超细NaY分子筛的深度脱铝

通过优化和组合不同脱铝补硅方法,依次经氟硅酸铵处理、600oC水热处理、硅溶胶+草酸处理和800oC水热处理过程,成功实现了200nm超细NaY分子筛的深度脱铝,最终产品骨架硅铝比高达27.3,比表面积为581.9m2/g,分子筛结晶度保持在65%以上.结果表明,对于超细NaY分子筛脱铝,第一步采用氟硅酸铵进行部分缺陷修补尤为重要.根据分子筛晶粒尺寸不同,需严格控制氟硅酸铵用量和处理次数.当晶粒为200nm时,氟硅酸铵与分子筛骨架铝的摩尔比为0.16,处理一次较为适宜.在连续脱铝过程中及时补修脱铝产生的缺陷是保障超细NaY分子筛成功脱铝的关键,而采用氟硅酸铵、硅溶胶、800oC高温水热处理,可有效实施这种骨架修正作用.     

XANES研究Al2O3包覆LiNi0.4Co0.2Mn0.4O2材料的稳定性

采用溶胶凝胶水解法在LiNi0.4Co0.2Mn0.4O2(NCM)表面包覆了0.5 wt%Al2O3.透射电镜(TEM)表明在NCM表面形成了均匀的Al2O3包覆层;分别采用恒电位极化及热重分析(TG)研究了包覆前后NCM的析氧特性;采用X射线吸收近边结构谱(XANES)研究了包覆前后O的电子结构.结果表明,包覆后的NCM析氧量更少;Al2O3包覆使得NCM表面层中与金属3d轨道杂化的O比例减少,而更稳定的、与金属4sp轨道杂化的O比例增加.这些因素导致Al2O3包覆后的NCM更加稳定、安全性更高.     

ChemInform Abstract: Structural Characterization of Moganite‐Type AlPO4 by NMR and Powder X‐Ray Diffraction.

A new high‐pressure AlPO₄ phase obtained at 5 GPa and 1500 °C is characterized by synchrotron powder XRD and MAS NMR spectroscopy.     

ChemInform Abstract: Single-Crystal Structure of Partially Dehydrated Partially Mg2+-Exchanged Zeolite Y (FAU), [Mg30.5Na14(H2O)2.5] [Si117Al75O384]-FAU.

The crystal structure and the distribution and coordination geometry of Mg²⁺ ions in the title zeolite are determined by single crystal XRD.     

高容量正极材料0.08LiCo0.75Al0.25O2-0.92LiNiO2的合成与电化学性能研究

在恒定pH值下将层状钴铝双羟基复合金属氧化物(CoAl-LDH)均匀包覆在球状Ni(OH)2表面,与LiOH.H2O混合均匀后,经高温煅烧制得钴铝酸锂包覆镍酸锂0.08LiCo0.75Al0.25O2-0.92LiNiO2正极材料.电化学测试表明,0.08LiCo0.75Al0.25O2-0.92LiNiO2正极比容量高,具有良好的倍率性能和循环寿命,其0.1C放电比容量为211 mAh·g-1,0.5C放电比容量为195.6 mAh·g-1,3C放电比容量为161 mAh·g-1,0.5C 30周期循环后容量保持率为93.2%,明显优于LiNiO2和钴酸锂包覆镍酸锂0.08LiCoO2-0.92LiNiO2正极.     

Ni/γ-Al2O3催化剂的2-MF气相加氢合成2-MTHF性能研究

2-甲基四氢呋喃(2-MTHF)是极具市场潜力的生物燃料、绿色溶剂和化学中间体.采用浸渍法制备Ni/γ-Al2O3催化剂,在固定床反应器评价其2-甲基呋喃(2-MF)气相加氢合成2-甲基四氢呋喃(2-MTHF)反应性能.通过XRD、N2等温吸附-脱附、H2-TPR、NH3-TPD、TEM、H2吸附和XPS对催化剂结构和表面性质进行表征,研究Ni负载量、焙烧温度和反应条件对催化剂性能的影响规律.结果表明:Ni/γ-Al2O3催化剂的Ni金属面积、晶粒尺寸、反应温度和压力都会影响2-MF的转化率;孔结构、酸量和反应温度是影响2-MTHF选择性的主要原因,平均孔径大、酸量大和适宜的反应温度有利于提高2-MTHF选择性. 400℃焙烧的负载量为15%的Ni/γ-Al2O3催化剂, Ni金属面积大、晶粒尺寸小、总酸量多,催化剂表面的金属活性中心与酸性中心协同作用促进了2-MF呋喃环上C=C加氢生成2-MTHF,性能较优.在2 MPa、100℃、WHSV=2.7 h-1、H2/2-MF=6.4的条件下,该催化剂上2-MF转化率为99.8%, 2-MTHF选择性为98.0%,催化剂可以稳定运行40 h.     

