Ferroelectric properties of Bi_4Zr_(0.5)Ti_(2.5)O_(12) thin films prepared on LaNiO_3 bottom electrode by sol-gel method

The Bi4Zr0.5Ti2.5O12 (BZT) thin films were fabricated on the LaNiO3 bottom electrode using sol-gel method. The structure and morphology of the films were character-ized using X-ray diffraction, AFM and SEM. The results show that the films have a perovskite phase and dense microstructure. The 2Pr and 2Vc of the Pt/BZT/LaNiO3 capacitor are 28.2 μC/cm2 and 14.7 V respectively at an applied voltage of 25 V. After the switching of 1×1010 cycles, the Pr value decreases to 87% of its pre-fatigue val-ues. The dielectric constant (ε) and the dissipation factor (tanδ) of the BZT thin films are about 204 and 0.029 at 1 kHz, respectively. The films show good insulating behavior according to the test of leakage current. The clockwise C-V hysteresis curve observed shows that the Pt/BZT/LaNiO3 structure has a memory effect be-cause of the BZT film’s ferroelectric polarization.     

NBT-KBT-BT系弛豫铁电体的弥散相变研究

采用传统压电陶瓷固相合成法制得纯钙钛矿相的(1.002-5x)NBT-4xKBT-(x-0.002)BT(x=0.026,0.028,0.030,0.032,0.034)(简写为BNBKT100x)系弛豫铁电体。通过X-射线衍射(XRD)分析,当x=0.030时为三方、四方两相共存,为该体系的准同型相界。系列样品的介电温谱显示在室温到500℃之间存在两个介电反常峰,分别对应于陶瓷材料的铁电-反铁电-顺电相变。同时发现该系列样品显示出弛豫铁电体特性。并用成分起伏理论解释了这种弛豫弥散相变。     

Tailored liquid‐crystal switching on ferroelectric polymer films

Abstract— The development of voltage‐controlled visible‐wavelength progression in displays and optical data storage devices using ferroelectric polymers and liquid crystals is described. Ferroelectric polymers are materials that have a ready distribution of dipoles which can be oriented by manipulating material composition and external fields. Utilizing the charge polarization distribution, their performance as an alignment layer for inducing liquid‐crystal alignment is presented. The switching response of the devices was tailored by changing the material composition through copolymers and nanoclay doping.     

MgO掺杂Ba0.6Sr0.4TiO3铁电材料的结构研究

采用固相反应法制备了掺杂不同量氧化镁（MgO）的钛酸锶钡（BST）微波铁电材料。采用SEM、EPMA、XRD等测试手段，分析研究了烧结产物的微观形貌特征、相组成、微区成分等特点，结果表明：MgO总是以单独相存在，Mg^2＋没有取代Ba^2＋（Sr^2＋）或Ti^4＋离子而进入BST晶格。     

铁电薄膜钛酸铋掺杂改善铁电性及疲劳特性的研究

分析了对铁电薄膜Bi4Ti3O12进行A位、B位掺杂时，Bi4Ti3O12铁电性及疲劳特性的改善及相应的理论解释，并指出Bi4Ti3O12值得进一步深入研究的领域。     

Sol-gel synthesis and characterisation of (Nd,Cr) co-doped BiFeO3 nanoparticles

Bi_0.95Nd_0.05Fe_1–xCr_xO₃ (x = 0, 0.01, 0.03, 0.05) samples are synthesised by the sol-gel method. The variation in structure, magnetisation, electrical and photocatalytic properties by Cr doping at Fe site in Bi_0.95Nd_0.05FeO₃ samples is analysed. X-ray diffraction pattern confirms the formation of rhombohedral structure in all the samples. The crystallite size is calculated using the Scherrer relation and found to be in nanometre range. Kubelka-Munk theory is used to determine the direct band gap of the samples from reflectance spectra. The saturation magnetisation is found to enhance the concentration of chromium. Arrott-Belov-Kouvel plot confirms the ferromagnetic nature in the samples. The leakage mechanisms are studied to understand the influence of Cr concentration on the BFO. A good correlation exists between the leakage current and ferroelectric behaviour. Photocatalytic tests show degradation of methylene blue dye in the presence of H₂O₂. A drastic decrease in photocatalytic activity is observed with the concentration of Cr.     

Defect‐Mediated Polarization Switching in Ferroelectrics and Related Materials: From Mesoscopic Mechanisms to Atomistic Control

The plethora of lattice and electronic behaviors in ferroelectric and multiferroic materials and heterostructures opens vistas into novel physical phenomena including magnetoelectric coupling and ferroelectric tunneling. The development of new classes of electronic, energy‐storage, and information‐technology devices depends critically on understanding and controlling field‐induced polarization switching. Polarization reversal is controlled by defects that determine activation energy, critical switching bias, and the selection between thermodynamically equivalent polarization states in multiaxial ferroelectrics. Understanding and controlling defect functionality in ferroelectric materials is as critical to the future of oxide electronics and solid‐state electrochemistry as defects in semiconductors are for semiconductor electronics. Here, recent advances in understanding the defect‐mediated switching mechanisms, enabled by recent advances in electron and scanning probe microscopy, are discussed. The synergy between local probes and structural methods offers a pathway to decipher deterministic polarization switching mechanisms on the level of a single atomically defined defect.     

Effects of poling state and pores on fracture toughness of Pb(Zr0·95Ti0·05)O3 ferroelectric ceramics

Abstract

Abstract

The effects of poling state and pores on the fracture toughness of Pb(Zr_0·95Ti_0·05)O₃ (PZT 95/5) ferroelectric ceramics were investigated. X-ray diffraction analysis and piezoelectric constant measurements reveal that the phase structures of PZT 95/5 ceramics change with the poling state, which significantly affects the fracture toughness. The poled PZT 95/5 ceramics demonstrate higher fracture toughness than the unpoled ceramics, and their fracture toughness significantly increases after the pressure depoling. As the porosity of ceramics increases with addition of poreformer during preparation, their fracture toughnesses all decrease accordingly either in poled state or unpoled state. The effect of pore size on the fracture toughness is subtle for the poled ceramics, but for the hydrostatic pressure depoled porous PZT 95/5 ceramics, their fracture toughness increases with the increase in pore size. A new stress model is proposed to explain the pore size effect on the fracture toughness of hydrostatic pressure depoled PZT 95/5 ceramics.     

Parameter extraction of interdigital slow‐wave coplanar waveguide circuits using finite difference frequency domain algorithm

The slow wave effect can be obtained by a capacitively loaded structure with a symmetrical interdigital line connected on both sides of the coplanar waveguide (CPW) central line. The ferroelectric thin film with high dielectric constant can reduce the size of circuit and make it possible to realize tunable devices such as filter by applying voltage on it. Actually, this kind of slow wave structure is a periodic guided‐wave structure and can be analyzed by using classic finite difference frequency domain (FDFD) method for periodic guided‐wave structures. However, the very compact slow‐wave structures will usually result in simulation errors when the classic FDFD method is adopted, which will lead to a nonsymmetrical generalized eigenvalue problem. In this article, the shift‐and‐invert (SI) Arnoldi method is used to directly resolve this nonsymmetrical generalized eigenvalue problem. As a result, the accuracy of FDFD algorithm is improved. Especially for the large scale eigenvalue problem, SI method can also have a very fast speed of calculation. By means of its complex propagation constant obtained from simulation, one can extract circuit parameters of the interdigital capacitor. Consequently, one can analyze and design relevant resonators and filters in a quick and accurate manner, which are constructed with such interdigital slow wave structures. © 2008 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2008.