带碰撞避免机制的多址接入协议能量效率研究

研究了在自组织网络环境下CSMA/CA协议的能量消耗性能,并与传统的CSMA协议能耗性能进行比较.阐述了自组织网络中的隐藏终端和暴露终端问题,并分析CSMA/CA协议相对传统CSMA协议对该问题进行的改进.仿真结果表明,相对非坚持CSMA协议,CSMA/CA协议能够获得的能量效率更高,并且对网络负载的敏感性更低,在网络负载较高时也具有较高的能量效率.     

Thin‐film transistor mobility limits considerations

The mobility limiting scattering mechanisms for amorphous semiconductors and polar polycrystalline semiconductors are studied in the context of developing new high‐performance thin‐film transistor (TFT) channel layer materials for large‐area electronics. A physics‐based model for carrier transport in an amorphous semiconductor is developed to estimate the mobility limits of amorphous semiconductor TFTs. The model involves band tail state trapping of a diffusive mobility. Simulation reveals a strong dependence on the band tail density of states. This consideration makes it difficult to realize a high‐performance p‐type oxide TFT. A polar crystalline semiconductor may offer a higher mobility but is fundamentally limited by polar optical phonon scattering. Any crystalline TFT channel layer for practical large‐area applications will not be a single crystal but polycrystalline, and therefore, grain size and grain boundary‐dependent scattering will further degrade the transport properties.     

低复杂度递推信道估计联合均衡算法

精确的信道状态信息对单载波频域均衡(Sin gle carrier frequency domain equalization, SC FDE)非常重要,本文基于高斯消息传 递 (Gaussian message passing,GMP)提出了一种递推最小二乘(Least squares, LS)信道估计 算法。借助于因子图,根据广义分配率思想,将估计函数分为多个局部函数,每个局部函数 做多利处理,然后通过定义辅助变量使其成递推关系。根据turbo原理,迭代交换软信息, 使得估计、均衡及译码联合进行。在此基础上 ,分析并推导出无偏简化方法,然后借助于快速傅里叶变换,使得算法复杂度随观察向量长 度的增加呈对数上升。仿真表明该简化算法具有较好的信道估计性能和误码率特性的同时, 显著降低了计算量。     

一种新的低压电力线载波网络软件路由器设计

针对窄带电力线网络节点通信状态变化剧烈和通信成功率低的问题,提出了一种新的基于节点相关度的动态网络分簇软件路由器的设计方法。该路由器根据接收信号强度、历史抄通概率和网络连通度选取簇头节点,根据节点相关度确定簇内成员;当部分网络节点以现有路径不能正常通信时采取基于邻居节点数目的概率泛洪机制重构网络,可保证数据的即时传输。分析表明这种路由器具有灵活性、实用性和有效性。     

基于电力载波技术的智能化路灯控制系统

该设计综合采用了中心控制、信息传输、单片机控制、声控、实时监控等技术,自动控制路灯的工作状态,以达到节约能源的目的;采用电力载波技术即采用电力线作为传输总线,在总线上连接各远端指令接收器即路灯节点,控制各路灯的工作状态,从而大大节约了因铺设电缆所消耗的费用。     

Minimizing Energy Barrier in Intermediate Connection Layer for Monolithic Tandem WPeLEDs with Wide Color Gamut

Perovskite light-emitting diodes (PeLEDs) show promising prospects in the wide color gamut display owing to their ultra-narrow full width at half maximum (FWHM). However, up to now, all perovskite white LEDs integrated by standard red, green, and blue perovskite emitters, namely, monolithic white PeLEDs (WPeLEDs), have been rarely reported, owing to facing some issues, e.g., solvent incompatibility in solution technique, ion exchange, and energy transfer between different emission centers. Herein, centered on these issues, an optimal intermediate connection layer (ICL) of Po-T2T/LiF/Ag/HAT-CN/MoO₃ is adopted to successfully develop monolithic tandem multicolor PeLEDs and WPeLEDs for the first time. The multicolor PeLEDs can achieve the best external quantum efficiency of 1.8% and the highest luminance of 4844 cd m⁻². Besides, the red/green/blue (R/G/B) monolithic tandem WPeLED shows a standard white International Commission on Illumination coordinate of (0.33, 0.33) and achieves an extremely wide color gamut reaching  National Television Standards Committee of 130%. This study is the first to realize the standard R/G/B co-electroluminescence in a monolithic perovskite device and offers a feasible strategy for developing wide-color gamut perovskite displays.     

Electrical and Thermal Transport Properties of Ge1–xPbxCuySbyTeSe2y

Balancing the contradictory relationship between thermoelectric parameters, such as effective mass and carrier mobility, is a challenge to optimize thermoelectric performance. Herein, the exceptional thermoelectric performance is realized in GeTe through collaboratively optimizing the carrier and phonon transport via stepwise alloying Pb and CuSbSe₂. The formation energy of Ge vacancy is efficiently bolstered by alloying Pb, which reduces carrier density and carrier scattering to maintain superior carrier mobility in GeTe. Additionally, CuSbSe₂, acting as an n-type dopant, further modulates carrier density and validly equilibrates carrier mobility and effective mass. Accordingly, the promising power factor of 45 µW cm⁻¹ K⁻² is achieved at 723 K. Meanwhile, point defects are found to significantly suppress phonons transport to descend lattice thermal conductivity by Pb and CuSbSe₂ alloying, which barely impacts the carrier mobility. A combination with superior carrier mobility and lower lattice thermal conductivity, a maximum ZT of 2.2 is attained in Ge_0.925Pb_0.075Cu_0.005Sb_0.005TeSe_0.01, which corresponds to a 100% promotion compared with that of intrinsic GeTe. This study provides a new indicator for optimizing carrier and phonon transport properties by balancing interrelated thermoelectric parameters.     

材料饱和特性对永磁电机性能的影响研究

针对非晶材料饱和磁密低,非晶永磁电机性能易受铁心饱和作用影响的问题,本文提出了饱和磁密解析模型用以分析定子铁心齿部饱和作用产生的影响,该模型的特点是利用饱和前后气隙磁密的比率代替实验实测的电压比率求解出饱和系数,从而实现在电机初始设计阶段饱和效应对电机性能影响的分析与研究。基于该饱和磁路解析模型分析了定子铁心饱和对非晶永磁电机绕组电感、谐波电流以及逆变器供电情况下由载波引起的损耗的影响规律。     

一种基于Arnold置乱和DCT编码的无载体信息隐藏方法北大核心CSCD

近年来十分火热的搜索映射式无载体信息隐藏虽具有一定的鲁棒性,但其隐藏容量较低、传输负载大且算法复杂度高。针对以上问题,该文章提出一种基于Arnold置乱和离散余弦变换(discrete cosine transform,DCT)编码的无载体信息隐藏方法。该算法先对图片进行Arnold置乱,再对DCT后的低频系数进行编码,接着更换置乱参数来构建索引表。选择索引表中与秘密信息相同的编码值所对应的参数构建候选队列,最后筛选出鲁棒性强的参数作为密钥发送给接收方。实验结果表明,该方法与现有方法相比大大提高了嵌入容量,拥有更强的抗JPEG压缩性能。并且减少了传输负载,算法简捷,具有较强的应用价值。