高坝洲电站碾压混凝土纵向围堰拆除爆破设计与实践

介绍了高坝洲电站碾压混凝土下游纵向围堰现场爆破试验成果,在分析爆破试验效果的基础上进行碾压混凝土围堰拆除爆破设计,详细分析了拆除爆破实施效果及主要影响因素.     

The aligned Si nanowires growth using MW plasma enhanced CVD

New and simple modification of vapor-liquid-solid process for Si nanowires growth based on microwave plasma enhanced chemical vapor deposition that uses solid-state Si target as a source of Si atoms was developed. The method was temperature and pressure controlled evaporation of solid phase of Si source in hydrogen microwave plasma. Aligned growth of Si nanowires was performed in local electric field by applying of constant negative bias to substrate holder. Deposited Si nanowires were studied by scanning electron microscopy (SEM), Raman and photoluminescence spectroscopy. Correlation between photoluminescence spectra and Si nanowires properties were studied.     

Powder Deposition in Three Parallel-Oriented Dies of Different Shapes

Uniformity of bulk density distribution during the die filling process is required to minimize quality problems, such as distortion and cracking, for powder compacts. Understanding the die filling process is necessary in ensuring a uniform powder deposition. The second-generation pressure deposition tester (PDT-II) was used to investigate the deposition process and final pressure distribution of powder filling in toroidal, cylindrical, and E-shaped dies. All tests were conducted using a spray-dried free-flowing granular powder. The results indicated that for toroidal dies: (1) the area around 0° orientation (the leeward end) had the highest pressure values (1186.7 to 2498.0 Pa), with the average pressure values of the remaining area 353.7-648.0 Pa; (2) the pressure distribution was symmetrical about the centerline parallel to the feed shoe movement direction; (3) the highest feed shoe speed (500 mm/s) led to the most nonuniform pressure distribution among the three speeds; (4) higher feed shoe speed did not always result in higher final pressure values; and (5) the right die tended to have higher final pressure values (215.0 to 2498.0 Pa) than the center die (95.4 to 2052.5 Pa). For E-shaped dies: (1) the final pressure values of the middle leg (308.9 to 760.7 Pa) were higher than those of the left and the right legs (148.9 to 530.3 Pa); (2) the area along the backside had the highest final pressure value (1054.6 to 1303.8 Pa); (3) the pressure distribution was symmetrical about the centerline parallel to the feed shoe movement direction; and (4) neither the center die nor the right die always had higher pressure values than the other one at all locations. Comparison between cylindrical and toroidal dies indicated that: (1) neither of the two die shapes (cylinder and toroid) led to consistently higher or lower final pressure values at all locations and (2) for all three feed shoe speeds, the toroidal die had higher average final pressure values in the 0° orientation.     

The process window for diamond deposition from the vapor phase with sulfur in the C–H–O feed gas mixtures

Theoretical predictions using a modified radical species ternary diagram for C–H–O system indicate that addition of sulfur expands the C–H–O gas phase compositional window for diamond deposition. Sulfur addition to no-growth domain increases the carbon super-saturation by binding the oxygen and the addition of sulfur to the non-diamond domain reduces the heavy carbon super-saturation by decreasing C_nH_m species concentration in the gas phase. The overall effect of sulfur addition to gas phase mixtures is characterized as that of oxygen addition to the C–H system, i.e. expansion of the compositional window over which diamond can be deposited from the gas phase. In addition, the increasing sulfur concentration to diamond domain feed gases beyond 2000 ppm did not affect the steady state gas phase composition but the quality of diamond was reduced.     

Non-steady-state model for kinetics of free radical polymerization, 4. Direct thermal initiation

This paper deals with the non-steady-state kinetics of direct thermal initiated polymerization. The initiation is assumed to be a bimolecular reaction of the monomer. The relationship between the radical concentration and the monomer conversion is rigorously derived. In further treatment a few very close approximations are introduced based on the fact that the number of monomer molecules reacting in the initiation step is much less than that consumed in the propagation step for a process producing high polymer, and the value of the rate constant for propagation or chain transfer is much lower than that for chain termination. Expressions for various molecular parameters, such as molecular weight distribution, number-average and weight-average degrees of polymerization, and dispersity, are given. Several numerical examples are provided.     

金刚石薄膜中晶粒尺寸的研究

扫描电子显微研究表明，化学汽相沉积的金刚石薄膜中晶粒大小比较均匀。但随着沉积时间和薄膜厚度的增加，晶粒逐渐变大，且每一层内，存在少量的大金刚石颗粒，讨论了晶粒尺寸变化和大晶粒形成的原因和机制。     

旋波媒质基本参数的一种测试方法

本文提出了直接利用旋波材料板的Ｓ参数获得其基本参数的方法。通过自由空间测量旋波材料板的反射场和透射场，可以反演得到媒质的复介电常数、复磁导率、旋波量以及透射场的轴比和旋转角，测试程序简单，结果精度高。     

Hydride Vapor Phase Epitaxy of GaN Thick Films by the Consecutive Deposition Process Using GaCl3

GaN buffer and main layers were grown by the conventional hydride vapor phase epitaxy technique using GaCl₃ consecutively. The deposited buffer layers were investigated by atomic force microscopy and X-ray analysis. To examine the behavior of the buffer layers at main layer growth temperature, heat treatment was conducted at 900°C. Based on the results of the buffer layer study, GaN thick films were grown at 1050°C. Optimum deposition conditions of buffer layer from the buffer and main layer studies generally coincided. On the φ scanning pattern, the GaN films grown on (0001) Al₂O₃ were single-crystalline. Band-edge emission dominated photoluminescence was observed at room temperature.     

Silver Electrodeposition from Photographic Processing Solutions

This paper describes the parameters that are important in the industrial practice of silver removal from photographic fixers. The experiments were performed under potentiostatic control using synthetic solutions. The current efficiency was analysed as a function of the cathodic potential taking into account the deposit quality. A cathodic potential of ?0.5 V against a saturated calomel electrode is recommended. The conditions to prevent the darkening of the electrodeposit were investigated. The determination of silver concentration in the solution was made by direct potentiometry. The results obtained with synthetic fixers were corroborated by making the silver deposition from commercial fixers in an electrochemical reactor with rotating cylinder electrode intercalated in an electrolytic flow circuit in order to simulate practical conditions.