铁电材料的纳米尺度压电响应力显微术研究进展

压电响应力显微术是在原子力显微镜的基础上,利用材料自身逆压电效应来探测样 品表面形变的一类技术总称.现已作为铁电材料研究的重要手段,应用于纳米尺度畴结构的三 维成像、畴结构的动态研究、畴结构控制和微区压电、铁电、漏电等物理性能表征等领域.本 文就近年来利用压电响应力显微术对铁电材料的研究方面作一综述.     

Pb(Zn1/3Nb2/3)O3基陶瓷预合成和烧结工艺的研究

基于Swartz and Shrout的二次合成法,采用改进的两步法,将部分原料预合成,一次烧结合成具有100%钙钛矿结构的75Pb(Zn1/3Nb2/3)O3-10PbTiO3-15BaTiO3固溶体陶瓷.首先一次性称量PbO,然后和ZnNb2O6混合,在660～800℃预合成,将预合成产物粉碎后再与TiO2和BaCO3按化学计量称量,充分混合后,在1060～1140℃保温1～2h烧结成陶瓷试样.实验结果表明:改进的两步法工艺能够将预合成温度降为660℃,烧结温度能被拓宽到80℃获得100%钙钛矿结构的固溶体陶瓷.不同于传统的预合成和烧结,改进的两步法工艺简单、有效,在预合成阶段没有形成钙钛矿相,烧结阶段陶瓷的成瓷和致密化同时进行,完成了中间相向钙钛矿相的转变,获得了介电性能优良的陶瓷试样.     

电泳沉积技术制备铁电陶瓷薄膜的研究进展

综述了电泳沉积技术在制备铁电陶瓷薄膜方面的最新研究进展,讨论了陶瓷特性、电压、分散剂、热处理时间等因素对电泳沉积铁电薄膜性能的影响.最后展望了电泳沉积技术制备铁电陶瓷薄膜的进一步发展.     

改性偏铌酸铅高温压电陶瓷材料的研究

偏铌酸铅是一种性能很有特色却又制备困难的高温压电陶瓷材料，而采用少量Ｍｅ＾２＋置换和微量稀有元素氧化物添杂方法，获得了压电性能和工艺性能均十分优良的改性偏铌酸铅高温压电陶瓷材料，并以热力学熵稳定原理，定性地解释了少量置换与微量添杂对稳定铁电相的作用，同时也对这种压电陶瓷材料的高温压电特性和高温下的应用进行了研究与试验，结果表明，这种材料是一种可以在４００℃下应用的高温压电陶瓷材料。     

NBT-KBT-BT系弛豫铁电体的弥散相变研究

采用传统压电陶瓷固相合成法制得纯钙钛矿相的(1.002-5x)NBT-4xKBT-(x-0.002)BT(x=0.026,0.028,0.030,0.032,0.034)(简写为BNBKT100x)系弛豫铁电体。通过X-射线衍射(XRD)分析,当x=0.030时为三方、四方两相共存,为该体系的准同型相界。系列样品的介电温谱显示在室温到500℃之间存在两个介电反常峰,分别对应于陶瓷材料的铁电-反铁电-顺电相变。同时发现该系列样品显示出弛豫铁电体特性。并用成分起伏理论解释了这种弛豫弥散相变。     

退火温度对Sol-gel法制备的BiFeO3薄膜结构及电性能的影响

采用溶胶-凝胶法在ITO/glass衬底上制备了BiFeO3薄膜,退火温度分别为500℃和550℃.实验结果表明,550℃退火的薄膜晶粒较大且不均匀,并有杂相产生,薄膜的漏电流较大,没有得到饱和的电滞回线;而在500℃退火的薄膜晶粒较小且均匀,没有杂相产生,相对于550℃退火的薄膜,其漏电流密度降低了约2个数量级,铁电性得到明显增强,剩余极化强度约为40μC/cm2,矫顽场约为75kV/cm,最大的测试电场为130kV/cm.     

溶胶－凝胶法制备Pb（Zr，Ti）O_3玻璃陶瓷过程中的结构变化

本文介绍溶胶－凝胶法制备均匀ＰｂＺｒ－Ｔｉ－Ｂ－Ｓｉ凝胶玻璃，并通过适当热处理在凝胶玻璃中原位生长Ｐｂ（Ｚｒ；Ｔｉ）Ｏ３微晶的新工艺·利用ＩＲ谱考察了凝胶玻璃中的元素键合结构随温度的变化．结合热分析和ＸＲＤ；ＳＥＭ技术，研究了Ｐｂ（Ｚｒ，Ｔｉ）Ｏ３微晶在凝胶玻璃中的生长过程及该材料的结构特点．发现Ｐｂ２（Ｚｒ，Ｔｉ）２Ｏ６＋ｘ立方焦绿石介稳过渡相的纳米微晶首先出现于该体系中，并在更高的温度下先后完全转变成三方和四方Ｐｂ（Ｚｒ，Ｔｉ）Ｏ３钙钛矿相．电子显微观察结果表明，该工艺制备的Ｐｈ（Ｚｒ；Ｔｉ）Ｏ３玻璃陶瓷具有均匀的细晶结构．     

超薄铁电膜的居里温度及表面效应

采用平均场理论下的横场Ising模型,得到同时考虑Ω≠Ω,J≠J情况下超薄铁电膜的居里温度表达式．利用所得出的居里温度表达式,分别计算了不同层数超薄铁电膜的居里温度与表面赝自旋相互作用和表面隧穿频率的关系,通过分析,得到一些新的由居里温度反映的表面效应信息．     

High permittivity (1−x)Bi1/2Na1/2TiO3‐xPbMg1/3Nb2/3O3 ceramics for high‐temperature‐stable capacitors

(1?x)Bi_1/2Na_1/2TiO₃‐xPbMg_1/3Nb_2/3O₃[(1?x)BNT‐xPMN] ceramics have been fabricated via a conventional solid‐state method for compositions x ≤ 0.3. The microstructure, phase structure, ferroelectric, and dielectric properties of ceramics were systematically studied as high‐temperature capacitor materials. XRD pattern certified perovskite phase with no secondary phase in all compositions. As PMN concentration increased, the phase of (1?x)BNT‐xPMN ceramics transformed from ferroelectric to relaxor gradually at room temperature, with prominent enhancement of dielectric temperature stability. For the composition x = 0.2, the temperature coefficient of capacitance (TCC) was <15% in a wide temperature range from 56 to 350°C with high relative permittivity (>3300) and low dielectric loss (<0.02) at 150°C, which indicated promising future for (1?x)BNT‐xPMN system as high‐temperature stable capacitor materials.     

Enhanced shock performance by disperse porous structure:A case study in PZT95/5 ferroelectric ceramics

The porosity and corresponding microstructural features ultimately determine the properties of the macroporous materials. In this work, porous PZT95/5 ferroelectric ceramics having a common bulk density but with disperse and agglomerated pore distribution were prepared to study their influence on the physical properties. It is experimentally demonstrated that pore distribution exhibits significant influence on the shock compression response behaviors. Porous PZT95/5 ferroelectric ceramics with disperse pores exhibit enhanced shock resistance and thus higher breakdown strengths than its counterparts with agglomerated voids. To explain the underlying physical mechanism, a lattice‐spring model was employed to simulate both macroscopic shock response and mesoscopic evolution of the microstructures under shock compression. Our simulation results are concordant with our experimental observations. The enhanced shock resistance and larger shock plasticity of porous PZT95/5 ferroelectric ceramics with disperse pores under shock compression was found to be responsible for the superior performance.