Hexagonal ultrathin WO3 nano-ribbons (HUWNRs) of subnanometer thicknesses, 2–5 nm widths, and lengths of up to several micrometers were prepared by a solvothermal method. The as-prepared HUWNRs grow along the [001] direction, and the main exposed facet is the (120) crystal plane. The HUWNRs exhibit good electrochemical performance as an anode material in lithium ion batteries because of their unique structure. It is believed that these unique materials may be applied in many fields.
B sheets have been intently studied, and various candidates with vacancies have been reported in theoretical investigations, including their possible growth on metal surfaces. However, a recent experiment reported that the borophene formed on a Ag (111) surface consisted of a buckled triangular lattice without vacancies. Our calculations propose a novel nucleation mechanism of B clusters and emphasize the B–Ag interaction in the growth process of borophene, demonstrating the structural evolution of triangular fragments with various profiles and vacancy distributions. Compared with the triangular lattice without vacancies, we have confirmed that the sheet energetically favored during the nucleation and growth is that containing 1/6 vacancies in a stripe pattern, whose scanning tunneling microscopy image is in better agreement with the experimental observation.
The magnetotransport properties of spin valve structure are highly influenced by the type of intervening layer inserted between the ferromagnetic electrodes. In this scenario, spin filtering effect at the interfaces plays a crucial role in determining the magnetoresistance (MR) of such magnetic structures, which can be enhanced by using a suitable intervening layer. Here, the authors investigate the spin filtering effect of the two‐dimensional layers such as hexagonal boron nitride (hBN), graphene (Gr), and Gr‐hBN hybrid system for modifying the magnetotransport characteristics of the vertical spin valve architectures (Ni/hBN/Ni, Ni/Gr/Ni, and Ni/Gr‐hBN/Ni). Compared to graphene, hBN incorporated magnetic junction reveals higher MR and spin polarizations (P) suggesting better spin filtering at the interfaces. The MR for hBN incorporated junction is calculated to be ≈0.83%, while that of graphene junction it is estimated to be ≈0.16%. Similar contrast is observed in the ‘P’ of ferromagnets (FMs) for the two junctions, that is, ≈6.4% for hBN based magnetic junction and ≈2.8% for graphene device. However, for Gr‐hBN device, the signal not only get inverts, but it also suggests efficient spin filtering mechanism at the FM interfaces. Their results can be useful to comprehend the origin of spin filtering and the choice of non‐magnetic spacer for magnetotransport characteristics. 相似文献