光子计数位置灵敏探测器畸变多项式校正

采用多项式校正方法对光子计数位置灵敏探测器成像畸变进行校正。介绍光子计数位置灵敏探测器工作原理并分析其畸变产生原因;介绍多项式校正原理,并给出光子计数位置灵敏探测器畸变多项式校正流程;采用该方法对两种不同畸变程度的基于楔条形阳极该类探测器进行了畸变校正,校正后残余误差分别为2.5pixel和1.2pixel。实验结果表明,多项式校正法能够有效校正光子计数位置灵敏探测器成像畸变。     

板条增益介质波前畸变诊断方法

对波前重构算法中的区域法进行了改进,使其能够应用于板条增益介质的波前畸变诊断。利用该方法对47块Nd: YAG板条增益介质沿厚度方向波前畸变进行测量,指出镀膜和加工等环节对增益介质的波前畸变可能造成的影响。按照波前畸变峰谷（PV）值对测量结果进行了统计,结果表明:增益介质造成的静态波前畸变参差不齐,测量样本中静态畸变PV值最多可达5 m以上,且仅有4.1%的增益介质静态畸变PV值小于1 m。通过选取某些增益介质使之级联,测量其组合波前畸变,发现在系统中使用两块波面互补的增益介质有助于减小系统的静态波前畸变。     

外场下GaAs/AlGaAs超晶格中载流子的动力学行为

基于分立漂移模型研究了磁场对载流子在弱耦合GaAs/AlAs超晶格中的动力学行为的影响。研究表明磁场较小时超晶格中载流子的集聚形成电场畴,该电场畴的周期移动引起电流振荡的产生,随着磁场的增加系统中形成的电场畴变得稳定,电流振荡也逐渐消失。因此,磁场控制下系统的状态可以从动态转变到稳定态。受交流电场驱动时,由于内部电流振荡信号和外部交流信号的耦合,载流子运动展现出很多的非线性行为。     

Permanent Magnetic Properties of Melt-Spun YCo5Cx Ribbons

Ribbons of nominal compositions YCo5 Cx （x = 0, 0.2, 0.4, 0.6） are prepared by melt spinning at surface velocities v = 5, 10, 15, 20, 25, 30 and 35 m/s. YCo5 ribbon is crystallized in a single YCo5 phase of hexagonal CaCu5 structure. A small quantity of YCoC2 phase appears in the ribbons with C addition besides the YCo5 phase. With the increase of x the lattice constant c increases and a along with the unit cell volume decreases. The largest values of iHc = 888 kA/m and （BH）max = 58.4 k Jim3 at present for the YCo5 ribbon system were obtained with x = 0.4 and v = 20 m/s. The improvement of the permanent magnetic properties is rooted in the refinement of the microstructure and the appearance of the YCoC2 phase which can act as domain wall pinning centers.     

二维复式声子晶体中基元配置对声学能带结构的影响

研究了二维复式声子晶体中基元配置对其声学能带结构的影响,发现当声子晶体的基元配置改变时,声子晶体的不可约布里渊区也会改变,而且部分能带的极值不再在高对称线上.特别地,在某些基元配置下,不可约布里渊区扩大为整个第一布里渊区.因此,对于对称性较高的复式晶格声子晶体,可用通常的方法得到能带结构,而对于对称性较低的复式晶格结构声子晶体,只有采用对整个第一布里渊区进行研究的方法,才能获得可信的能带结构及带隙.     

