Supplement to the paper “A collection of 505 papers on false or unconfirmed ferroelectric properties in single crystals,ceramics and polymers [Front. Phys. 14(6), 63301 (2019)]”

This supplement contains 222 (angel number) further papers on false or unconfirmed ferroelectric properties in single crystals, ceramics and polymers and only concerns bulk materials. Thus, the number of such papers has reached huge value 727. The papers marked in red have drastically broken the principles of symmetry because they reported the existence of ferroelectricity in crystals without the polar axis.     

The work function of hydrothermally synthesized UO2 and the implications for semiconductor device fabrication

The photoelectric work function of nearly stoichiometric (111) and (100) hydrothermally grown UO₂ was measured to be 6.28 ± 0.36 eV and 5.80 ± 0.36 eV, respectively. Candidate metals for electrical contacts are identified for both rectifying and non‐rectifying contacts based on work function, lattice compatibility, and electrical conductivity.     

Coadsorption of water and CO molecules on Ru(0 0 1) at high CO coverages: comparisons with a Ru(0 0 1) electrode surface

The coadsorption of carbon monoxide (CO) and water molecules on a Ru(0 0 1) surface has been studied by infrared spectroscopy, LEED and STM. At high CO coverage phases, a 2×2-(2CO+D₂O) structure was observed on both UHV and electrode surfaces. Electrode potential dependent structures from CO and water adlayers on an electrode surface were reproduced on a UHV surface by controlling molecular orientations of the first layer and second over-layer water molecules. At lower CO coverages, a CO band center showed coverage dependent shift down to 1444 cm⁻¹ due to an electron transfer from a lone pair of a water molecule to CO 2π^*.     

Sensitivity of heavy-ion-induced single event burnout in SiC MOSFET

The energy deposition and electrothermal behavior of SiC metal-oxide-semiconductor field-effect transistor(MOSFET)under heavy ion radiation are investigated based on Monte Carlo method and TCAD numerical simulation.The Monte Carlo simulation results show that the density of heavy ion-induced energy deposition is the largest in the center of the heavy ion track.The time for energy deposition in SiC is on the order of picoseconds.The TCAD is used to simulate the single event burnout(SEB)sensitivity of SiC MOSFET at four representative incident positions and four incident depths.When heavy ions strike vertically from SiC MOSFET source electrode,the SiC MOSFET has the shortest SEB time and the lowest SEB voltage with respect to direct strike from the epitaxial layer,strike from the channel,and strike from the body diode region.High current and strong electric field simultaneously appear in the local area of SiC MOSFET,resulting in excessive power dissipation,further leading to excessive high lattice temperature.The gate-source junction area and the substrate-epitaxial layer junction area are both the regions where the SiC lattice temperature first reaches the SEB critical temperature.In the SEB simulation of SiC MOSFET at different incident depths,when the incident depth does not exceed the device's epitaxial layer,the heavy-ion-induced charge deposition is not enough to make lattice temperature reach the SEB critical temperature.     

Photon counts modulation in optical time domain reflectometry

The quantum fluctuation of photon counting limits the field application of optical time domain reflection. A method of photon counts modulation optics time domain reflection with single photon detection at 1.55 μm is presented. The influence of quantum fluctuation can be effectively controlled by demodulation technology since quantum fluctuation shows a uniform distribution in the frequency domain. Combined with the changing of the integration time of the lock-in amplifier, the signal to noise ratio is significantly enhanced. Accordingly the signal to noise improvement ratio reaches 31.7 dB compared with the direct photon counting measurement.     

波粒二象性和量子不确定性之间的关系:纯态到混合态

研究了波粒二象性和量子不确定性之间的关系,可见度表达的是粒子的波动性,可预测性(predictability)表达的是粒子性,还有它们的起伏,这些量可以通过一个表达式联系起来.单光子纯态和混合态的测量,在实验上[PRA,85,022106]已经得到证明,但并没有给出中间态的情况,在此重点研究了纯态和混合态之间的状态,测量结果仍满足可见度、可预测性和它们的起伏的关系.     