Complexes of aluminium(III) with isoquercitrin: spectroscopic characterization and quantum chemical calculations

The composition and conformation of complexes of aluminium(III) with isoquercitrin (Iso) have been studied in methanol solution. This molecule presents two potential chelating sites in competition. UV–Vis spectroscopy provides evidence of three different species in neutral solution: Al(Iso)²⁺ Al(Iso)₂ ⁺ and Al₂(Iso)³⁺. This last one is formed only if a great quantity of Al(III) is presented in the medium. The first site involved in complexation is the 5-hydroxy-4-keto group. FT-Raman spectroscopy has allowed to confirm this mechanism. The stability constants of this complexes have been determined using the program. In acidic condition, only the first complex is obtained. In alkaline medium, Al(Iso)⁺ and Al(Iso)₂ ⁻ complexes are formed, the catechol group is then the chelating site involved in these species To propose a molecular conformation for the free isoquercitrin and its complexes in neutral medium, both semiempirical molecular orbital and DFT calculations have been performed. It has been showed that the participation of cynnamoyl and benzoyle mesomeric forms stabilise the structure of Al(Iso)²⁺. The structural models have been validated by the good agreement between theoretical and experimental electronic spectra.     

Preparation of crack-free ZrO2 membrane on Al2O3 support with ZrO2–Al2O3 composite intermediate layers

To develop porous alumina supported MF ZrO₂ membranes, ZrO₂–Al₂O₃ composite intermediate layers are considered in order to decrease stress creation during the processing and avoid cracks formation. The relation between distortion stress and sintering shrinkage was experimentally studied. And the cracks formation mechanism was qualitatively evaluated and discussed. Finally, crack-free YSZ membrane with pore size of 0.16 μm on the two ZrO₂–Al₂O₃ intermediate layers possessing a gradient composition was successfully prepared and characterized.     

Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AIN/GaN and AIGaN/GaN heterostructure Schottky diodes

Ni/Au Schottky contacts on AlN/GaN and AlGaN/GaN heterostructures are fabricated. Based on the measured current-voltage and capacitance-voltage curves, the polarization sheet charge density and relative permittivity are analyzed and calculated by self-consistently solving Schrodinger＇s and Poisson＇s equations. It is found that the values of relative permittivity and polarization sheet charge density of AlN/GaN diode are both much smaller than the ones of AlGaN/GaN diode, and also much lower than the theoretical values. Moreover, by fitting the measured forward 1-V curves, the extracted dislocations existing in the barrier layer of the AlN/GaN diode are found to be much more than those of the AlGaN/GaN diode. As a result, the conclusion can be made that compared with AlGaN/GaN diode the Schottky metal has an enhanced influence on the strain of the extremely thinner AlN barrier layer, which is attributed to the more dislocations.     

Silicon nanoparticle charge trapping memory cell

A charge trapping memory with 2 nm silicon nanoparticles (Si NPs) is demonstrated. A zinc oxide (ZnO) active layer is deposited by atomic layer deposition (ALD), preceded by Al₂O₃ which acts as the gate, blocking and tunneling oxide. Spin coating technique is used to deposit Si NPs across the sample between Al₂O₃ steps. The Si nanoparticle memory exhibits a threshold voltage (V_t) shift of 2.9 V at a negative programming voltage of –10 V indicating that holes are emitted from channel to charge trapping layer. The negligible measured V_t shift without the nanoparticles and the good re‐ tention of charges (>10 years) with Si NPs confirm that the Si NPs act as deep energy states within the bandgap of the Al₂O₃ layer. In order to determine the mechanism for hole emission, we study the effect of the electric field across the tunnel oxide on the magnitude and trend of the V_t shift. The V_t shift is only achieved at electric fields above 1 MV/cm. This high field indicates that tunneling is the main mechanism. More specifically, phonon‐assisted tunneling (PAT) dominates at electric fields between 1.2 MV/cm < E < 2.1 MV/cm, while Fowler–Nordheim tunneling leads at higher fields (E > 2.1 MV/cm). (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)