Effects of Winding Attachment Positions on Output Characteristics of Flux‐Modulating Synchronous Machines

The flux‐modulating synchronous machine (FMSM) is a new type of multipole SM with nonoverlapping concentrated armature and field windings on the stator. This paper compares the output characteristics of two FMSMs through finite element analysis (FEA) and experiments. In both of the FMSMs, the attachment positions of the armature and field windings are swapped. To determine the reason for the discrepancies in their output characteristics, unsaturated inductances were calculated using a d‐‐q equivalent circuit. In addition, the calculated results of the inductances were confirmed through a visualization of the leakage fluxes using FEA. The results of the study show that the synchronous inductance can be reduced by attaching the armature winding to the air‐gap side of the stator teeth and that the reduction leads to an increase in output power.     

Effects of the film thickness and poling electric field on photovoltaic performances of (Pb,La)(Zr,Ti)O3 ferroelectric thin film-based devices

The ferroelectric photovoltaic (FPV) effect obtained in inorganic perovskite ferroelectric materials has received much attention because of its large potential in preparing FPV devices with superior stability, high open-circuit voltage (V_oc) and large short-circuit current density (J_sc). In order to obtain suitable thickness for the ferroelectric thin film as light absorption layer, in which, the sunlight can be fully absorbed and the photo-generated electrons and holes are recombined as few as possible, we prepare Pb_0.93La_0.07(Zr_0.6Ti_0.4)_0.9825O₃ (PLZT) ferroelectric thin films with different layer numbers by the sol-gel method and based on these thin films, obtain FPV devices with FTO/PLZT/Au structure. By measuring photovoltaic properties, it is found that the device with 4 layer-PLZT thin film (~300 nm thickness) exhibits the largest V_oc and J_sc and the photovoltaic effect obviously depends on the value and direction of the poling electric field. When the device is applied a negative poling electric field, both the V_oc and J_sc are significantly higher than those of the device applied the positive poling electric field, due to the depolarization field resulting from the remnant polarization in the same direction with the built-in electric field induced by the Schottky barrier, and the higher the negative poling electric field, the larger the V_oc and J_sc. At a -333 kV/cm poling electric field, the FPV device exhibits the most superior photovoltaic properties with a V_oc of as high as 0.73 V and J_sc of as large as 2.11 μA/cm². This work opens a new way for developing ferroelectric photovoltaic devices with good properties.     

Ultrasonic tomographic velocimeter for visualization of axial flow fields in pipes

An ultrasonic tomographic velocimeter to provide quantitative images of axial flow fields in pipes is developed and presented in this work. To detect the flow in various directions and positions, a novel transducer configuration strategy is proposed. All-in-one transducers are mounted in two sectional planes of the pipe. In each plane, N transducers are equally spaced along the circumference. Overlapped propagation paths are introduced by the configuration strategy, and the influence of the vortex flow can be eliminated theoretically by averaging the line velocities of the overlapped paths. To achieve a fast detection speed, the projection data is collected via an electrical scan in a fan-beam mode. After rearrangement and interpolation of the projection data, the parallel beam filtered back projection (FBP) algorithm is implemented to reconstruct the axial flow field. Numerical simulations with the theoretical velocity profiles were performed. The compensation method for the vortex flow is proved to be effective and necessary, and the number of transducers required for reconstruction of common flow profiles was estimated. Accordingly, an ultrasonic tomographic velocimeter consisting of 2×12 transducers was fabricated. Experiments were conducted in the straight pipe and downstream of a single bend pipe and compared with the computational fluid dynamics (CFD) simulation results. As demonstrated, the ultrasonic tomographic velocimeter was capable of visualizing both symmetric and asymmetric axial flow fields with high reliability.     

亲子乐园空调送风方式的数值模拟研究

大型综合室内亲子乐园属于高大空间,设有游乐设施和游戏的特殊性使得对空间的舒适性要求一致,但是送风气流遇阻严重,室内存在较多气流死角,影响室内空气质量和儿童健康。因此其空调设计不仅需要考虑温度、风速的空间均匀度,还要考虑各点的空气龄和PMV-PPD指标。以天津某亲子乐园为研究对象,利用scSTREAM软件对适用于该房间的辐射供冷加新风、置换通风、混合通风三种空调方式的送风效果进行数值模拟分析,从流场的均匀性、人员的热舒适性等方面对模拟结果进行探讨,研究结果表明辐射供冷加新风方式的空间均匀性和PMV指标最佳,混合通风方式的空气龄最小。     

论携号转网行为的私法规制

以电信用户入网协议为切入点,电信用户的携号转网行为应受到《合同法》《消费者权益保护法》等私法规范的保护与限制。该行为引起的格式条款解释、合同终止、违约责任、损失赔偿等问题,不能仅靠《电信条例》等公法规范来调整。应当积极引导广大消费者用户以私法领域相关规定为依据,转变争议解决思维,拓宽纠纷处理途径,合理选择维权手段,以保护自身合法民事权益,与行业监管部门共同推动电信行业有序发展。     

柠檬酸铋合成新工艺研究

针对现有柠檬酸铋制备工艺合成时间长、能耗高、产品纯度不高等不足,介绍了一种常温下制备柠檬酸铋的新工艺。新工艺制备时间短,制备的柠檬酸铋产品质量好,合成过程产生的废水可循环利用,废气经碱液循环吸收可生产硝酸钠副产品。     

High-resolution FIB-TEM-STEM structural characterization of grain boundaries in the high dielectric constant perovskite CaCu3Ti4O12

In this work, the grain boundaries composition of the polycrystalline CaCu₃Ti₄O₁₂ (CCTO) was investigated. A Focused Ion Beam (FIB)/lift-out technique was used to prepare site-specific thin samples of the grain boundaries interface of CCTO ceramics. Scanning transmission electron microscopy (STEM) coupled with energy dispersive X-ray spectrometry (EDXS) and Electron Energy Loss Spectroscopy (EELS) systems were used to characterize the composition and nanostructure of the grain and grain boundaries region. It is known that during conventional sintering, discontinuous grain growth occurs and a Cu-rich phase appears at grain boundaries. This Cu-rich phase may affect the final dielectric properties of CCTO but its structure and chemical composition remained unknown. For the first time, this high-resolution FIB-TEM-STEM study of CCTO interfacial region highlights the composition of the phases segregated at grain boundaries namely CuO, Cu₂O and the metastable phase Cu₃TiO_4.     

THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.