上海光源XAFS线站时间分辨X射线激发发光谱实验系统

介绍了上海光源XAFS线站（BL14W1）的时间分辨X射线激发发光光谱（TRXEOL）实验系统。该系统基于时间相关单光子计数法的原理设计,以同步辐射光源的脉冲特性及其良好的时间结构为基础,通过集成定时系统、光谱仪系统和核电子学系统,在国内同步辐射装置上首次实现了TRXEOL实验方法。定时系统提供同步触发电脉冲,用来标志X射线脉冲打到样品上的时刻,同步精度约6 ps,延时分辨率5 ps;光谱仪经光电探测器把样品发光信号转换成电脉冲,核电子学系统对定时电脉冲和发光电脉冲之间的时间差进行统计分析,可得到样品的发光衰减曲线,再结合光谱仪的扫描控制和数据获取系统,可得到样品的TRXEOL光谱。利用该实验系统可以测量发光样品的普通XEOL光谱、发光衰减曲线和TRXEOL光谱。用ZnO纳米线样品,进行了实验验证。实验得到的普通XEOL光谱能够明显区分该样品在390和500 nm处的两个发光中心;得到的发光衰减曲线能够区分小于2 ns的快发光过程和200 ns的慢发光过程;分别在0～1, 2～200和0～200 ns时间窗口内测量得到了ZnO纳米线样品的TRXEOL光谱,在这3个发光时间带内得到了对应的发光信息;ZnO纳米线样品发光衰减曲线快发光峰的半高宽约为0.5 ns,证明了TRXEOL系统的最小时间分辨率小于1 ns。该系统在国内同步辐射装置上提供了用于研究发光材料的TRXEOL实验方法,该方法与发光模式的XAFS方法相结合,可更深入的研究发光材料的发光行为。整个实验平台操作简便、工作稳定可靠,不仅为发光材料的研究提供了研究手段,还为进一步开展发光模式XAFS和TRXEOL成像等实验方法提供技术前提。     

基于马赫-曾德尔干涉仪的单个光子操控

分别利用空间和光纤马赫—曾德尔干涉仪对空间和光纤传输中的单个光子的干涉现象进行了研究,干涉对比度可达到90％以上,实现了空间和光纤中的单个光子的路由操控。实验采用脉冲调制加衰减的方法产生单个光子,获得了每个脉冲中只包含0．1个光子的准单光子源。通过改变压电换能器的电压控制马赫—曾德尔干涉仪的单个光子在两个输出端的选择,实现了光子在节点上的路由。采用同步符合检测技术,利用重复频率为1kHz,脉冲宽度为100ns的同步信号对输出信号进行符合,实现了量子效率高于70％,暗计数小于0．2s^-1的单光子高灵敏度检测,观测到了单个光子在相位操控下出射到两个输出端的有序分配现象。验证了基于马赫—曾德尔干涉仪的单个光子路由操控实现的可能性。     

小麦超弱延迟发光测试系统

应用一种新型高灵敏度光电倍增管作为传感器,设计一套用于检测小麦超弱发光的光子计数测量系统,实现对储藏小麦超弱发光的定量测量.适当安排LED阵列分布,设计适合延迟发光需要的照明系统,通过对白光LED光源辐射等效单光子能量和流明效率的计算,建立起光照度与光子数强度之间的联系,实现了光源照射强度与样品延迟发光强度之间的定量比较.对不同光照强度下小麦样品延迟发光的测试和双曲函数拟合,探讨了小麦超弱延迟发光双曲函数拟合参量的变化规律;发现不同照射强度下存在不同的饱和照射时间;小麦超弱延迟发光强度曲线符合双曲衰减规律,超弱延迟发光持续时间达数小时.通过对光照时间和数据采集时间的精确控制,以及在拟合函数中设置延迟时间参量因子,实现了延迟发光测试数据对应时间点的精确标定.     

大空间三向组合平板网架研究

利用中心节点、交叉梁、三角形拉杆和空心板所构成承力单元的组合以及内部支承柱的自由布置,本文提出了一种新型大空间三向组合平板网架结构。相关的TDGS分析系统针对原型试验取得了较好的模拟效果。通过引入柱的局部影响区域这一全新概念,系统总结了加入内部支承柱前后网架结构的内力和变形规律,进而为进一步的工程应用提供了可行性建议。