具有本征低晶格热导率的硫化银快离子导体的热电性能

硫化银(Ag_2S)是一种典型的快离子导体材料,前期关于Ag_2S的研究主要集中在光电和生物等领域.最近的研究表明, a-Ag_2S具有和金属一样的良好延展性和变形能力.但是, Ag_2S的热电性能尚无公开报道.本工作合成了单相Ag_2S化合物,系统研究了其在300—600 K范围的物相变化、离子迁移特性和电热输运性质.研究发现, Ag_2S在300—600 K温度区间表现出半导体的电输运性质.由于单斜-体心立方相晶体结构转变, Ag_2S的离子电导率、载流子浓度、迁移率、电导率、泽贝克系数等性质在455 K前后出现急剧变化.在550 K, Ag_2S的功率因子最高可达5μW·cm~(–1)·K~(–2). Ag_2S在300—600 K温度区间均表现出本征的低晶格热导率(低于0.6 W·m~(–1)·K~(–1)). S亚晶格中随机分布的类液态Ag离子是导致b-Ag_2S体心立方相具有低晶格热导率的主要原因.在573 K, Ag_2S的热电优值可达0.55,与Ag_2Se, Ag_2Te, CuAgSe等已报道的Ag基快离子导体热电材料的性能相当.     

（2＋1）-Dimensional Envelope Solitons in Nonlinear Magnetic Metamaterials

The dynamics of nonlinear magnetoinductive waves in a two-dimensional monoatomic lattice of Split ring resonators （SRRs） with Kerr nonlinear interaction between nearest neighbors is studied analytically. The soliton excitation genuine of the discreteness and nonlinearity in such a system based on an extended quasidiscreteness approach are obtained.     

纳米二氧化钛的制备及Eu~(3+)掺杂发光研究

以钛酸四丁酯为前驱物,采用溶胶-凝胶法制备了四种不同配方Eu3+掺杂的TiO2纳米晶.利用扫描电镜(SEM)、EDS能谱、光致发光光谱对样品的形貌、成份及性能进行了表征.研究了退火温度、稀土Eu3+离子掺杂摩尔分数、溶剂乙醇量等对发光性能的影响,并对其发光机理进行了探讨.结果表明:稀土Eu3+掺杂TiO2纳米晶样品,掺杂均匀、颗粒大约在30～80nm;从EDS能谱分析可得Ti:O原子个数比并不是按化学计量TiO2满足1:2,这是因为在TiO2中形成的是Ti-O-Ti键,Eu3+离子很可能取代了Ti4+离子,同时又形成了氧空位,表明稀土Eu3+离子进入TiO2晶格中;样品的主发射峰在614nm(5D0→7F2)处发光最强,且在593nm(5D0→7F1)处出现了属于磁偶极跃迁的发射峰,制备Eu3+∶TiO2纳米晶的组分、退火温度、溶剂乙醇的量不同,发射光谱的强度也不同.     

Thermal transport property of investigated by molecular Ge34 and d-Ge dynamics and the Slack＇s equation

In this study, we evaluate the values of lattice thermal conductivity κL of type Ⅱ Ge clathrate （Ge34） and diamond phase Ge crystal （d-Ce） with the equilibrium molecular dynamics （EMD） method and the Slack＇s equation. The key parameters of the Slack＇s equation are derived from the thermodynamic properties obtained from the lattice dynamics （LD） calculations. The empirical Tersoff＇s potential is used in both EMD and LD simulations. The thermal conductivities of d-Ge calculated by both methods are in accordance with the experimental values. The predictions of the Slack＇s equation are consistent with the EMD results above 250 K for both Ge34 and d-Ge. In a temperature range of 200-1000 K, the κL value of d-Ge is about several times larger than that of Ge34.     

Microstructure and strain films using in-plane grazing analysis of GaN epitaxial incidence x-ray diffraction

This paper investigates the major structural parameters, such as crystal quality and strain state of （001）-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in-plane grazing incidence x-ray diffraction technique. The results are analysed and compared with a complementary out-of-plane x- ray diffraction technique. The twist of the GaN mosaic structure is determined through the direct grazing incidence t of （100） reflection which agrees well with the result obtained by extrapolation method. The method for directly determining the in-plane lattice parameters of the GaN layers is also presented. Combined with the biaxial strain model, it derives the lattice parameters corresponding to fully relaxed GaN films. The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established, reaching to a maximum level of-0.89 GPa.