Growth and Characterization of Crystal Nd_(0.06)Y_(0.94)Sr_6Sc(BO_3)_6

<正>The crystal of Nd0.06Y0.94Sr6Sc(BO3)6 with the dimensions up to 35 mm × 28 mm × 13 mm was grown by a top-seeded solution growth method from Li6B4O9 flux. The grown crystal was characterized by X-ray powder diffraction. The optical absorption of the crystal shows that it has a strong absorption band at 8070 A, and the absorption coefficient is 2.17cm-1 with a FWHM of 41 A, which can match with the wavelength of the diode-laser (LD) and is suitable for the LD pumping. Based on the Judd-Ofelt theory, the three parameters of line oscillator strength Ω(λ) (λ = 2, 4 and 6) of the Nd3+ion in the crystal were calculated as follows: Ω2= 1.194 × 10-20, Ω4= 4.186 × 10-20 and Ω6 = 3.351 × 10-20cm2, which are relatively larger. The results indicate that the crystal Nd0.06Y0.94Sr6Sc(BO3)6 may be a kind of high-efficient laser material for diode-pumped.     

Au/CeO2/Y和Au-MFe2O4催化剂用于有氧条件下CH4还原NOx的研究

以CeO2／Y分子筛和MFe2O4(M=Ni,Co，Zn)为载体，制备Au／CeO2／Y和Au-MFe2O4负载型金催化剂．用CH4做还原剂，考察了它们在有氧条件下催化还原NOχ的活性．结果表明：在Au-Y中引人助剂Ce，使得Au／CeO2／Y的催化活性高于Au／Y；Au-CoFe2O4的催化活性高于Au-Fe2O3，反应温度为300℃时，NOχ在Au-CoFe2O4上的转化率达到39．70%．     

钇对金属陶瓷力学性能和组织的影响

研究了添加钇对Ｔｉ（Ｃ，Ｎ）基金属瓷力学性能和组织的影响。结果表明，加入适量的钇能提高Ｔｉ（Ｃ，Ｎ）基金属陶瓷的抗变强度和硬度，其原因是由于钇与杂质硫起反应在化合物，净化了陶瓷相－金属相，陶瓷相－陶瓷相界面提高子界面结合强度     

Li—Ni—La—O系复合氧化物催化剂上甲烷氧化偶联的研究

考察了Ｌｉ－Ｎｉ－Ｌａ－Ｏ系催化剂的组成、结构及反应条件对甲烷氧化偶联反应活性的影响。在７８０℃、ＣＨ４：Ｏ２：Ｎ２＝２：１：７、空速１５０００ｈ＾－１时，Ｃ２烃收率可达２５．８％。ＸＲＤ、ＩＲ、ＸＰＳ及ＳＥＭ等的结构分析表明，在ＬｉＬａ１－ｘＮｉｘＯ２催化剂中，当０．１≤ｘ≤０．９时，该催化剂由ＬｉＮｉＯ２和Ｌａ２Ｎｉ１－ｙＬｉｙＯ４－λ两相组成，ｘ＜０．３时出现了ＬｉＬａＯ２相，Ｌａ２Ｎｉ１－     

Structural and Optical Properties of Sol-Gel Derived Aluminosilicate Planar Waveguides Doped with Er3+ Ions

Er3+ doped-aluminosilicate thin films were prepared on silica and silica/Si substrates by the sol-gel process and dip-coating. The sol-gel aluminosilicate planar waveguides were prepared from silicon and aluminium alkoxides. Their structural characterization has been carried out by Raman spectroscopy, Atomic Force and Scanning Electron Microscopies. The results indicated that these films present an amorphous structure until an annealing temperature of 900°C, while at temperatures higher than 1000°C, crystallization occurs. An estimate of microcrystallite sizes using Raman spectroscopy is given, which agrees with data from scanning electron microscopy. The optical properties have been investigated by Fluorescence spectroscopy in the visible region.     

手性液晶掺杂剂（S）—4‘—辛氧基—4—（2—酰氧基—丙氧基）联苯的合成

手性液晶掺杂剂（Ｓ）┐４┐辛氧基┐４┐（２┐酰氧基┐丙氧基）联苯的合成马汝建李培荣国斌＊（华东理工大学化学系上海２００２３７）关键词铁电液晶材料，手性液晶掺杂剂，合成，手征性１９９７－０２－０３收稿，１９９７－０８－０７修回铁电液晶显示器所用的材料...     

