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21.
Resilient metal spring silicone-matrix conducting composites for separable interconnections in electronics were fabricated
by the impregnation of silicone into a preform comprising randomly oriented C-shaped Cu-Be springs and a small proportion
of Sn-Pb solder, which served to connect the springs at some of their intersections. Composites containing 6.1-9.8 vol.% total
filler exhibited volume electrical resistivity 0.5-1.0 mΩ.cm and contact resistivity (with copper) 11-17 mΩ.cm2. A compressive stress of about 30 kPa was needed for the low contact resistivity to be reached. The volume 17-26% and the
contact resistivity increased by 5% after heating in air at 130-150°C for seven days. Composites containing <9 vol.% total
filler showed no stress relaxation for seven days at 6.0% strain. 相似文献
22.
Rui Morimoto Chisato Yokomori Akiko Kikkawa Akira Izumi Hideki Matsumura 《Thin solid films》2003,430(1-2):230-235
In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiNx films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O2 oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiNx prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiNx films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm−1 of OFF leakage current and ON/OFF ratio of 107–108 are realized, i.e. the devices can operate similarly to conventional thermal CVD process. 相似文献
23.
In keeping with the advance of more compact and more power-saving electronic equipment, the demand is increasing for smaller and more efficient switching power supply. Therefore, it is necessary to provide the adequate magnetic power ferrite materials to satisfy the demand. Such ferrite materials have to meet the following main requirement: 1) high initial permeability (μ i ); 2) high saturation magnetic induction (Bs); 3) high Curie temperature (Tc); 4) high electrical resistivity (ρ ); 5)… 相似文献
24.
N. I. Bobyr’ A. P. Grabovskii A. V. Timoshenko A. P. Khalimon 《Strength of Materials》2006,38(1):92-98
Within framework of the continual fracture mechanics, we describe the engineering approach to the assessment of scattered
microdamage accumulation kinetics in metallic materials under elastoplastic loading conditions in case of plane stressed state.
Automatized experimental stand and the respective investigation technique are discussed. The stand has been developed based
on modification of the UMé-10T electromechanic test machine. State-of-the-art computer technologies and microprocessing hardware
are incorporated in the stand automation. We present the technique of experimental assessment of damage accumulation kinetics
in metallic structural materials under complex elastoplastic loading conditions with account of two different fracture (cleavage
and shear) processes, which technique is based on measuring the specific electric resistance of the specimen.
__________
Translated from Problemy Prochnosti, No. 1, pp. 128–137, January–February, 2006. 相似文献
25.
B. Wilthan G. Pottlacher 《稀有金属(英文版)》2006,25(5):592-596
1. Introduction Metal working industry needs accurate thermo- physical properties of liquid metals and alloys as input data for different simulation routines to im- prove the performance of their products. Within this paper we continue the systematic investigation of the dependence of emissivity of binary alloys on the relative concentration of the constituent elements (for a previous paper see [1]). 2. Experimental method A fast ohmic pulse heating technique is applied to heat metallic wire-s… 相似文献
26.
T. Jeevananda Siddaramaiah Taek Su Lee Joong Hee Lee O. M. Samir R. Somashekar 《应用聚合物科学杂志》2008,109(1):200-210
Polyaniline/carboxylated multi-walled carbon nanotube (PAni/c-MWNT) nanocomposites have been synthesized by micellar aided emulsion polymerization with various c-MWNTs compositions, viz., 0.5, 1, 5, and 10 wt %. The microcrystalline parameters such as the nanocrystal size (〈N〉), lattice strain (g), interplanar distance (dhkl), width of the crystallite size distribution, surface weighted crystal size (Ds), and volume of the ordered regions were calculated from the X-ray data by using two mathematical models, namely the Exponential distribution and Reinhold distribution methods. The effects of heat ageing on the microcrystalline parameters of the PAni/c-MWNT nanocomposites were also studied and the results are correlated. The thermal stability and electrical resistivity of the PAni/c-MWNT nanocomposites were examined with thermogravimetric analysis (TGA) and a conventional two-probe method. The TGA data indicate that the thermal stability of the nanocomposites improved after the incorporation of c-MWNTs. The influence of temperature on the resistivity of the nanocomposites was also measured. © 2008 Wiley Periodicals, Inc. J Appl Polym Sci 2008 相似文献
27.
28.
用常规电阻率测井资料确定水淹层的剩余油饱和度 总被引:7,自引:0,他引:7
油田综合含水越来越高,利用电阻率测井资料确定地层的剩余油饱和度变得非常困难。针对这一问题,提出了确定地层水民阻率和含油饱和度的方法。(1)利用已知的地怪水分析资料,采用井下自然电位刻度,井间对经和双自然电位一方法来示准地层水混合电阻率,然后利用相邻井相同地层的电阻率对比方法求含水饱和度。(2)利用电阻率的横向探测特性,避开阿尔奇公式中m、a选择上的困难,采用横向法计算水淹层目前的含水饱和度。利用以 相似文献
29.
In the early eighties, at the Boris Kidrich Institute Vincha, a method for measuring specific heat and electrical resistivity of electrical conductors in the millisecond resolution range was developed for measurements from room temperature to 1900 K. Over a period of nearly 10 years, the method was applied to different materials, including pure metals, ferrous, and nickel/ chromium alloys, and to the characterization of candidate materials for thermophysical property reference standards. This paper describes the method and reviews the results obtained in specific heat and electrical resistivity studies of ferromagnetic and other materials. The paper also demonstrates capabilities of the method for describing phase transitions or anomalies in pure metals (Fe, Co, Ni) or alloys (Nichrome, austenitic stainless steel).Paper presented at the Second Workshop on Subsecond Thermophysics, September 20–21, 1990, Torino, Italy. 相似文献
30.
利用射频化学气相沉积法,通过硼的掺杂,在石英玻璃衬底上生长出P型微晶金刚石薄膜,范德堡法的测试表明,我们得到的薄膜最小电阻率为4×10-2Ω.cm,最大空穴迁移率为50cm/V.s;从电阻率与温度关系近似计算出杂质激活能 相似文献