinguish between two differently computed electric fields, one from the smoothed potential used for the charge transport and the other one computed from the real potential, as obtained from the solution of Poisson's equation, and used for the displacement charge. We propose this procedure in order to properly include space quantization effects, and at the same time avoid the inaccuracy introduced by the smoothed potential in the displacement charge.     

场效应管逆变弧焊电源的研制

本文介绍了场效应管逆变弧焊电源的工作原理及其驱动电路的设计,讨论了该电源系统的控制方式。所研制的电源设有空载分频、过流和过热保护功能,能够输出恒流和恒流带外拖的两种外特性,适用于 TIG 焊和手工电弧焊。     

0.35 μm CMOS T/R Switch for 2.4 GHz Short Range Wireless Applications

This paper describes the design and implementation of a transmit/receive switch for 2.4 GHz ISM band applications. The T/R switch is implemented in a 0.35 m bulk CMOS process and it occupies 150 m · 170 m of die area. A parasitic MOSFET model including bulk resistance is used to optimize the physical dimensions of the transistors with regard to insertion loss and isolation. The measured insertion loss is 1.3 dB without port matching. Simulations using measured s-parameters indicate that an insertion loss of 0.8 dB can be obtained with a conjugate match. The measured isolation is 42 dB and the maximum transmit power is 16 dBm.     

功率MOSFET器件单粒子烧毁252Cf源模拟试验研究

本工作涉及利用²⁵²Cf源进行辐射效应试验研究的方法。结合功率MOSFET器件单粒子烧毁测试技术，对功率MOSFET器件辐射效应进行模拟试验研究。研究结果表明：在空间辐射环境下，功率MOSFET器件尽量使用在低电压范围内；在电路设计中附加必要的限流电阻是1种十分有效的抗单粒子烧毁措施。