N-TiO2/ZnO复合纳米管阵列的掺杂机理及其光催化活性

以ZnO纳米柱阵列为模板, 采用溶胶-凝胶法制备出TiO2/ZnO和N掺杂TiO2/ZnO的复合纳米管阵列. 扫描电镜(SEM)、X射线光电子能谱(XPS)和紫外-可见漫反射吸收光谱(UV-Vis)的结果表明: 两种阵列的纳米管均为六角形结构, 直径约为100 nm, 壁厚约为20 nm; 在N-TiO2/ZnO复合纳米管阵列中, 掺入的N离子主要是以N-Ox、N-C和N-N的形式化学吸附在纳米管表面, 仅有少量的N离子以取代式掺杂的方式占据TiO2晶格O的位置; 表面N物种形成的表面态能级和取代式掺杂导致带隙的窄化, 增强了纳米管阵列的光吸收效率, 促进了光生载流子的分离. 光催化实验结果表明, N离子的掺杂有利于N-TiO2/ZnO复合纳米管阵列光催化活性的提高.     

Pt掺杂对Mo-Ru-Se簇合物电催化氧还原性能的影响

直接甲醇燃料电池(DMFC)是理想的移动电源,但因金属Pt阴极催化剂的选择性较差,甲醇在阴极产生“混合电位”,导致电池效率降低。抗甲醇氧电还原催化剂可降低“混合电位”,是解决该问题的有效的方法。     

Preparation and lithium doping of gallium oxynitride by ammonia nitridation via a citrate precursor route

Gallium oxynitride, isostructural to hexagonal gallium nitride (h-GaN), was obtained by ammonia nitridation of a precursor prepared from the addition of citric acid to an aqueous solution of gallium nitrate. Gallium oxynitride produced at 750 °C had a small amount of gallium vacancies, and was formulated as (Ga_0.89□_0.11) (N_0.66O_0.34) where the symbol □ stands for gallium vacancy. Both the gallium vacancies and oxygen substituted for nitrogen were randomly distributed within the structure. The amount of vacancies decreased with nitridation temperatures in the range of 750-850 °C. Approximately, 10 at% Li⁺ was doped into the gallium oxynitride, using a similar preparation with the additional presence of lithium nitrate, resulted in the random substitution of Ga³⁺ in an atomic ratio of Li/Ga<1 at 750 °C. Oxygen was codoped with lithium and substituted nitrogen in the wurtzite-type crystal lattice. These substitutions reduced the electrical conductivity in the gallium oxynitride semiconductor. A new oxynitride, Li₂Ga₃NO₄, was also obtained with Li₂CN₂ impurity using similar preparations from a mixture of Li/Ga?1. The crystal structure was isostructural with h-GaN, and was refined as P6₃mc with a=0.31674(1) nm, and c=0.50854(2) nm. The Ga and Li occupancies at the 2b site were refined to be 0.6085 and 0.3915, respectively, assuming that the other 2b site was randomly occupied with 1/5O and 4/5N. When the new compound was washed for over 1 min for the removal of Li₂CN₂ impurities, it was decomposed to a mixture of α-GaOOH and α-LiGaO₂. The as-prepared product with Li/Ga=1 showed the highest intensity in yellow luminescence among the products under excitation at 254 nm.     

Preparation of Y2Ba4Cu7O15-δ Superconductor without High Oxygen Pressure

The synthesis of bulk Y₂Ba₄Cu₇O_15-δ superconductor at atmospheric oxygen pressure via solid state sintering is reported. Temperature ranging from 860 to 890 °C as well as time interval over 2 to 15 days were used to investigate the formation of the Y₂Ba₄Cu₇O_15-δ phase. A time-temperature profile characterizing the conditions for the preparation of Y₂Ba₄Cu₇O_15-δ phase suggests the optimal condition to be sintering at 890 °C for over 10 days. Detailed results of X-ray diffraction, electrical resistivity, iodometric titration and magnetization measurements are described.